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MID-SEMESTER EXAM
ECE 6347 Advanced Topics in MOS Devices
Spring 201 l
o The problems will be weighted as indicated. Be sure to spend at least some time on each
problem. The exam is open notes.
0 Please provide proper units
1/4
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Advanced MQ'S Devices
Homework #6
Due Monday, May 2
1. Full Scaling and Subthreshold Current .
Use the approximation to the Generalized I-V Model valid in the subthreshold region (see
Section 6.5 in the notes) to plot the drain current (actually the
ELEE 6347 Advanced MOS Devices
Spring 2011
The use of metal-oxide-semiconductor (MOS) devices in integrated circuit fabrication has been
growing at an enormous rate since the implementation of this technology in the early 1960's.
Silicon-based MOS is pres
K
Advanced MOS Devices
Homework #5
Due Wednesday, April 13
1. Transcondactance in Saturation Find an expression for the transconductance in saturation
gmsat of a MOSFET, as predicted by the Square Law Model and by the Bulk Charge Model. For
each case, ma
Advanced MOS Devices
Homework #5
Due Wednesday, April 13
1. Transconductance in Saturation Find an expression for the transconductance in saturation
gmsat of a MOSFET, as predicted by the Square Law Model and by the Bulk Charge Model. For
each case, make
HOT CARRIERS AND RELIABILITY IN MOS DEVICES
The term hot carriers refers to electrons or holes in the substrate of a MOS device that have
energies significantly above average. Hot carriers may be present due to a variety of
circumstances. When they are pr
Advanced MOS Devices
Homework #1
1. Basics
Silicon is doped with phosphorous donors to a concentration of 1016 cm3. In answering
these questions, refer to Pierret Fig. 35, which was inciuded in the PowerPoint
presentation accompanying Chapter 1: Review of
8
ULTRA-SMALL MOS: PERFORMANCE, FABRICATION, AND
MATERIALS ISSUES
In this section we review some MOSFET physics, materials and device technologies with a view
toward ultra-small devices. We will look at materials technologies including ultra-thin oxides
a
Advanced MOS Devices
Homework #2
Diode Current Components Calculate and plot the minority and majority carrier current
components on both sides of a pn junction diode with the following parameters, and Va = 0.5 V.
Use the ideal diode approximation develop
Advanced MOS Devices
Homework #2
Diode Current Components Calculate and plot the minority and majority carrier current
components on both sides of a pn junction diode with the following parameters, and Val = 0.5 V.
Use the ideal diode approximation develo
Advanced MOS Devices
Homework #3
Due Wednesday, March 2
MOS Capacitor Basics: Depletion Charge Estimate Assume that the depletion region below the
gate in a MOSFET is rectangular in cross section and does not extend beyond the gate area (in
reality this i
MOS Capacitor: Low Frequency CV Calculation
Reference:C:\L?Trombetta\MathCadRef\Constants.mcd
Reference:C:\LPTrombetta\MathCadRef\MOSSupplementarymcd
We need to specify doping density, oxide thickness. and temperature. The references above
contain univers
Advanced MOS Devices
Homework #4
Due Wednesday, March 30
Inversion and Bulk Charge
The total charge (per unit area) in the semiconductor of a MOSC is given by Qs = - Si s, where
s is the electric field evaluated at the surface. The charge in the inversion
10 CMOS and SEMICONDUCTOR MEMORY
10.1 COMPLEMENTARY MOS (CMOS)
Reference Chang and Sze, ULSI Technology, Section 9.3; Pierret, Modular Series on Solid
State Devices: Advanced MOS Devices.
Idea Power dissipation can be substantially reduced (and therefore
Advanced MOS Devices
Homework #4
Dire Wednesday, March 30
Inversion and Bulk Charge
The total charge (per unit area) in the semiconductor of a MOSC is given by Q5 = uni-Es, where
E, is the electric field evaluated at the surface. The charge in the inversi
Advanced MOS Devices
Homework #6
Due Monday, May 2
1. Full Scaling and Subthreshold Current
Use the approximation to the Generalized I-V Model valid in the subthreshold region (see
Section 6.5 in the notes) to plot the drain current (actually the subthres
Advanced MOS Devices
Chapter 5: Charge-Coupled Devices
Cullen College of Engineering
Department of Electrical and Computer Engineering
Dr. Len Trombetta
Spring 2011
Bucket Brigade Device
We inject charge by
forward-biasing a diode;
this is the signal.
Ide
Advanced Mos Devices I
Homework #3 _
Due Wednesday, March 2
MOS Capacitor Basics: Depletion Charge Estimate Assume that the depletion region below the
gate in a MOSFET is rectangular in cross section and does not extend beyond the gate area (in
reality t