ECE 162A HW 5 Due Tuesday, Nov. 13, 2007 1. Separable Potentials (a) What is the condition on the 3D potential V(x,y,z) for the SWE to be separable into three equations in the three components x, y and z? (b) Classify the following potentials into s
ECE 162A HW 7 Due in Class Tuesday, Nov. 27
1. Distinguishable and Indistinguishable Particles: Counting Consider a system with 5 distinct energy levels and four particles. In how many ways can the 4 particles be made to occupy the 5 energy levels if
ECE 162B Homework #2
BONDING IN SOLID STATE
Due January 27, 2016 in class to TA
_
Read Chapter 5 in Solymar and Walsh
Do the following problem from Solymar and Walsh # 5.1, 5.3, 5.4, and 5.7
S. DenBaars, Winter 2016, ECE/MAT 162B
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Previously
1. Derived double slit diffraction, introduced quantum weirdness of single photon and
electron interfering with itself
2. Discussed J.J. Thompsons discovery of electron. Charge is quantized
3. Used dimensional analysis to derive approx. size of
Previously
1. Discussed difference between wave/phase velocity and group velocity
2.Built up the Schrodinger equation from dispersion relations of particles
(write eqtns on board)
Today
Solve Shrodinger eqtn for particles in confining potentials
Examples
HW #1
(due 10/08 by 5pm)
1. F&T # 1.8
2. F&T # 1.9
3. F&T #2. 5
4. F&T #2.7
5. F&T #2.10
6. Dimensional Analysis
The gravitational force between two objects of mass ! and ! separated by a distance r
HW #2
(due 10/16 by 5pm)
1. Photons in a bulk metal or in a microwave waveguide near cutoff obey the dispersion relation
=
=
1
!
!
!
for > ! :
a) What is the phase velocity? How does it compare to the spee
HW #3
(due 10/30, by 5 pm)
1. The Hermite polynomials can be derived from the rule ! = 2
!
!"
!
1
a) Use this rule to derive ! () and ! ()
b) Show that ! () is a solution to the differential equation we deri
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ECE l62llii Homework #3 FREE ELECTRON THEORY 
Dine February 3, 2916 in 638153 g4 9k 3 /c/ / 1571 S 7%
Read Chapter 6 in Solymar and Walsh
(1.) Assume that an ideal Schottky barrier is formed with Aluminum on ntype Si having a
degenerate doping of Nd= 1E
ECE 162A, Fall 2007 HW 8 Due: Thursday, 6th December
1. It can be shown that the conduction and valence bandedges of an AlGaAsGaAsAlGaAs quantum well structure can be modeled as a finite potential well as shown in the figure below. The GaAs quantu
ECE 162A, Fall 2007 HW 6 Due: Tuesday, 20th November 1. In the hydrogen atom, what quantum number(s) decide(s) (i) the radial component of the wavefunction? (ii) the angular component of the wavefunction? 2. Consider an electron in the n=4 state of
HW #3
(due 10/31, by 2 pm)
1. The Hermite polynomials can be derived from the rule
a) Use this rule to derive
b) Show that
(
H n ( x )= 2 x
n
d
1
dx
)
H 3 (x) and H 4 (x )
H 3 ( x) is a solution to the differential equation we derived in class:
2
H n ( x
ECE 162B Homework #3
FREE ELECTRON THEORY
Due February 3, 2016 in class
_
Read Chapter 6 in Solymar and Walsh
(1.)
Assume that an ideal Schottky barrier is formed with Aluminum on ntype Si having a
degenerate doping of Nd= 1E+19 cm3.(i.e. Fermi level li
ECE/MAT 162B Homework #4
BAND THEORY of SEMICONDUCTORS
Due February 10, 2016 in class
_
Read Chapter 7 in Solymar and Walsh
(1.2.) Problems from Solymar and Walsh, # 7.2, 7.3
(3.) Using the KroningPenney model show that for P<1, the energy of the lowest
ECE/MAT 162B PRACTICE MIDTERM
Intro to Solid State Physics
ECE MAT 162B
OPEN BOOK OPEN NOTES (NO INTERENT OR SMARTPHONE USE)
There are 4 problems and you have 1hour and 15minutes good luck!
2)
Assume that an ideal Schottky barrier is formed with Aluminum
ECE 162B/MAT 162B Homework #1
CRYSTAL STRUCTURES
Due January 13, 2016 in class
Read Handout one/Chapter One in Kittel, Introduction to Solid State Physics and answer the following
questions.
1. Crystal Structure: GaN is a semiconductor widely used in LED
HW 1 Solutions
ECE 162B
Winter 16
Asad Mughal
1.1 GaN crystal structure
hexagonal crystal system
GaN
N
Ga
GaN Crystal Structure
1.2 GaN (2021) Plane
c
(2021) (1/a1, 1/a2, 1/a3, 1/c)
Intercepts:
a1 =
a2 = 0
a3 = 
c=1
a3
a2
a1
1.3 Mass Density of GaN
=
c
ECE 162B Homework #5
SEMICONDUCTOR PROPERTIES and DEVICES
Due Feb 22, 2016 to TA by email or TA office
_
Read Chapter 8 and 9 in Solymar and Walsh
(12) Do Problem 8.7 and 8.9 in Solymar and Walsh
3) A Si step junction maintained at room temperature under