Name:_
Student Number:_
ELEC 3908 Physical Electronics
Quiz #2
Practice Problem Set
? Minutes
October 15, 2010

No aids except a nonprogrammable calculator
All questions must be answered
All questions have equal weight
Answer questions on quiz sheets (u
Student #:
The circuit below is constructed using an ideal operational amplifier (infinite gain), two ideal
diodes and a resistor.
a)
#,fdffi
Y
Can this circuit act as a logarithmic amplifier?
lur,T1^u dtk* c*t"ry,^4 is siltcfw_
eF Po* a*$ rft ,$l*f e
ELEC 3908, Physical Electronics, Lecture 17
Bipolar Transistor Injection
Models
Lecture Outline
Last lecture looked at qualitative operation of the BJT,
now want to develop a quantitative model to predict
terminal currents as functions of terminal voltag
ELEC 3908, Physical Electronics, Lecture 13
Diode Small Signal Modeling
Lecture Outline
Last few lectures have dealt exclusively with modeling and
important effects in static (dc) operation
Different modeling strategy required for small signal
operation
ELEC 3908, Physical Electronics, Lecture 12
pn Junction Reverse
Breakdown
Lecture Outline
So far the diode model equation accuracy in forward and
reverse bias has been improved through incorporation of
more physical effects
A new effect becomes importan
ELEC 3908, Physical Electronics, Lecture 14
Diode Switching
Lecture Outline
Previous lecture examined small signal operation
response to a small perturbation on a dc bias point
Large signal, or switching analysis finds response to a
signal which causes
ELEC 3908, Physical Electronics, Lecture 11
pnJunction Electrostatics
Lecture Outline
Initial discussion of diode equilibrium in lecture 8 showed
that an electric field is built up when carriers diffuse across
the metallurgical junction forming the depl
ELEC 3908, Physical Electronics, Lecture 10
Diode Model Parameter Extraction
Lecture Outline
Last 2 lectures developed basic ideal diode equation, then improved with depletion region GR and parasitic resistance The result is a model for current which con
ELEC 3908, Physical Electronics, Lecture 3
Energy Band Diagrams and
Doping
Lecture Outline
Begin the study of semiconductor devices by looking at the
material used to make most devices
The energy band diagram is a representation of carrier
energy in a s
ELEC 3908, Physical Electronics, Lecture 18
The Early Effect, Breakdown
and SelfHeating
Lecture Outline
Previous 2 lectures analyzed fundamental static (dc) carrier
transport in the bipolar transistor (transistor action,
injection model)
This lecture l
ELEC 3908, Physical Electronics, Lecture 16
Bipolar Transistor Operation
Lecture Outline
Last lecture discussed the structure and fabrication of a
double diffused bipolar transistor
Now examine current transfer in the bipolar structure in a
qualitative
ELEC 3908, Physical Electronics, Lecture 24
Channel Shortening and
dc Parameter Extraction
Lecture Outline
Last two lectures discussed models for threshold voltage
and basic square law model
One more important effect not included in square law
model is
ELEC 3908, Physical Electronics, Lecture 15
BJT Structure and Fabrication
Lecture Outline
Now move on to bipolar junction transistor (BJT)
Strategy for next few lectures similar to diode: structure
and processing, basic operation, basic quantitative
mod
ELEC 3908, Physical Electronics, Lecture 23
The MOSFET Square Law
Model
Lecture Outline
As with the diode and bipolar, have looked at basic
structure of the MOSFET and now turn to derivation of a
current model in terms of potentials and physical quantiti
ELEC 3908, Physical Electronics, Lecture 22
MOSFET Threshold Voltage
Lecture Outline
Last lecture described qualitative MOSFET operation in
terms of the threshold voltage
The threshold voltage will now be considered in a more
rigorous, quantitative mann
ELEC 3908, Physical Electronics, Lecture 21
MOSFET Operation
Lecture Outline
Last lecture examined the MOSFET structure and required
