HW 6 (Due 11/02)
1. A MOS capacitor with a 10 nm SiO2 gate oxide on p-Si with Na = 10 16 cm-3. The gate is n+ polySi,
and the oxide has a fixed oxide charge of 5x10 10q (C/cm2). Find VT.
2. List and briefly discuss different adverse effects of the short c
EE 5/4314 HW 1
(For you to practise)
1. Explain the difference of Diamond, Zincblend and Wurtize crystal structures.
2. Calculate the densities of Si and GaAs based on their lattice constants (you find them) and
HW 5 (Due on 10/26)
P1. (Referring to section 6.4.2) Understanding how the surface charge Q s is
formed in an ideal MOS capacitor. Assuming p-Si with p 0, and flat-band at
Vg = 0. We call the top surface (interface to oxide) of Si as surface.
Based on the
HW4: ( Due on 10/09)
6th edition: Chapter 5: P8, 9, 11, 12, 16,18,19,21, 23, 26
7th edition: chapter 5: P13,14,16,17,21,23,24,26,28,31
Following are for you to prepare for Test. Do not submit them.
Chapter 5: Q1, Q3, Q4, Q5
In a semiconductor, at th