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EE/CE 3320 Homework Assignment 5 - due Tuesday, October 4, 2016
1. Perform both SOP and POS optimization for F(a,b,c,d) = a'bc' + abc'd' + abd using a K-map. Compare
your results by estimating the number of transistors required for each solution.
2. Perfo

Homework Assignment 1
1.7 Suppose your are building a keypad that has the buttons A through G. A three-bit output
should indicate which button is currently being pressed. 000 represents no button being
pressed. Decide on a 3-bit encoding to represent each

University of Texas at Dallas
CE-EE-3310-HW2 Solution
Dr. Pourkamali
1. a)
In pure silicon = , so: = = = 1.5 10
= = + = 1.6 10 1.5 10 1400 + 500 = 4.56 .
= 2.19 10! .
1. b)
= = = 2 10! = 0.608. = 1.64 .
1. c)
According to figure 3.23 of the bo

Home Work 2
Electronic Devices-CE/EE 3310
Due Thursday, September 22nd, 2016
120 Points total (20 bonus points)
1. (90 points total)
a) Knowing that ni for silicon at 300K is 1.51010/cm3 calculate the resistivity of pure
silicon at 300K. (n and p in pure

Home Work 1
Electronic Devices-CE/EE 3310
Due Thursday, September 15th, 2016
110 Points total (10 distributed bonus points)
1. (55 points total)
a) Knowing that ni for silicon at 300K is 1.51010, what is the number of intrinsic
carriers (ni) in silicon if

Home Work 4
Electronic Devices-CE/EE 3310
Due Tuesday, October 18th, 2016
110 Points total (10 bonus points)
1. Problem 4.5 from the text book. 30 points
2. Problem 4.6 from the text book. 20 points
3. Problem 4.10 from the text book. 20 points
4. Problem

Home Work 5
Electronic Devices-CE/EE 3310
Due Thursday, November 3rd, 2016
110 Points total (10 bonus points)
1. Problem 5.7 from the text book. 30 points
2. Problem 5.9 from the text book. 30 points
3. Problem 5.10 from the text book. 30 points
4. Proble

Home Work 3
Electronic Devices-CE/EE 3310
Due Tuesday, October 4th, 2016
110 Points total (10 bonus points)
1. (110 Points total)
a) What is the electrical resistance of a 0.125mm3 slab of N-type doped silicon with
Nd = 1016cm-3 when measuring it along it