Homework 2: Introduction to Semiconductors (II)
1. (Carriers in compensational doping) (22 pts)
For a semiconductor piece with both ND=1017cm-3 and NA=1016cm-3 everywhere in
equilibrium, we have ni=1.51010cm-3 at T=300K. The approximate electron
mobility
Anh Nguyen
Masters student at National Chiao Tung University
[email protected]
Education
National Chiao Tung University, Taiwan
Master's degree, EECS, 2017
Vietnam National University, Vietnam
Bachelor's degree, Physics, 2010 - 2014
Grade: Distinction G
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5001 Graduate Seminar
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Chapter 1
Introduction to Semiconductors
Electronic properties of solid state materials
Semiconductors in equilibrium: band
diagram and statistics
Semiconductors under perturbation: carrier
transport, generation, and recombination
* Majority of these n
Textbook:
Y. Taur and T. H. Ning, Fundamentals of Modern VLSI
Devices, Cambridge (2009)
Reference Books:
S. M. Sze, and Kwok K. Ng, Physics of Semiconductor
Devices, 3rd Ed, Wiley (2007)
R. F. Pierret, Advanced Semiconductor Fundamentals, vol. 6, 2nd
E
Homework 2: Introduction to Semiconductors (II)
1.
(Carriers in compensational doping)
For a semiconductor piece with both ND=1017cm-3 and NA=1016cm-3 everywhere in
equilibrium, we have ni=1.51010cm-3 at T=300K. The approximate electron mobility
n=1200cm2
Semiconductor Physics and Device (I) Prelim 1 (120 Minutes)
Spring 2015
Rules of the exam
Close book exam. Calculators are allowed.
Equation Sheet:
Fermi function:
f (E) =
1
1 + e ( E EF ) / k B T
At equilibrium, the nondegerate extrinsic semiconductor: n
Homework 3: PN Junction Theory
1. (Ideal diode current calculations)
For a n+-p abrupt junction diode with N D =1020cm-3 and N A =1017cm-3 at 300K, the
minority recombination lifetime n =10-6s, p =400cm2/Vs, and n =800cm2/Vs, the cross
section of A=1m2.
(
Homework 3: PN Junction Theory
1. (Ideal diode current calculations) (35 pts)
For a n+-p abrupt junction diode with N D =1020cm-3 and N A =1016cm-3 at 300K, the
minority recombination lifetime n =10-5s, p =400cm2/Vs, and n =800cm2/Vs, the cross
section of
Homework 1: Introduction to Semiconductors (I)
1.
(Si Crystalline Structure)
(a) A silicon FCC cell has edge of 0.543nm, containing 8 Si atoms.
Calculate the
atomic density in atom/cm3 and the mass density in g/cm3 with atomic weight of 28.
Notice that th