processing steps
Now move on to basic MOSFET operation, some of which
may be familiar
First consider drift, the movemen
ELEC 3908, Physical Electronics, Lecture 20
MOSFET Structure and
Processing
Lecture Outline
To better understand how to model the behavior of the
MOSFET, begin the same way as the diode and bipolar,
consider fabrication of the basic structure
An importa
ELEC 3908, Physical Electronics, Lecture 4
Basic Integrated Circuit
Processing
Lecture Outline
Details of the physical structure of devices will be very
important in developing models for electrical behavior
Device structure is better understood by foll
ELEC 3908, Physical Electronics, Lecture 19
BJT Base Resistance
and Small Signal Modelling
Lecture Outline
Lecture 17 derived static (dc) injection model to predict dc
currents from terminal voltages
This lecture begins by considering the resistance ass
ELEC 3908, Physical Electronics, Lecture 7
Generation, Recombination
and Diffusion
Lecture Outline
Have described structure and processing of diode as well
as important doping and area related effects
Now want to derive the basic static (dc) model for d
ELEC 3908, Physical Electronics, Lecture 8
Diode Operation
Lecture Outline
Have looked at basic diode processing and structures
Goal is now to understand and model the behavior of the
device under bias
First consider the carrier exchange and interactio
ELEC 3908, Physical Electronics, Lecture 9
Depletion Region GR and
Parasitic Resistance
Lecture Outline
Last lecture covered diode operation and derivation of
ideal diode equation
Now address two important effects not included so far
Generation and rec
Lab #2 BJT
ELEC3908
Andi Huang
100939484
Partner: Alex Vierich
Nov 9, 2016
2.3.1 EbersMoll Parameters of BC Junction
Andi Huang, 100939484, BJT
Figure 1:Ln(Ic) and Vc plot for BC junction of BJT
2.3.2 EbersMoll Parameters of BE Junction
Andi Huang, 1009
Name: _
Student Number: _
CARLETON UNIVERSITY
SELECTED FINAL EXAMINATION QUESTIONS
DURATION: 6 HOURS
N
Department Name & Course Number: ELEC 3908
Course Instructors: S. P. McGarry
Authorized Memoranda: Nonprogrammable calculators NO BOOKS OR NOTES
Studen
Equations
Ideal Diode
with depletion region GR:
ID
with series resistance & GR:
ID
ShockleyReedHall:
(
= I (e
= I (e (
I D = I S eqVD
S
S
kT
)
1)
1
qVD nkT
q VDx I D Rs ) nkT
n(x ) p (x )
U=
)
1 where VDx = VD + I D Rs
ni2
Einstein Relations:
0 (n(x
Name:_
Student Number:_
ELEC 3908 Physical Electronics
Final
Practice Problem Set
? Minutes
Dec. 7, 2016

No aids except a nonprogrammable calculator
All questions must be answered
All questions have equal weight
Answer questions on quiz sheets (use bac
150 l Problems
Chapter 6 Problems
Problem 61. The reverse bias characteristic of a test structure diode with area A m : 100x100 urn2
is measured, leading to a saturation current 13, = 10 pA. A diode from this process is required to
conduct a current of
148 l
Problems
Chapter 5 Problems
Problem 51. A three terminal epitaxial diode structure crosssection is shown below.
a) What is the equivalent circuit between nodes 1, 2
and 3?
b) Can both the n+ diffusions be formed in one step?
Why or why not?
c) If
ELEC 3908 Course Pack 1 153
Chapter 8 Problems
Problem 81. A p+n junction is operated in forward bias. The minority hole distribution in the long a
type material is given by pn(x) = pm(1+ 71pr (qunlkT 71), where the xaxis has been dened so
that x = 0
152 l
Problems
Chapter 7 Problems
Problem 71. A sample of ntype silicon undergoes a disturbance that raises both in and p. Assume that
only recombination acts to lower the densities, and that the disturbance can be considered low level
injection. The min
146 l
Problems
Chapter 3 Problems
Problem 31. To a reasonable approximation, the intrinsic density n, can be written as a function of
temperature and energy gap as ni(Eg,T)= CeizdmT , where C is a constant. Use this equation for the
questions in parts