ECE 340  Electrical Engineering Fundamentals
Course Syllabus
SPRING 2013
Instructor: James Flynn
Office: JD1536 (Comm Lab)
Office Hours: Tu 10A11A or W 1P2P or by appointment.
Email: [email protected]
ECE 340 Electronics I
Solution to Homework #8
1. Performing the DC analysis of this circuit we find that IDQ = 2 mA, resulting in gm = 4 mA/V
and ro = 50K. At low frequency replace the MOSFET with its
ECE 340 Electronics I
Solutions to Homework #1
1. R1 = 20 K ; Rf = 1 M using the standard inverting amplifier configuration
2. one possible answer is R1 = 10 K, Rf = 490 K using the noninverting ampl
ECE 340 Electronics I
Homework #8
1. Sketch the Bode plot for the circuit shown below and find the low and high frequency 3dB
points. Assume Kn = 2 mA/V2, VTN = 1V, = 0.01, Cgs = 5 pF and Cgd = 1 pF.
ECE 340 Electronics I
Homework #9
1. For the common gate amplifier shown below, sketch the Bode plot of the voltage gain. Find
the low and high frequency 3 dB points. Assume VTN = 1V, Kn = 3mA/V2, = 0
ECE 340 Electronics I
Solutions to Homework #2
1. a. When the input waveform is positive, the dioderesistor branch is reverse biased and the
diode is open. Thus, there is no current through the resis
ECE 340  Electronics I
Solutions to Homework #4
1. Transistor 1: BE is reverse => cutoff
Transistor 2: BE is forward, CB is reverse =>active
Transistor 3: BE is forward, CB is forward => saturation
2
ECE 340 Electronics I
Homework #6
1. For the circuit shown below, determine whether the MOSFET is in the cutoff, triode, or
saturation region. For cutoff or saturation, determine IDQ and VDSQ. Assume
ECE 340 Electronics I
Solutions to Homework #3
1. a. Short circuiting the voltage course the Thevenin resistance is:
Rth = 100  150 + 140 = 200!
Voc is the voltage across the 150. Using voltage divis
ECE 340  Electronics I
Solutions to Homework #5
1. DC Analysis replacing the capacitors with open circuits:
! RE = (50)(2200) = 110K > 10K
10
VB =
(24) = 4 " VE = 3.3 " I E = I c = 1.5mA (active)
60
ECE 340 Electronics I
Homework #10
1. Find the Q point for each MOSFET (IDQ and VDSQ) in the circuit shown below and determine
which region each device is operating in. Assume that Kn1 = 0.1 mA/V2, VT
ECE 340 Electronics I
Solution to Homework #7
1. Setting VDD to ground, replacing the capacitors with short circuits and replacing the
MOSFET with its AC model:
Since the gate is open: Zi = 200K  100
ECE 340 SPRING 12
HOMEWORK 4
1) In the circuit below select the values for the power supply and all unknown resistors so the circuit has
a Qpoint of Vc = 8V, Ic = 2mA. The amplifier should have a volt
ECE 340 SPRING 12
Homework 3
1)
R2
100K
R1
4.7K
V1
10V
Q1
Q2N3904
In the circuit above you measure the following voltages:
Vbe = 0.6v
Vce= 0.2V
What state is the transistor in? Cutoff, saturation, or
ECE 340 SPRING 2012 HOMEWORK 2
1) Use the ideal diode model and sketch the output of this circuit, vo, for the sawtooth input. Identify all
significant voltages. I.e. peak voltage point, minimum volta
ECE 340 Homework 1
1. Using two standard value 5 per cent, 1/8 watt resistors, design a voltage divider that has 10 volts D.C.
as an input and 1 volt D.C. as an output. Design the divider to have the
CALIFORNIA STATE UNIVERSITY, NORTHRIDGE
DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING
ECE 340
ELECTRONICS I
SPRING 2012
MIDTERM EXAMINATION 2
Name_
Problem One (25 points)
+5V
3.1k
30k
vo
50
10uF
ECE 340 Electronics I
Homework #7
1. Find Av, Zi, and Zo for the circuit shown below. Assume gm = 1 mA/V and ro = 50K.
VDD
200K1
10K
1
10K1
+
+
V
i
100K1
Vo 20K
1
1K1


Zo
Zi
2. Find Av, Zi, and Zo
ECE 340 Electronics I
Solutions to Homework #9
1. Using the results of Homework #8, problem 4, we know that the midband voltage gain is 4.7
or 13.4dB. The input capacitor sees a resistance equivalent