Problem 1.
-Problem 2.
Problem 3.
Heres the solution for the 5% case.
-Problem 4.
Effective density of states Nc is proportional to effective mass (m*)3/2.
(1) Effective mass is inversely proportional to the curvature of E-k diagram at the minimum,
where
Section 2.1 Principles of Quantum Mechanics
Energy Quanta: Experiments with the photoelectric effect and dark body radiation show that the energy comes in discrete packets.
Chapter 2 Introduction to Quantum Mechanics
In order to understand the current-vol
Chapter 5 Preview
Chapter 5
Carrier Transport Phenomena
The net flow of the electrons and holes in a semiconductor will generate currents. The process by which these charged particles move is called transport. In this chapter we will consider the two basi
Please review the following problems in addition to the HWs, problems discussed in
the lectures and the text. and the lecture notes.
Focus on understanding the concepts and processes happening in each case. Each case
may have a different assumption than
Chapter 4
Chapter 4
The Semiconductor in Equilibrium
In this chapter, we will apply the concepts of quantum mechanics to a semiconductor material. In particular, we wish to determine the concentration of electrons and holes in the conduction and valence b
Chapter 6 Preview
Chapter 6
Nonequilibrium Excess Carriers in Semiconductors
When a voltage is applied or a current exists in a semiconductor device, the semiconductor is operating under nonequilibrium conditions. In this chapter, we will discuss the beha
Chapter 7 Preview
Chapter 7
The pn Junction
We now wish to consider the situation in which a p-type and an ntype semiconductor are brought into contact with one another to form a pn junction. Most semiconductor devices contain at least one junction betwee
Preview In the last chapter, we discussed the electrostatics of the pn junction in thermal equilibrium and under reverse bias. We determined: The built-in potential barrier Vbi. The electric field (max at the metallurgical junction). The junction capacita
Overview
Chapter 3 Introduction to the Quantum Theory of Solids
This chapter generalizes previous work to the electron in a crystal lattice.
Two major points: Determine the properties of electrons in a crystal lattice. Determine the statistical characteri
Preview
Chapter 1 The Crystal Structure of Solids
This course deals with the electrical properties and characteristics of semiconductor materials and devices.
The electrical properties of solids are therefore of primary interest.
Material covered on pages
EE 332 Fall 2010
Homework 5 (Due Tue Mar 2)
Note: Mobilities depend on dopant concentration. Intrinsic mobility is given in table at the back
of the textbook. To estimate mobility for a particular dopant concentration, figure 3.23 in the text
can be used.
HW 4 (Due Thu 02/11)
EE 332 Fall 2010
Note: Appendix III in your textbook has values for known semiconductor properties like band
gap, mobility, effective mass etc. You can use them if you need in any of the questions. They
will also be provided to you du
Prob. 1.2
F ind packing fraction offcc unit cell.
nearest atom separation = ¥A = 3.5413;
tetrahedral radius = 1.77131
volume of each atom = 23.14135 .
number of atoms per eube= 6g + 8% = 4 atoms
. 3
packing fraction = = 0.74 = 74%
(SAT Prpb.'1.4
Ca
Problem x. Answer does not have to be identical to the following, but on these lines.
(a) Two expressions are different because in case of potential well, potential inside the well is
zero and on the edges is infinite. In case of Bohrs atomic model, elect
HOMEWORK 6 (EE 332 Spring 2010)
Problem 1.
Problem 2.
Problem 3. This problem was same as the problem 4 of HW 5 except the very last sub-question. Most of
the current is carried by electrons since Na is less than Nd. To double to electron current, halve t
HW 7 Solutions (EE 332 Spring 2010)
Problem 1.
.eq1
(a) Open circuit voltage Voc =
Photocurrent Jop (given) = 15 mA/cm2
Jth = (Lp/p)pn + (Ln/n)np
We know that L2 = D.
Therefore, using the given values of D and for both carriers, one can calculate Jth = 3.
HW 6 (Due Tue Mar 9)
EE 332 Spring 2010
Problem 1. Find Vbi, xn0, xp0, Q+ and E0 for a silicon p-n junction at 300 K. n side doping is 1016
cm-3, and p side doping is 4 x 1018 cm-3. Cross-sectional area of junction is 2 x 10-3 cm2. Sketch
the electric fie
HW 7 (EE 332 Spring 2010)
Due Tuesday March 23rd, 2010
Problem 1. (a) Calculate the open circuit voltage of a silicon PN junction solar cell, if short-circuit
photocurrent is 15 mA/cm2, and other parameters are the following: Acceptor density = 5 x 1018 c
Preview The single junctions devices considered so far are passive devices in that it is not capable of gain. The transistor is a multifunction semiconductor device that in conjunction with other circuit elements, is capable of current gain, voltage gain,