EE539 MEMS Midterm Examination
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EE539 MEMS Midterm Examination
November 18, 1998
Problem 1 (foundry processes)
For the following designs, decide which standard MEMS process (CMOS, LIGA, M
EE502 / ME504 / MSE504 : Introduction to MEMS
Midterm Exam Solutions
November 15, 2012
Name:_
Student ID:
_
Problem 1 (Short Questions and Answers)
25 points
(a) Why are there no macro-scale electrostatic motors? Give an equation to support your
argument.
EE 502 PMP Summer 2014 HW6 Solutions
Solution:
is the Coriolis force due to the rotation of the system
(a) The vertical force
and horizontal movement of the mass. Its expression is as follows:
2 sin
For this problem, the system is rotated around the z axi
EE 502 PMP Summer 2014 HW2 Solutions
(a) MEMS companies Kurt Petersen has helped found:
Company Name
KP-MEMS
Its a consulting company specialized in
MEMS industry.
Profusa
Its a private company developing
implantable glucose sensors.
Verreon
It was acquir
EE 502 PMP Summer 2014 HW4 Solutions
Solution:
The sacrificial layer should be able to provide both mechanical and chemical support for the
structure layer. Because the surface micromaching process uses LPCVD polycrystalline silicon
as the structure layer
Problem 1
Not using a POLYx/Metal mask, etches and remove the complete respective poly/Metal layer. Not
using a ANCHORx, PIP2VIA or Dimple mask, patterns no such feature.
The first four combinations are valid process steps and may result in something mean
EE502 / ME504 / MSE504 Introduction to MEMS
Implantable microsystem for passive, wireless, pulmonary health monitoring
Stefan Bjornsson1, Rahil Jain2, Wei Sun3, Kiran Upadhyayula2
Instructor: Prof. Karl Bhringer
University of Washington
Seattle, WA 98105
Problem 1
In order to maximize proof mass for a given force constant, k, and area, we can increase the
thickness, T, of the proof mass.
The maximum thickness, T, possible in MUMPS process is:
T= tpoly1+tpoly2+tmetal
Where
tpoly1= tbeam = 2 m
tpoly2= 1.5 m
Problem 1
A bimetallic cantilever beam subjected to a temperature change, T, bends in an arc with length L
and radius of curvature, r, (eq 5.14 Textbook) given by:
where w and t represents the width and thickness of the two beams and E and being the Young
Problem 1
Research Group
Zhang Lab
Integrated MEMS group
Ziaie Biomedical Microdevices
Lab
MEMS group
Nano group
BioMEMS research group
BioMEMS research unit
MEMS research group
University
UC Berkeley, US
GaTech, US
Purdue U, US
MIT, US
U Southampton, UK
Introduction to MEMS
Part 1
Fabrication
Techniques
for MEMS
Karl F Bhringer
Autumn 2012
Today
Introduction
Commercial prospects for MEMS
Properties and manufacture of silicon:
material properties, wafer identification,
Handouts (on the web):
Silico
A Sample MEMS Process
SCREAM Single-crystal-silicon
Reactive Etching and Metallization
Sample Process
Walk through a common MEMS process
Ignore fabrication details for now, instead
focus on geometric operations:
patterning
deposition (addition of mate
EE 502 PMP Summer 2014 HW7 Solutions
Solution:
(a) Today the commercially available tire pressure sensors are powered by battery. A
popular wheel-mounted Tire Pressure Sensor (TPS) package is shown in Figure 1. The
battery is used to provide power for the
EE 502 PMP Summer 2014 HW5 Solutions
Solution:
The layouts for the structures in the three red boxes are as follows:
Solution:
You can have different process flows for this problem. Following is one example.
The important steps are shown in the following
EE502 / ME504 / MSE504 Introduc
2
4
4:
ction to ME
EMS
Midterm Examina
m
ation
Decembe 4, 2008
er
3:30pm 5:20pm, in class, open book, open notes
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Name:_S
Solutions_
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Stud ID:
dent
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Permittiv of free space: 0 = 8.854 1014 F/
vity
/cm
Density o sil
EE502 / ME504 / MSE504 Introduction to MEMS
Midterm Exam
Handed out Monday, November 24, 2003. 2 hours, open notes.
250 points (out of 1000 total)
Problem 1 (MUMPs)
(70 points)
MEMS foundry processes such as MUMPs provide a well-established microfabricati
EE502 / ME504 Introduction to MEMS
Midterm Exam
Handed out Monday, November 20, 2000, 3:30pm. Due 5:20pm. Open book, open notes.
200 points (out of 1000 total)
Problem 1 (Scaling Effects)
24 points
If we shrink down a device to the half of its original ge
EE502 / ME504 / MSE504 Intro to MEMS Midterm Exam Solutions
Handed out Monday, November 25, 2002. In class, open book, open notes.
250 points (out of 1000 total)
Problem 1 (LIGA)
30 points
A watch manufacturer orders a large quantity of tiny gears from yo
EE539 Introduction to Microelectromechanical Systems
Midterm Exam
November 17, 1999
Name: _
Student ID: _
Dielectric constant of free space: 8.854 10-12 F/m
Density of silicon: 2.23 g/cm3
Problem 1 (Grating Light Valve Design 10+10+20+20 points)
Assume yo
EE502 / ME504 / MSE504 Introduction to MEMS
Handed out Monday, November 19, 2001, 3:30pm. Due 5:20pm.
200 points (out of 1000 total)
Problem 1 (Anisotropic Etching)
25 points (approx. 15 min)
Consider the patterned wafer on the right. Its primary flat is
EE 502 PMP Summer 2014 HW1 Solutions
Solution:
In this paper, Richard Feynman made many predictions and some of them are specific ones, and
some of them are more abstract ideas. In the following I listed some of them. The answer to this
problem can vary a
EE 502 PMP Summer 2014 HW3 Solutions
Solutions:
This is a open problem and your answers will be ok once that are reasonable. For example,
5 Dos:
1.
2.
3.
4.
5.
6.
Wear cleanroom garment;
Ask questions if you are not sure about how to use equipment;
Follow
EE502/ME504/MSE504 Introduction to MEMS
Problem Set #4
Autumn 2013
Due date: Monday 11/25 (collect in class)
Problem #1
Consider the cantilever beam with a width
resistance change as a function of .
. Find the mathematical expression of the
Problem #2
A s
EE502 / ME504 / MSE504
Introduction to
Microelectromechanical Systems (MEMS)
Lecture 27
Tai-Chang Chen
University of Washington
MAGNETIC FIELDS AND MKS UNITS
Permeability, :
the measure of the ability of a material to support the formation of a
magnetic
EE502 / ME504 / MSE504
Introduction to
Microelectromechanical Systems (MEMS)
Lecture 14
Tai-Chang Chen
University of Washington
INTRINSIC STRESS
The intrinsic stress: the stress is experienced by thin film materials
under room temperature and zero loadin
EE502 / ME504 / MSE504
Introduction to
Microelectromechanical Systems (MEMS)
Lecture 11
Tai-Chang Chen
University of Washington
CHARGED PARTICLE IN MOTION
Electron in vacuum
Force:
E
Velocity:
Where acceleration is a constant if the external force
is fixe