Winter 2011- EE482
Solutions to HW1:
1(a):
1(b):
1ev is the energy gained by an electron falling through a 1V potential difference.
1Joule is the energy gained by a 1C charge accelerated through a 1V
Homework #3 - EE 482
due 1/24/11
1. At room temperature, the scattering lifetime for holes in a given material is 3 ps and ionized impurity
scattering and lattice scattering are equally probable.
(a)
Homework #4 - EE 482
due 1/31/11
1. A 1 -cm p-type silicon sample contains 1012 cm3 generation-recombination centers located 0.1eV
below the intrinsic Fermi level with n = p = 1015 cm2 , vthn = 107 s1
Homework #5 - EE 482
due 2/11/10
1. When aluminum is deposited on p-type silicon a Schottky barrier diode with B = 0.38 V is formed.
(a) If the doping in the silicon is 1017 cm3 , what is the barrier
Homework #2 - EE 482
due 1/18/11 (Tuesday due to MLK holiday)
1. Sketch the Fermi-Dirac distribution and appropriate forms of the Maxwell-Boltzmann approximation versus energy on a common set of axes.
HW 6
(due in class on November 05)
1. In a p-n junction at equilibrium there is large change in electron density when we go from the
n- to p-sides. What prevents these electrons from diffusing to the
HW 9
(Due Wed Nov 26)
1) Using Atlas, model a MOSCAP (Si and SiO2) with uniform p-type doping density of 1E17 per
cm3. Use a gate oxide thickness of 4 nm on top of a Si box of dimensions 10 micron by
Lecture Note 2: Quantum Mechanics
Introduction
1) HistoricalMotivationforQuantumMechanics
a. PlancksHypothesis
b. DeBrogliePrinciple
c. Youngsdoubleslitexperiment
d. EnergylevelsofHydrogenatoman
Lecture Note 6: Diode
Electrostatics
Band diagram of a PN junction at equilibrium
Depletion region width at finite applied biases
Current density
Small signal response of a diode (capacitance and cond
Lecture Note 8: Junctions between metal /
insulators / semiconductors
Definitions
Junctions between metals and semiconductors
Current-Voltage Characteristics of a Schottky Diode
Highly doped Schottky
Lecture Note 3: Velocity, Force and
Effective Mass
1) Velocity of an electron in a material with a band structure E (k )
2) Relationship between force and time evolution of wave vector k .
3) Effectiv
Name
Final Exam EE 482
Winter 2009
The test is open book/open notes. Show all work. Be sure to state all assumptions made and check them
when possible. The number of points per problem are indicated i
Final Exam EE 482
Winter 2011
This is a take-home exam, due back by 3pm on Thursday, 3/17. To submit your completed exam, either scan and attach
to email or slip under the door of my oce.
Please do no
Name
Quiz #2 EE 482
Winter 2010
The test is open book/open notes. Show all work. Be sure to state all assumptions made and
check them when possible. The number of points per problem are indicated in p