EE301
Lab#1 - Xilinx ISE tutorial
In this tutorial, you will learn how to use the Xilinx ISE software to code a 2-to-4 decoder in VHDL and simulate it. After
that, you will transfer the code to the Nexys2 FPGA board and test it on the board.
The following
EE330
Handout 3
Prepared by Dr. Fei Wang
Rectifier Circuits
Basic rectifier converts an ac voltage to a pulsating dc voltage.
A filter then eliminates ac components of the waveform to
produce a nearly constant dc voltage output.
Rectifier circuits are
Handout 4
Field-Effect Transistors
Dr. Fei Wang
Types of Field-Effect Transistors
MOSFET (Metal-Oxide Semiconductor FieldEffect Transistor)
Primary componenet in high-density VLSI chips
such as memories and microprocessors
JFET (Junction Field-Effect T
EE330
Handout 2
Prepared by Dr. Fei Wang
1
Lecture summary
Understand diode structure and basic layout
Develop electrostatics of the pn junction
Explore various diode models including the
mathematical model, the ideal diode model, and the
constant volt
Handout 6
Small-Signal Modeling and Linear Amplification
Fei Wang
Introduction to Amplifiers
BJT is an excellent amplifier when biased in forward-active region
FET can be used as amplifier if operated in pinch-off or saturation
region.
In these regions
EE 330Handout - 1
Prepared by Dr. Fei Wang
1
Course Introduction
EE 330 is first device level course in EE.
(some semiconductor physics content)
Non-linear components (Diodes, MOSFET
and BJT)
- You learned circuits composed by passive components
in EE21
Lab # 5 EE330
Report is due on May 7th at 4:45pm. No late submissions are accepted.
Theory: Differential amplifiers are used to provide voltage gain for differential signals on the inputs, Vd V1 V2,
while attenuating interfering common-mode signals. Diffe
Lab # 4
Common-Emitter BJT Amplifier
Due date is April 16th @ 2 pm
This is a design project. That means you choose the values of resistors according to
the gain that you intend to get. Theoretical calculations must be accompanied to
compare the results of
Lab Project # 2 - Study of Diodes
Due Date: February 26th by 3:30 pm
The objective of this lab is to:
a. Obtain the I/O curve of the diode,
b. Estimate the incremental resistance r and saturation current Is of a pn
junction,
c. Observe the rectification e
Lab # 5 EE330
Report is due on 18th.
Simulation and theoretical work only due to time constrains.
Theory: Differential amplifiers are used to provide voltage gain for differential signals on the inputs, Vd V1 V2,
while attenuating interfering common-mode
Conclusion:
In this lab, the differential amplifier was examined. When it comes to the differential amplifier, the
following was observed:
The effects that the differential gain and common mode gain have on the common mode
rejection ratio (CMRR).
The diff
Lab #3
MOSFET Transistor Characteristic Curves and Bias Point
California State of Long Beach
College of Engineering: Fall 2015
Jeremiah Trimper
Ridwan Maassarani
Taylor Nelson
Maryam Moussavi, Ph.D.
EE 330 Sec 9185 M 7 -9:45 PM
November 2, 2015
Abstract:
EE 330 Lab Report 4
California State University, Long Beach
College of Engineering: Fall 2015
Jeremiah Trimper
Ridwan Maassarani
Taylor Nelson
Maryam Moussavi, Ph.D.
EE 330 Sec 9185 M 7 -9:45 PM
Lab 4: Common-Emitter BJT Amplifier
December 2, 2015
1
EE 33
4
Techniques of Circuit Analysis
Assessment Problems
AP 4.1 [a] Redraw the circuit, labeling the reference node and the two node voltages:
The two node voltage equations are
v1
v1 v1 v2
15 +
+
+
= 0
60 15
5
v2 v2 v1
+
= 0
5+
2
5
Place
in standard
these e
/*Lab2.asm - Show a room
* Version 4.15
* Writtten By : Chanh Tran
* Date : 9-25-2015
* ID # : 013283840
* Lab Hours : Friday 4PM
*/
.INCLUDE <m328pdef.inc>
.CSEG
.ORG 0x0000
RST_VECT:
rjmp Reset /jump over the IVT, table and include file
.ORG 0
EE 301
Lab#3: Universal Shift Register
In this lab, you will design a 4-bit universal shift register that can perform right shift, left
shift, and parallel loading. The following is the block diagram of the register:
P(3:0) - Parallel inputs
Serial_in - S
Lab Report Requirements
All lab projects are based on the design procedure adopted in the industry:
From theory to simulation to experiment.
All projects have a theoretical part to be completed. After that a simulation
of the problem with Orcad is used to
Handout 5
Bipolar Junction Transistors
Fei Wang
Physical Structure
Consists of 3 alternating layers of n- and
p-type semiconductor called emitter (E),
base (B) and collector (C).
Majority of current enters collector,
crosses base region and exits through