Korea Advanced Institute of Science and Technology
MSE 340

Spring 2013
ECE 340
Homework Assignment #11
Spring 2013
Due: Monday, April 29th, 2013
Print your name and NetID legibly. Follow the guidelines and format given in the syllabus. Staple multiple
pages. Put all units.
1. Sketch the energy band diagram for an npn trans
Korea Advanced Institute of Science and Technology
MSE 340

Fall 2015
Imaging Nanocrystals by Electron
Microscopy
Cafer T. Yavuz
Credits: NASA Ames Center, various online sources
1
Overview of microscopy
Optical Microscope
Electron Microscopes
Transmission electron microscope
Scanning electron microscope
Scanning probe mic
Korea Advanced Institute of Science and Technology
MSE 340

Spring 2013
ECE 340
Homework Assignment #7
Spring 2013
Due: Friday, March 15th, 2013
Print your name and NetID legibly. Follow the guidelines and format given in the syllabus. Staple multiple
pages. Put all units.
1. An abrupt Si pn junction has Na=51016cm3 on the
Korea Advanced Institute of Science and Technology
MSE 340

Spring 2013
ECE 340
Homework Assignment #6
Spring 2013
Due: Wednesday, March 6th, 2013
Print your name and NetID legibly. Follow the guidelines and format given in the syllabus. Staple multiple
pages. Put all units.
1. The donor profile of a silicon sample is shown b
Korea Advanced Institute of Science and Technology
MSE 340

Spring 2013
ECE 340
Homework Assignment #5
Spring 2013
Due: Friday, February 22nd, 2013
Print your name and NetID legibly. Follow the guidelines and format given in the syllabus. Staple multiple
pages. Put all units.
1. A 200mW laser beam with wavelength = 5000 is f
Korea Advanced Institute of Science and Technology
MSE 340

Spring 2013
Homework Assignment #4
ECE 340
Spring 2013
Due: Friday, February 15th, 2013
Print your name and NetID legibly. Follow the guidelines and format given in the syllabus. Staple multiple
pages. Put all units.
1. A Si bar is 0.1 cm long and 100 m2 in crosssec
Korea Advanced Institute of Science and Technology
MSE 340

Spring 2013
ECE 340
Homework Assignment #3
Spring 2013
Due: Friday, February 8th, 2013
Print your name and NetID legibly. Follow the guidelines and format given in the syllabus. Staple multiple
pages. Put all units.
1. (a) Plot the function f(x) =exp(2.5x) from x=0.0
Korea Advanced Institute of Science and Technology
MSE 340

Spring 2013
ECE 340
Homework Assignment #2
Spring 2013
Due: Friday, February 1st, 2013
Print your name and NetID legibly. Follow the guidelines and format given in the syllabus. Staple multiple
pages. Put all units.
1. Determine the concentration of valence electrons
Korea Advanced Institute of Science and Technology
MSE 340

Spring 2013
ECE 340
Homework Assignment #1
Spring 2013
Due: Friday, January 25th, 2013
Print your name and NetID legibly. Follow the guidelines and format given in the syllabus. Staple multiple
pages. Put all units.
1. (a) Find the number of atoms/cm2 on the (100) su
Korea Advanced Institute of Science and Technology
MSE 340

Spring 2013
1. Suppose you have three (3) Si pn junctions, made from the same original wafer/material, but with
different dopings. Assume there is effectively no difference in lifetimes, diffusion constants, or
diffusion lengths between electrons and holes in any dev
Korea Advanced Institute of Science and Technology
MSE 340

Spring 2013
Homework Assignment #8
ECE 340
Spring 2013
Due: Monday, April 1st, 2013
Print your name and NetID legibly. Follow the guidelines and format given in the syllabus. Staple multiple
pages. Put all units.
1. Assume that an abrupt Si pn junction with area 10
Korea Advanced Institute of Science and Technology
MSE 340

Spring 2013
Homework Assignment #9
ECE 340
Spring 2013
Due: Friday, April 5th, 2013
Print your name and NetID legibly. Follow the guidelines and format given in the syllabus. Staple multiple
pages. Put all units.
1. For a symmetric silicon pn junction (Na=Nd=51017cm
Korea Advanced Institute of Science and Technology
MSE 340

