Homework 2: Introduction to Semiconductors (II)
(Due on 03/29 in Class)
1. (Average kinetic energy of electrons at conduction band) (30pts)
(a) Establish a general expression (involving integrals) for the average kinetic
energy, <K.E.>, of the conduction
Homework 5: Schottky Junction Theory
(Due on 05/03 in Class)
1. (Schottky diode band diagram practice)
(a) For Pt (with an ideal work function of 5.9) on top of a p-type Si with NA=1017cm-3. Draw the
band diagram in equilibrium. Is the contact rectifying
1.
Homework 4: PN Junction Theory
(Due on 4/19 in Class)
(Ideal diode current calculations) (18 pts)
Use the n+-p silicon diode in Prob. 4 with cross section of A=1m2, perform the diode
current calculation in the following conditions:
(a) T=300K in the lo
Semiconductor Physics and Device (I) Final
(120 Minutes)
Spring 2012
Rules of the exam
Close book exam. Calculators are allowed.
Equation Sheet:
At equilibrium, the nondegerate extrinsic semiconductor: n=ni exp(EF-Ei)/kT); p=ni exp(Ei-EF)/kT),
np=ni2=NCN
Homework 7: MOSC & MOSFET Theory
(Due on 6/7 in Class)
1. (High-k dielectrics in MOSC) We will consider putting different insulators in the gate dielectric now.
This is an important direction in logic and memory CMOS technology. We will practice two of th
Homework 3: Introduction to Semiconductors (III)
(Due on 04/05 in Class)
1. (Potential Curvature, Debye Length and Diffusion Length) (15 pts)
For a p-type extrinsic Si with the acceptor doping NA=21017cm-3, the minority mobility
n=750cm2/Vs, the majority
Homework 8: Long-channel and short-channel MOSFET
(Need not turn in)
1. (Where goes that m?) We will repeat the nMOSFET IV above-threshold derivation in
Microelectronics here, and see why there is no m in the simple expression.
(a) We will start with a ch
Semiconductor Physics and Device (I) Prelim II
(120 Minutes)
Spring 2012
Rules of the exam
Close book exam. Calculators are allowed.
Equation Sheet:
At equilibrium, the nondegerate extrinsic semiconductor: n=ni exp(EF-Ei)/kT); p=ni exp(Ei-EF)/kT),
np=ni2
Homework 6: MOSC Theory
(Due on 05/15 in Class)
1. (MOSC CV) For a Si MOSC with homogeneous substrate doping of NA= 1017cm-3 and tox=10nm,
(a) Calculate the depletion region width at the onset of strong inversion. (5 pts)
(b) Calculate the total capacitan
Semiconductor Physics and Device (I) Prelim 1 (120 Minutes)
Spring 2012
Rules of the exam
Close book exam. Calculators are allowed.
Equation Sheet:
At equilibrium, the nondegerate extrinsic semiconductor: n=ni exp(EF-Ei)/kT); p=ni exp(Ei-EF)/kT),
np=ni2=N
Homework 1: Introduction to Semiconductors (I)
(Due on 03/22 in Class)
1. (Si Crystalline structure) (30 pts)
(a) A silicon FCC cell has edge of 0.543nm, containing 8 Si atoms. Calculate
the atomic density in atom/cm3 and the mass density in g/cm3 with at
Chap 5. Carrier Motion
Carrier Drift
Carrier Diffusion
Graded Impurity Distribution
Hall Effect
Homework
Solid-State
1
Instructor: Pei-Wen
Carrier Drift
When an E-field (force) applied to a semiconductor, electrons and holes
will experience a net acceler
Part IV M-S Contact and Heterojunction
1.
2.
3.
4.
5.
6.
