Cairo University
Faculty of Engineering
Elec. & Comm. Dept.
Electronics 1
First Year
2008 2009
Exercise 1
Revision
Problem 1
For the shown figure, find the force affecting q1 .
q1
0.3 m
q2
0.2 m
q3
x
Where
q1 = -3 c
q2 = +5 c
q3 = -4 c
Problem 2
For the s
Cairo University
Faculty of Engineering
Elec. & Comm. Dept.
Electronics (1)
First Year
2008 2009
Exercise 2
Doping
Problem 1
a) Calculate the concentration of atoms in silicon.
b) If phosphorus is added such that the donor impurity is 1 part in 108, find
Cairo University
Faculty of Engineering
Elec. & Comm. Dept.
Electronics (1)
First Year
2008 2009
Exercise 3
Problem 1
An n-type silicon has 1.5 * 1014 phosphorus atoms/cm3.
a- Calculate the position of the donor level ED and Fermi level EF.
b- Verify that
Cairo University
Faculty of Engineering
Elec. & Comm. Dept.
Electronics (1)
First Year
2008 2009
Exercise 5
Problem 1
Calculate the built-in potential of Si PN junction doped with 1017 donors/cm3 in the nside and 1015 acceptor atoms/cm3 in the p-side, ni
Cairo University
Faculty of Engineering
Elec. & Comm. Dept.
Electronics (1)
First Year
2008 2009
Exercise 4
Problem 1
Two semiconductor specimens are connected in series. One is n-type with N D = 1014 cm-3, length 1
cm an area 0.1 cm2. The other is p-type