TECHNOLOGY BRIEF 7: INTEGRATED CIRCUIT FABRICATION PROCESS
135
Technology Brief 7: Integrated Circuit Fabrication Process
Do you ever wonder how the processor in your computer was actually fabricated? How is it that engineers can put
hundreds of millions
20
TECHNOLOGY BRIEF 2: MOORES LAW AND SCALING
Technology Brief 2: Moores Law and Scaling
In 1965, Gordon Moore, co-founder of Intel, predicted that the number of transistors in the minimum-cost processor
would double every two years (initially, he had gue
Under the Hood
iPhone 3Gs
& the Nexus One
What can you do
with your Apps?
Prof. C. Patrick Yue, High-Speed Silicon Lab, UCSB
2/3/2010
Slide 2
Photo Credits and References
www.iSupply.com
www.phonewreck.com/2009
www.ifixit.com
iPhone 3Gs
Nexus One
w
ELEC 3400: Introduction to
Integrated Circuits and Systems
Chapter 7: Transfer Function, Bode Plots
and Frequency Responses
Instructor: Professor Wing-Hung Ki ()
Course Website: http:/course.ee.ust.hk/elec101
HKUST, 2011 Fall
Chapter 7: Content
1.
2.
3.
4
ELEC 3400
1.
VI. Operational Amplifiers
MOS Differential Pair with Resistive Loads
A very important amplifier stage is the differential pair. It consists of
a current source (sink) biasing a pair of matched input transistors, that
is, (W/L)1 = (W/L)2, and
ELEC 3400
1.
V. Single-Transistor Amplifiers
Large Signal Analysis of a Single-Transistor Amplifier
An inverting amplifier can be constructed with an NMOS transistor
plus a resistor (and voltage source, of course).
Vdd
VR R
Vi
G
D
S
Vdd: highest voltage i
ELEC 3400
1.
IV. Digital Integrated Circuits
Static Performance of an Inverter
1.1 Ideal Logic Inverter
An ideal logic inverter, or simply ideal inverter, has a well-defined
"1" and "0" (high and low).
VO
5
y
x
4
log ic
3
2
VI
VO
1
0
voltage
For example,
ELEC 3400
1.
III. Biasing and Current Mirrors
DC Biasing
To bias a device is to put it into a specific DC voltage and/or DC
current. DC biasing of MOS circuits is best demonstrated through
examples. For the following examples, Vdd = 5V, and
nCox = 50A/V2,
ELEC 3400
1.
II. MOS Transistors
MOS Basics
Transistor stands for trans-resistor. Recall that a 2-terminal element
is described by its I-V characteristics, and V/I is the resistance of the
device. Now, if this resistance can be modified by a third termina
ELEC 3400
1.
I. PN Junctions
PN Junction Basics
Silicon (Si, atomic number 14) is a valence IV material, having 4
electrons in its outermost shell. The silicon crystal has Si atoms
arranged on a tetrahedral grid such that each Si atom is surrounded by
4 o
ELEC 3400
Homework 7
For exercise only. No need to hand in.
(1)
(S 7-1)
For an NMOS differential pair shown below, let Vdd = Vss =
2.5V,nCox(W/L) = 3mA/V2, Vtn = 0.7V, I = 0.2mA, Rd = 5k,
and n = 0/V. (a) Find Vov and Vgs of each transistor. (b) For
Vcm =
ELEC 3400
Issued:
Due:
Homework 6
Dec. 1, 2011 (Thursday)
Dec. 10, 2011 (Friday)
Scanned submission is OK. Please send to liuyonggen@ust.hk.
(1)
Some computations on complex numbers.
(1a) For a complex number z = a+jb, show that |z| = |z*|.
(1b) z1 = 12 +
(1)
(1a)
Figure 1 is the circuit. Figure 2 shows the DC operation point. We can see Vo is 2.192V and Id is
280.78uA when Vin = 1.5V
Figure 1
(1b)
Vo vs Vin curve is as follows.
Figure 2
Figure 3
(1c)
Vin=1.4, Vo=3.1
Vin=1.5, Vo=2.2
Vin=1.6, Vo=1.18
(i)
Vo
ELEC 3400
Issued:
Due:
Homework 3
Oct. 17, 2011 (Monday)
Oct. 28, 2011 (Friday)
(1)
(J 7.17)
Compute the noise margins NML and NMH of a minimum size
CMOS inverter in which both W/L ratios are 2/1 and Vdd =
2.5V. Characteristics of transistors: kn' = nCox
ELEC 3400
Issued:
Due:
Homework 2
Sept 28, 2011 (Wednesday)
Oct 3, 2011 (Monday)
(1a) Calculate the drain current of an NMOS transistor if kn =
250A/V2, Vtn = 0.75V, Vgs = 2V, Vds = 5V, and n = 0/V.
(1b) Repeat the above calculation for n = 0.05/V.
(2)
(S
ELEC 3400
Issued:
Due:
(1)
Homework 1
Sept 14, 2011 (Wednesday)
Sept 26, 2011 (Monday)
(S 3-10)
Assume that the diodes in the circuits below are ideal, use
Thevenin's theorem to simplify the circuits and thus find the
values of the labeled currents and vo