IV - 1
Energy Band relation
Schottky effect
Current transport processes
Characterization of barrier height
M-S Ohmic contact
Heterojunctions
NCTU Display Institute H. W. Zan
Schottky Barrier Energy
Chap 2. Introduction to Quantum Mechanics
Principles of Quantum Mechanics
Schrdingers Wave Equation
Application of Schrdingers Wave Equation
Homework
Solid-State Electronics
Chap. 2
1
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Introduction
In solids,
Chap 6. Nonequilibrium Excess Carriers in Semicon
ductor
Carrier Generation and Recombination
Continuity Equation
Ambipolar Transport
Quasi-Fermi Energy Levels
Excess-Carrier Lifertime
Surface Effects
Solid-State
1
Instructor: Pei-Wen
Nonequilibrium
When
Chap 4. Semiconductor in Equilibrium
Carriers in Semiconductors
Dopant Atoms and Energy Levels
Extrinsic Semiconductor
Statistics of Donors and Acceptors
Charge Neutrality
Position of Fermi Energy
Solid-State Electronics
Chap. 4
1
Instructor: Pei-We
Chap 3. Introduction to Quantum Theory of
Solids
Allowed and Forbidden Energy Bands
k-space Diagrams
Electrical Conduction in Solids
Density of State Functions
Statistical Mechanics
Homework
Solid-State
1
Instructor: Pei-Wen L
Preview
Recall from t
Solid-State Electronics
Textbook:
Semiconductor Physics and Devices
By Donald A. Neamen,
Reference:
Advanced Semiconductor Fundamentals
By Robert F. Pierret 1987
Fundamentals of Solid-State Electronics
By C.-T. Sah, World Scientific, 1994
Homework: 0%
P
Part III P-N junction diode
1.
2.
3.
4.
III - 1
thermal equilibrium condition
C-V characteristics
I-V characteristics
non-ideal effects
NCTU Display Institute H. W. Zan
thermal equilibrium condition
- P-N junction concept
III - 2
E F Ec
n N c exp(
)
kT
E
Part II Basic carrier transport phenomenon
1.
2.
3.
4.
II - 1
carrier drift
carrier diffusion
generation and recombination
continuity equation
NCTU Display Institute, H. W. Zan
Concept of carrier mobility
random thermal motion
II - 2
with an applied elect
The Physics of Optoelectronic Devices Homework #2
Electronic structure and the Semiconductor in Equilibrium
2.1
(a)
For periods=20, there are 20 energy levels for each band. As the energy level gets higher, the band
The Physics of Optoelectronic Devices
HW4: Excess carrier behaviors and design of optoelectronic devices
Due: June 19, 2015
4.1 (20%) Continuity Equation
The two ends of a uniformly doped n-type Si bar of length L are simultaneously illuminated so as to
c
The Physics of Optoelectronic Devices
HW2: Electronic structure and the Semiconductor in Equilibrium
Due: April 15, 2016
2.1 (20%) Study the Matlab script of the Kronig-Penny model shown in the Appendix. The model depicts a 1-D
crystal with a finite span
The Physics of Optoelectronic Devices HW1: The Crystal Structure
of Solids Due: March 27, 2015
1.1 A crystal is composed of two elements, A and B. The basic
crystal structure is a face-centered cubic with element A at each of
the corners and element B in
The Physics of Optoelectronic Devices
HW4: Carrier Transport Phenomena and PN Junction
Due: June 9, 2016
4.1 (20%) Generation and Recombination of Carriers
Assume that the energy level associated with defects within a Si sample is near midgap (i.e. ET Ei
The Physics of Optoelectronic Devices
HW3: The Semiconductor in Equilibrium and Carrier Transport Phenomena
Due: May 19, 2016
3.1 (10%) A Hall effect device has been fabricated on a GaAs sample at T=300 K with the following
geometry: d=0.01 cm, W=0.08 cm,
The Physics of Optoelectronic Devices
HW3: The Semiconductor in Equilibrium and Carrier Transport Phenomena
Due: May 15, 2015
3.1 (15%) Silicon can serve as an ambipolar dopant for GaAs. Consider the case that 7 1015cm -3 silicon
atoms are added to GaAs a
The Physics of Optoelectronic Devices
HW2: Introduction to the Quantum Theory of Solids
Due: April 24, 2015
1.1 Study the Matlab script in the Appendix. Make sure to understand each command by playing the script
and observing its output. Write down all yo
The Physics of Optoelectronic Devices Homework #1
06 0210533
1.1 [Ans]
1
=2 10 6 cm 3
3
d
6
d=3.684 10 cm=368.4
When a=5.4307 , d=67.84 a
Volume density
1.2 [Ans]
a. Silicon crystal
b.
(i ) (1/2, 0, 1/2) ; (0, 0, 1) ; (1, 1, 1) Miller indices (2 2 2)