Page 1 of 2
Bo
gazi
ci University
Electric-Electronics Engineering Department
EE 430: Solid-State Electronics (Reloaded)
Spring 2017
Homework Assignment #3:
Issued:
Due:
Submission:
March 7, 2017
March 14, 2017
March 21, 2017
1. Problem: On Carrier Densit
Page 1 of 1
Bo
gazici University
Electric-Electronics Engineering Department
EE 430: Solid-State Electronics (Reloaded)
Spring 2017
Homework Assignment #3:
Issued:
Due:
Submission:
March 28, 2017
April 4, 2017
April 11, 2017
1. Problem 1: A silicon step j
Page 1 of 2
Bo
gazi
ci University
Electric-Electronics Engineering Department
EE 430: Solid-State Electronics (Reloaded)
Spring 2017
Homework Assignment #1:
Issued:
Due:
Submission:
February 9, 2017
February 16, 2017
February 21, 2017
1. Problem:
An elect
Page 1 of 2
Bo
gazi
ci University
Electric-Electronics Engineering Department
EE 430: Solid-State Electronics (Reloaded)
Spring 2017
Homework Assignment #2:
Issued:
Due:
Submission:
February 28, 2017
March 7, 2017
March 14, 2017
1. Problem: Density of Sta
Page 1 of 1
Bo
gazi
ci University
Electric-Electronics Engineering Department
EE 430: Solid-State Electronics (Reloaded)
Spring 2017
Homework Assignment #5:
Issued:
Due:
Corrections:
April 11, 2017
April 18, 2017
April 25, 2017
Problem 1: Problem 16.7 fr
IE 202 HW-4
Deadline: May 2, Tuesday, 17:00
1. A set of experimental runs was made to determine a way of predicting cooking time at various
values of oven width and flue temperature. The coded data were recorded as follows:
Cooking time
6.40
15.05
18.75
3
11/05/14
Lasers*
Phys 3232 Optics-I
Georgia Tech
Stimulated Emission
Gain
Inversion
The Laser
Four-level System
Threshold
Some lasers
* Light Amplification by Stimulated Emission of Radiation
Stimulated emission leads to a chain
reaction and laser emissio
09/02/17
Hamdi Torun
[email protected]
Huygens: wave theory
Why is the sky blue?
Why do soap bubbles have color?
Why do windows have dierent characterisCcs
of reecCon?
Why do lasers travel long distances?
White light is a combinaCon o
07/04/14
EE 461: Op,cal System Design
Week5: Superposi,on of Waves
Superposi,on principle
Wave equa,on is linear w.r.t. ,me and posi,on
Let i is a solu,on, then any linear combina,on
is also a solu,on where Cis
1)
a. Doping electrons are the dominant carriers at the emitter region while base regions dominant carriers
are doping holes. Between base and emitter, there are both electron and hole concentration difference.
Since, while electrons flow from emitter to
1) - In emitter, dominant carriers are electrons. In base, dominant carriers are holes. The dominant
carriers in collector are also electrons. While electrons go to base from emitter, holes go from base to
emitter. The transfer mechanism between base and
1) BJT has high voltage gain, low current gain, low input impedance, low output impedance while
FET has low voltage gain, high current gain, very high input impedance, high output impedance. Also
BJT's are harder to scale while FETs are easy. FETs are sym
1)
a. Doping electrons are the dominant carriers at the emitter region while base regions dominant carriers
are doping holes. Between base and emitter, there are both electron and hole concentration difference.
Since, while electrons flow from emitter to
1) First of all FETs are symmetric devices. BJTs are not symmetric. FETs have higher input
and output resistance than BJTs have. FETs also have higher intrinsic gain. BJTs have high voltage
gain and low current gain, but FETs have low voltage gain and hig
1) The holes in the p-type flows into the intrinsic part and recombine with the electrons in this part. Also the electrons
in the intrinsic part flows into p-type and recombine with the holes in this part. Between two junction, depletion region
is formed.
1.This junction still behave like a pn junction diode. A depletion region is observed in this
junction, too. The p type region behaves in the same way with pn junction model and intrinsic part
behaves like the n type in pn junction model. However, the ele
1)
a) If there is no internal connection, MOS transistors are symmetric, in other words, source
and drain can be used interchangeably. The applied voltage determines which part is source or drain.
We can understand it from the direction of the current.
b)
The Z-transform can be defined as either a one-sided or two-sided
transform.[7]
Bilateral Z-transform[edit]
The bilateral or two-sided Z-transform of a discrete-time signal x[n] is the
formal power series X(z) defined as
where A is the magnitude of z, j i
Two integrable functions have the same Laplace transform only if they
differ on a set of Lebesgue measure zero. This means that, on the range of
the transform, there is an inverse transform. In fact, besides integrable
functions, the Laplace transform is
In other words, the Hermite functions form a complete orthonormal system
of eigenfunctions for the Fourier transform on L2().[12] However, this choice
of eigenfunctions is not unique. There are only four different eigenvalues of
the Fourier transform (1 a
Generally speaking, the more concentrated f(x) is, the more spread out its
Fourier transform f()
must be. In particular, the scaling property of the
Fourier transform may be seen as saying: if we squeeze a function in x, its
Fourier transform stretches ou