Part # Quantity Variety of Capacitors (nano and micro ) Varitey of resistors opamp 741 5 Diode 1N400 series 5 Bipolar Trans 2N2222 6 MOS Trans IC CD4007 6 Variety of POTS (1k, 10k, 100k)2 each Breadboard 1 Alligator clips, BNC, wires enough meters, scopes
Lab#1: Uses of Test Instruments Digital Multimeter and Oscilloscope
Submitted by:
Date of performance: February 8, 2016
Date of submission: February 13, 2016
A. Itroduction:
B. Equipment:
1. Digital Multimeter(DMM)
2. Oscilloscope
3. DC Volatge Supply
4.
EE330 Analog Electronics Laboratory
Spring 2016
Instructor-
Experiment #5- MOSFET Characteristics
Date: 4/3/2016
A. Introduction:
In this experiment, we will be able to:
Draw the circuit diagram and cross-section structure of the CD4007 integrated circuit
California State University, Long Beach
EE 330 Analog Electronics Laboratory
Spring 2009
InstructorExperiment #6
Introduction
In this lab, we used a bipolar junction transistor and how they behave in a circuit
operating in the common-base configuration as
Foundation of Circuit Analysis:
Linearity is the most important concept in circuit analysis that will simplify our work. Linear systems obey the superposition rule. If the I-O of a given system lies on a line, then the output to any input is predictable.
EE 330 Diodes, Chapter 3 Sedra and Smith
All matters in nature have electrical properties: Groups: Conductors: Most metals (aluminum, copper.) some ceramics show superconductivity at low temp Insulators: Plastic, and most ceramics Semiconductors: Silicon
EE330 Lecture # 2- continued: Donor: A doped semiconductor with extra electrons. (n type) Acceptor: A doped semiconductor with extra holes (p type) Important phenomenon at the graded junciton (p-n) : Diffusion, Drift During diffusion the concentration of
Diode symbol:
+ -
Ideal Model:
Reverse
Forward
Study of Diodes shows that the mathematical model best suited for the study of diode is:
v / nV FB: i = I s (e T 1)
RB: i = I s
saturation current proportional to cross section area ~ 10-15A
Where VT = kT / q
Diodes Problem Solving:
Review
1. 2. 3. 4. Diode is a nonlinear device Forward bias - current flows Reverse bias - current blocked Appropriate models: Battery or Battery and Resistor
Approach
1. 2. 3. 4. Assume all diodes are reversed biased (open circuit
The MOSFET
p channel n channel
Physics
of the device
v B (body or substrate) is the lowest voltage in the circuit (we will also assume that v B = v S ). With v GS =0 and v D > v B , v S > v B , the transistor internally has two reverse-biased junction
How to approach DC bias MOSFET problem solving:
1. 2. 3. 4. 5. 6. 7. If not obvious, assume transistor is saturated. (80% of the time it is.) Compute VG Remember IG =0. Write a loop equation thru source. Solve the quadratic equation. Check for VGS that is
Derivation of I-V relationship for a MOSFET: Ex. Adding a thin layer of P+ alters the threshold. If VDS =0, Qd =WCox(VGS-Vth) Total capacitance per unit length. If VDS >0 small: Qd(x) =WCox(VGS-V(x)-Vth) where V(x) is the channel potential at x. Also I =
EE330 Analog Electronics Laboratory
Spring 2016
Instructor-
Experiment #5- MOSFET Characteristics
Date: 4/3/2016
A. Introduction:
In this experiment, we will be able to:
Draw the circuit diagram and cross-section structure of the CD4007 integrated circuit