Winter 2011- EE482
Solutions to HW1:
1(a):
1(b):
1ev is the energy gained by an electron falling through a 1V potential difference.
1Joule is the energy gained by a 1C charge accelerated through a 1V potential
difference.
2ev 2 (1.6 1019 )CV 3.2 1019 J
m
Name
Final Exam EE 482
Winter 2009
The test is open book/open notes. Show all work. Be sure to state all assumptions made and check them
when possible. The number of points per problem are indicated in parentheses. Total of 160 points in 5
problems on 7 p
Homework #3 - EE 482
due 1/24/11
1. At room temperature, the scattering lifetime for holes in a given material is 3 ps and ionized impurity
scattering and lattice scattering are equally probable.
(a) The temperature is changed in such a way that the proba
Homework #4 - EE 482
due 1/31/11
1. A 1 -cm p-type silicon sample contains 1012 cm3 generation-recombination centers located 0.1eV
below the intrinsic Fermi level with n = p = 1015 cm2 , vthn = 107 s1 and vthp = 6 106 s1 .
T = 300K.
(a) If incident radiat
Homework #5 - EE 482
due 2/11/10
1. When aluminum is deposited on p-type silicon a Schottky barrier diode with B = 0.38 V is formed.
(a) If the doping in the silicon is 1017 cm3 , what is the barrier presented to holes in the silicon?
(b) If in reverse bi
Homework #2 - EE 482
due 1/18/11 (Tuesday due to MLK holiday)
1. Sketch the Fermi-Dirac distribution and appropriate forms of the Maxwell-Boltzmann approximation versus energy on a common set of axes. How far must the energy be above the Fermi level at
30
Homework #6 - EE 482
due 2/18/11
1. Consider an abrupt (step) silicon diode whose parameters are:
Nd = 1019 cm3
Na = 1017 cm3
Wn = 200m
Wp = 0.2m
(a) Calculate the breakdown voltage at 300K. Consider all three possible breakdown mechanisms. Use
breakdown
HW 6
(due in class on November 05)
1. In a p-n junction at equilibrium there is large change in electron density when we go from the
n- to p-sides. What prevents these electrons from diffusing to the p-side? Only a qualitative
discussion is needed.
2. (a)
HW 9
(Due Wed Nov 26)
1) Using Atlas, model a MOSCAP (Si and SiO2) with uniform p-type doping density of 1E17 per
cm3. Use a gate oxide thickness of 4 nm on top of a Si box of dimensions 10 micron by 10
micron. You can neglect the work function of the gat
Lecture Note 2: Quantum Mechanics
Introduction
1) HistoricalMotivationforQuantumMechanics
a. PlancksHypothesis
b. DeBrogliePrinciple
c. Youngsdoubleslitexperiment
d. EnergylevelsofHydrogenatomandBohrshypothesis
e. Tunneling
2) Schordingersequation
a
Lecture Note 6: Diode
Electrostatics
Band diagram of a PN junction at equilibrium
Depletion region width at finite applied biases
Current density
Small signal response of a diode (capacitance and conductance)
Depletion capacitance (valid both in forward a
Final Exam EE 482
Winter 2011
This is a take-home exam, due back by 3pm on Thursday, 3/17. To submit your completed exam, either scan and attach
to email or slip under the door of my oce.
Please do not discuss the exam with anyone else, in or out of the c
Name
Quiz #2 EE 482
Winter 2010
The test is open book/open notes. Show all work. Be sure to state all assumptions made and
check them when possible. The number of points per problem are indicated in parentheses.
1. In a piece of Si doped with Nd = 1016 cm
Name
Exam #1 EE 482
Winter 2009
The test is open book/open notes. Show all work. Be sure to state all assumptions made and check
them when possible. The number of points per problem are indicated in parentheses. Total of 100
points in 5 problems on 4 page