EE3114 EXPERIMENT 2 Circuit Applications of Semiconductor Diodes
I. Introduction
Semiconductor junction diodes find numerous applications in electronic circuits. The large asymmetry in forward and reverse current-voltage characteristics explored in the pr
EE3114
Hwk #2 Diodes
PROBLEMS Due 1 week
Read textbook chapter sections 1.4, 1.5 and chapter 2.0 1) Diode DC Analysis: for the following circuits, plot the transfer characteristics of Vo (yaxis) versus Ii (x-axis) and ID (y-axis) versus Ii (x-axis). Use 0
EE3114
Hwk #0 PSpice Simulation
Due 1 week
1) DC Only: Run a PSpice simulation of the following voltage divider. Submit a schematic showing the DC voltage and DC current flowing through the R2 resistor. The voltage and current can also be shown as a table
Analog Integrated Circuits and Signal Processing, 16, 299304 (1998)
# 1998 Kluwer Academic Publishers, Boston. Manufactured in The Netherlands.
Prediction of the Harmonic Distortion in Mosfet Gate Capacitors
MUHAMMAD TAHER ABUELMA'ATTI
King Fahd Universit
Analog Integrated Circuits and Signal Processing 5, 175-181 (1994)
1994 Kluwer Academic Publishers, Boston. Manufactured in The Netherlands.
An Improved Analysis for the Nonlinear Performance
o f Body-Driven Analog MOSFET Circuits
M UHAMMAD TAHER ABUELMA
Harmonic Distortion in Electronic Ampliers
Hayden McCabe : 0750372
March 19, 2010
1
Small signal analysis using Taylor series
In the analysis of ampliers made from non-linear devices, such as transistors,
the assumption that a device behaves linearly for
POLYTECHNIC UNIVERSITY-BROOKLYN
Department of Electrical Engineering
Experiment 3: Circuit Applications of Semiconductor Diodes
Date Experiment Performed: Mar. 9, 2007
Date Report Submitted: Mar. 30, 2007
Pratik Mathur & Brendan Jou
Lab Section: A2
POLYTE
POLYTECHNIC UNIVERSITY-BROOKLYN
Department of Electrical Engineering
Experiment 4: Biasing of a Transistor Inverter Stage
Date Experiment Performed: Mar. 16, 2007
Date Report Submitted: Mar. 30, 2007
Pratik Mathur & Brendan Jou
Lab Section: A2
POLYTECHNIC
POLYTECHNIC UNIVERSITY-BROOKLYN
Department of Electrical Engineering
Experiment 5: Large Signal Operation of Bipolar Junction Transistors
Date Experiment Performed: Mar. 30, 2007
Date Report Submitted: Apr. 13, 2007
Pratik Mathur & Brendan Jou
Lab Section
The important thing to note for semiconductor operations is that the only e- of interest are the ones in the CB.
These e- in the CB are the only charge carriers that we care about in device physics. All of the previous
analysis holds for holes where the o
Carrier Action
From a device point of view nothing interesting happens under equilibrium conditions (i.e. we cant get any
net current flow). Only when a semiconductor is perturbed, giving rise to carrier action can currents flow
within and external to the
Chapter 2. Diode Circuits
Now we form our first useful semiconductor device, a pn junction in a bar of Si. At first we assume that we
have a step junction i.e. the concentration changes abruptly from p to n at the pn junction interface as shown
below
In r
The current-voltage (IV) characteristics of the ideal diode are modeled by the ideal diode equation. First we
will start with a qualitative explanation of the IV characteristics. We will begin with the equilibrium band
diagram of a pn junction
The filled
Small-Signal Distortion in Feedback Ampliers
for Audio1
James Boyk2 and Gerald Jay Sussman3
April 22, 2003
1
c 2003 Boyk & Sussman. You may copy and distribute this document so long
as the source is appropriately attributed.
