1.9 Kinetic Molecular Theory Calculate the effective (rms) speeds of the He and
Ne atoms in the He-Ne gas laser tube at room temperature (300 K).
Solution
To find the root mean square velocity (vrms) of He atoms at T = 300 K:
The atomic mass of He is (fro
ECE 3200
Homework #6 (Due at 9:10 am on Thursday; March 3, 2016)
Textbook Example (5 points each):
[1] Repeat Example 3.8 when the semiconductor doping level is ND = 5 1016 cm-3.
[2] Repeat Example 3.9 (a) when sc-ph = 1 ns.
Textbook Problems (10 points e
ECE 3200
Homework #3 (Due: Beginning of the class on Thursday, February 2, 2017)
* 10 points for each problem
Textbook Problems:
[1] 2.1
[2] 2.2
[3] Example 2.1
[4] Example 2.2
[5] Example 2.3
Extra Credit (30 points for each problem):
Study your textbook
ECE 3200
Homework #2 (Due: Beginning of the class on Thursday, January 26, 2017)
* 10 points for each problem
Review problem in text:
[1] Example 1.7 (a), (b) this example solves a case where the thermally generated electrons and
holes (from covalent bond
ECE 3200
Homework #1 (Due: Beginning of the class on Tuesday, January 17, 2017)
* 10 points for each problem
Textbook Problems:
[1] Example 1.3
[2] Problems 1.1 (b), (c)
ANSWER 1.1 (c): 0.340
[3] Problem 1.11 (Please study your textbook pp. 9 ~ 12).
ANSWE
ECE 3200
Homework #5 (Due at 9:10 am on Thursday, March 2, 2017)
Textbook Example:
[1] Example 3.2 (c), (d).
[2] Repeat Example 3.6 when P-type silicon has a resistivity of 0.4 cm.
[3] Repeat Example 3.8 when the semiconductor doping level is ND = 5 1016
ECE 3200
Homework #4 (Due at 9:10 am on Tuesday; Feb. 21, 2017)
Textbook Problems:
[1] Repeat Example 2.7 (a) for intrinsic GaAs and for intrinsic Ge (reference: Table 2.1)
[2] Repeat Example 2.12 for intrinsic Si and for intrinsic Ge (reference: Table 2.
ECE 3200
Homework #10 (Due at 9:10 am on Tuesday, April 25, 2017)
Practice Problems (10 points each):
[1] Problem 6.2
[2] Problem 6.10 (b)
[3] Problem 6.15
[4-6] Old Exam Problems
[7] (Optional; 40 pts) Extra Credit Opportunity
An abrupt Si P-N junction h
ECE 3200
Homework #10 (Due at 9:10 am on Thursday, April 13, 2017)
Practice Problems (10 points each):
[1] Problem 6.1
[2] Problem 6.4 (a), (b)
[3] Problem 6.5
[4] Previous Exam Problem (20 points)
[5] Previous Exam Problem (30 points)
6.4
(a)
6.5
, (b)
[
ECE 3200
Homework #7 (Due at 9:10 am on Thursday, March 23, 2017)
Textbook Problems (10 points each):
[1] Problem 3.15
[2] Problem 3.18
[3] Problem 3.28
[4] Problem 4.2
[5] Problem 4.4
(continue)
Old Exam Problems (Problem 6: 10 points; Problem 7: 30 poin
ECE 3200
Homework #8 (Due at 9:10 am on Thursday, March 30, 2017)
Practice Problems (10 points each):
[1] Problem 5.2
[2] Problem 5.5 (case 1 only; Gext = 1012 cm-3s-1)
[3] Problem 5.7
[4] Problem 5.10
Review Problems (10 points each):
[5] Review Problem
ECE 3200
Homework #4 (Due at 9:10 am on Thursday; Feb. 11, 2016)
Textbook Problems:
[1] Repeat Example 2.7 (a) for intrinsic GaAs and for intrinsic Ge (reference: Table 2.1)
[2] Repeat Example 2.12 for intrinsic Si and for intrinsic Ge (reference: Table 2
ECE 3200
Homework #7 (Due: Thursday, March 10 at 9:10 am)
Textbook Problems (10 points each):
[1] Problem 3.15
[2] Problem 3.18
[3] Problem 3.21
[4] Problem 3.28
[5] Problem 4.2
[6] Problem 4.4
Extra Credit (max: 30 points; due on Wednesday 3/9):
[7] Revi
Homework7,DueThursMarch10inClass
ECE3200:IntroductiontoSemiconductorDevicePhysics
Prof.Scarpulla,Spring2011
Problems:
0) Were going to try a new pedagogical idea here. For problem 0 of this assignment, each of
youshouldcreateaproblemfortheexamfromChapter3
Homework8,DueThursApril7,InClass
ECE3200:IntroductiontoSemiconductorDevicePhysics
Prof.Scarpulla,Spring2010
*
Note: I pushed the Chapter 4 exam date back to Thurs April 7th to allow us to reasonably
study the content in Chap 4. Please check the updated ca
Homework 7
Part a
Part b
Part c
3.15 Tunneling
a. Consider the phenomenon of tunneling through a potential energy barrier of height Vo
and width a, as shown in Figure 3.16. What is the probability that the electron will
be reflected? Given the transmissio
4.4 Compound III-V semiconductors Indium as an element is a metal. It has a valency of III. Sb as an
element is a metal and has a valency of V. InSb is a semiconductor, with each atom bonding to four neighbors,
just like in silicon. Explain how this is p
Problem 3 - Types of Materials | {32 pts]
For parts a-d, imagine that you work for a company and need to identify' some unmarked samples of
unknown materials found in a warehouse
Material #1
The conductivity of this material goes up with increasing temper
[-'18 pts]
Problem 1 - Atoms
a)
[3 pts] What is an atom? (20 words max)
A,
tJvr(jvf1~
b)
Jo/lf l~ ()./')dvt-ojtdrc.J~
~
nocleus, wJ,~CA
COl1.J.r:tihS
ftlJft;hJ
tI'
5 'j!?.nwr
kuYl~
der-/.rt) n 5
r: JI/&/tiflI"3,
[2 pts] How many protons are in an atom of
ECE 3200
Homework #3 (Due at 9:10 am on Thursday; Feb. 4th, 2016)
Please note that the HW submitted after the class wont be accepted (to be fair to other students).
Textbook Problems:
[1] 2.1
[2] 2.5
[3] 2.7
Extra Credit (10 points):
[4] Example 2.2 and 2
ECE 3200
Homework #5 (Due at 9:10 am on Thursday; Feb. 18, 2016)
Textbook Problems:
[1] Repeat Example 2.17 for P-type silicon (NA = 1016 cm-3). The steady-state concentration of the
additional electron-hole pairs is the same (i.e., n = n = 2 1016 cm-3).