Tutorial 3
Q1. A receiving system employs an antenna with a noise temperature of 40 K which is connected to
a parametric amplifier through a waveguide with 1.6 dB loss. The parametric amplifier has a gain of
16 dB and a noise temperature of 60 K. The ampl
Tutorial 3
Q1. A receiving system employs an antenna with a noise temperature of 40 K which is connected to
a parametric amplifier through a waveguide with 1.6 dB loss. The parametric amplifier has a gain of
16 dB and a noise temperature of 60 K. The ampl
EE4101 Tut 2
Q1 A certain GaAs MESFET has the following S parameters measured at 9 GHz with a 50 ohms
reference:
S11 = 0.64 /-170o
S22 = 0.57 /-95o
S12 = 0.05 /15o
S21 = 2.10 /30o
(a) Determine the amplifiers type of stability by computing the delta facto
EE4101 Tut 2
Q1 A certain GaAs MESFET has the following S parameters measured at 9 GHz with a 50 ohms
reference:
S11 = 0.64 /-170o
S21 = 0.57 /-95o
S12 = 0.05 /15o
S22 = 2.10 /30o
(a) Determine the amplifiers type of stability by computing the delta facto
Tutorial 1
Q1. Design an amplifier for maximum gain at 6 GHz using single-stub matching sections. Calculate
the gain. The GaAs FET has the following S parameters ( Z 0 = 50 ):
f (GHz)
S11
S21
S12
S22
0.55 150
2.56108
0.0430
0.60 50
6.0
l3
50
l4
50
50
5
Tutorial 1
Q1. Design an amplifier for maximum gain at 6 GHz using single-stub matching sections. Calculate
the gain. The GaAs FET has the following S parameters ( Z 0 = 50 ):
f (GHz)
S11
S21
S12
S22
0.55 150
2.56108
0.0430
0.60 50
6.0
l3
50
l4
50
50
5