2 Pianist in Residence, Lectur
EE 329 Introduction to Electronics
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EE 329 Introduction to Electronics
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EE 329 Introduction to Electronics
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EE 329 Introduction to Electronics
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EE 329 Introduction to Electronics
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EE 329 Introduction to Electronics
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EE 329 Introduction to Elec
5.0
PREVIEW
In the last two chapters, we looked at BJT circuits. In this chapter, we introduce the second major type of transistor, the
field-effect transistor (FET). There are two general classes of FETs: the metal-oxide-semiconductor FET (MOSFET) and
th
EE3114
Hwk #1 Semiconductor Physics and pn Junctions
PROBLEMS Due 1 week
Read textbook chapter sections 1.1, 1.2, 1.3 1) Intrinsic Semiconductors: Plot the intrinsic carrier concentration, i, over a temperature range of -40oC to +60oC. Use a software tool
EE3114 Electronics I 1) Textbook Problem 3.1 2) Textbook Problem 3.5 3) Textbook Problem 3.10
Homework #3 MOSFET
Assignment Due 1 Week
4) OrCAD SIMULATION: Using OrCAD or another PSpice simulator, create a circuit that can plot the IV characteristics of a
EE3114 Electronics I 1) Textbook Problem 4.16 2) Textbook Problem 4.17 3) Textbook Problem 4.21 4) Textbook Problem 4.33
Homework #5 MOSFET
Assignment Due 1 Week
EE3114 Electronics I
Homework #4 MOSFET Amplifier
Assignment Due 1 Week
1) For the n-channel enhancement-mode MOSFET circuit shown in figure 4.1 of the textbook, a. Calculate the small signal voltage gain, Av = vo/vi. Assume ro=large. The gain will be a f
EE3114 Electronics I 1) Textbook Problem 5.1 2) Textbook Problem 5.2 3) Textbook Problem 5.5
Homework #6 BJT DC Biasing
Assignment Due 1 Week
4) Textbook Problem 5.10, since VBE = 0.615v, we are looking for a more accurate value for IC. For this case, use
EE3114 Electronics I
Homework #7 BJT Amplifiers
Assignment Due 1 Week
All problems will use VBE,ON = 0.7 V and VT = 26 mV, unless otherwise noted 1) Textbook Problem 6.1(a) 2) Textbook Problem 6.7(a) 3) Textbook Problem 6.8(b) 4) Textbook Problem 6.8(c) 5
EE3114 Electronics I 1) Textbook Problem 9.7 2) Textbook Problem 9.8 3) Textbook Problem 9.13 4) Textbook Problem 9.25 5) Textbook Problem 9.38 6) Textbook Problem 9.44
Homework #8 Op Amps
Assignment Due 1 Week
EE 3114 Experiment 1 Equipment Orientation
I. Introduction
The purpose of this experiment is to acquaint the student with the characteristics and operation of the major equipment that will be used in this course. These include the oscilloscope, function g
EE3114 EXPERIMENT 3 BIASING OF A TRANSISTOR INVERTER STAGE
1. INTRODUCTION
A single transistor inverter stage is the basic building block of all analog circuits. An inverter stage amplifies small signals to the point where they can drive subsequent amplif
The book goes over several more examples that you should go over pp. 123 130.
3.3
BASIC TRANSISTOR APPLICATIONS
Transistors can be used to switch currents, voltages, and power; perform digital logic functions; and amplify
time-varying signals. In this sec
CH. 4.0 BASIC BJT AMPLIFIERS
In the last chapter, we described the operation of the bipolar junction transistor, and analyzed and designed the dc
response of circuits containing these devices. In this chapter, we emphasize the use of the bipolar transisto
4.2.3
Hybrid- Equivalent Circuit, Including the Early Effect
So far in the small-signal equivalent circuit, we have assumed that the collector current is independent of the
collector-emitter voltage. We discussed the Early effect in the last chapter in wh