TECHNOLOGY BRIEF 7: INTEGRATED CIRCUIT FABRICATION PROCESS
Technology Brief 7: Integrated Circuit Fabrication Process
Do you ever wonder how the processor in your computer was actually fabricated? How is it that engineers can put
hundreds of millions
TECHNOLOGY BRIEF 2: MOORES LAW AND SCALING
Technology Brief 2: Moores Law and Scaling
In 1965, Gordon Moore, co-founder of Intel, predicted that the number of transistors in the minimum-cost processor
would double every two years (initially, he had gue
Under the Hood
& the Nexus One
What can you do
with your Apps?
Prof. C. Patrick Yue, High-Speed Silicon Lab, UCSB
Photo Credits and References
ELEC 3400: Introduction to
Integrated Circuits and Systems
Chapter 7: Transfer Function, Bode Plots
and Frequency Responses
Instructor: Professor Wing-Hung Ki ()
Course Website: http:/course.ee.ust.hk/elec101
HKUST, 2011 Fall
Chapter 7: Content
VI. Operational Amplifiers
MOS Differential Pair with Resistive Loads
A very important amplifier stage is the differential pair. It consists of
a current source (sink) biasing a pair of matched input transistors, that
is, (W/L)1 = (W/L)2, and
V. Single-Transistor Amplifiers
Large Signal Analysis of a Single-Transistor Amplifier
An inverting amplifier can be constructed with an NMOS transistor
plus a resistor (and voltage source, of course).
Vdd: highest voltage i
IV. Digital Integrated Circuits
Static Performance of an Inverter
1.1 Ideal Logic Inverter
An ideal logic inverter, or simply ideal inverter, has a well-defined
"1" and "0" (high and low).
III. Biasing and Current Mirrors
To bias a device is to put it into a specific DC voltage and/or DC
current. DC biasing of MOS circuits is best demonstrated through
examples. For the following examples, Vdd = 5V, and
nCox = 50A/V2,
II. MOS Transistors
Transistor stands for trans-resistor. Recall that a 2-terminal element
is described by its I-V characteristics, and V/I is the resistance of the
device. Now, if this resistance can be modified by a third termina
I. PN Junctions
PN Junction Basics
Silicon (Si, atomic number 14) is a valence IV material, having 4
electrons in its outermost shell. The silicon crystal has Si atoms
arranged on a tetrahedral grid such that each Si atom is surrounded by
For exercise only. No need to hand in.
For an NMOS differential pair shown below, let Vdd = Vss =
2.5V,nCox(W/L) = 3mA/V2, Vtn = 0.7V, I = 0.2mA, Rd = 5k,
and n = 0/V. (a) Find Vov and Vgs of each transistor. (b) For
Dec. 1, 2011 (Thursday)
Dec. 10, 2011 (Friday)
Scanned submission is OK. Please send to firstname.lastname@example.org.
Some computations on complex numbers.
(1a) For a complex number z = a+jb, show that |z| = |z*|.
(1b) z1 = 12 +
Figure 1 is the circuit. Figure 2 shows the DC operation point. We can see Vo is 2.192V and Id is
280.78uA when Vin = 1.5V
Vo vs Vin curve is as follows.
Oct. 17, 2011 (Monday)
Oct. 28, 2011 (Friday)
Compute the noise margins NML and NMH of a minimum size
CMOS inverter in which both W/L ratios are 2/1 and Vdd =
2.5V. Characteristics of transistors: kn' = nCox
Sept 28, 2011 (Wednesday)
Oct 3, 2011 (Monday)
(1a) Calculate the drain current of an NMOS transistor if kn =
250A/V2, Vtn = 0.75V, Vgs = 2V, Vds = 5V, and n = 0/V.
(1b) Repeat the above calculation for n = 0.05/V.
Sept 14, 2011 (Wednesday)
Sept 26, 2011 (Monday)
Assume that the diodes in the circuits below are ideal, use
Thevenin's theorem to simplify the circuits and thus find the
values of the labeled currents and vo