Spring 2013
ECE 340
Homework Assignment #10
Spring 2013
Due: Friday, April 19th, 2013
Print your name and NetID legibly. Follow the guidelines and format given in the syllabus. Staple multiple
pages. Put all units.
1. Consider four simple cases of the MOS capacitor,
Korea Advanced Institute of Science and Technology
MSE 340

Fall 2015
or
Is Organic Chemistry the Key to
the Synthesis of Metal Oxide
Nanoparticles?
Markus Niederberger
Max Planck Institute of Colloids and Interfaces, Potsdam, Germany
Markus.Niederberger@mpikggolm.mpg.de
Outline of the Lecture
Short summary of aqueous sol
Korea Advanced Institute of Science and Technology
MSE 340

Fall 2015
XRay Diffraction:
Bragg and Scherrer
1
XRays to Con:irm a Crystal Structure
Incoming Xrays diffract from crystal planes, following
Braggs law: n = 2dsin()
Adapted from Fig. 3.2W,
Callister 6e.
Measurement of:
Critical angles, c,
for Xrays provide
at
Korea Advanced Institute of Science and Technology
MSE 340

Fall 2015
Crystals?
Adapted from Prof. S. Pamir Alpay
(UConn) class on Materials
S. Pamir Alpay
Professor
MSE Program Director
Ph.D., University of Maryland (1999)
Chemical, Materials & Biomolecular
Engineering Department
97 North Eagleville Road, Unit 3136
Storrs
Korea Advanced Institute of Science and Technology
MSE 340

Fall 2015
SolGel Nano Materials and Process
Prof. ByeongSoo Bae
Dept. of Materials Sci. & Eng.
bsbae@kaist.ac.kr
I.
II.
III.
IV.
V.
VI.
Introduction
Chemistry of Precursors Solutions
SolGel Process of Silica
SolGel Process of Complex Oxides (Ferroelectrics)
Sol
Korea Advanced Institute of Science and Technology
MSE 340

Fall 2015
Introduction to oxide nanomaterials
Cafer T. Yavuz
KAIST
EEWS 532 Functional Nanoscale Oxides Prof. Cafer T. Yavuz
1
ppm
EEWS 532 Functional Nanoscale Oxides Prof. Cafer T. Yavuz
2
Oxide de=initions
Britannica: Any of a large and important class of chemic
Korea Advanced Institute of Science and Technology
MSE 340

Spring 2013
2. A semiconductor has equilibrium carrier concentrations
at room temperature, where one can assume full ionization of dopants.
a) What is the intrinsic carrier concentration of the semiconductor?
b) Circle the expression which most accurately represents
Korea Advanced Institute of Science and Technology
MSE 340

Spring 2013
CHAPTER 3
Growth modes, sintering mechanisms and equilibrium shape of
small particles
This chapter provides a description of the growth modes of vapordeposited
material on a substrate along with an overview of the two key sintering
mechanisms of small me
Korea Advanced Institute of Science and Technology
MSE 340

Spring 2013
Chapter 5
Surfaces
The energy of a surface and its dependence on crystallographic orientation
can determine the equilibrium shape of the crystal. However, even more
important to crystal growth is the eect of surface structure on atom attachment kinetics.
Korea Advanced Institute of Science and Technology
MSE 340

Spring 2013
Introduction to Semiconductor Devices (MS415)
Homework # 4
Assigned: 26 Apr 13
Due date: 31 May 13
A Schottky barrier is formed between a metal having a work function of 4.3 eV and ptype Si (electron affinity = 4 eV). The acceptor doping in the Si is 6x10
Korea Advanced Institute of Science and Technology
MSE 340

Spring 2013
Introduction to Semiconductor Devices (MS415)
Homework # 3
Assigned: 25 Mar 13
Due date: 24 Apr 13
1.
2.
3.
A Si p+n junction has a donor doping of 5 x 1016 cm3 on the n side and a crosssectional
area of 103 cm2. If taup= 1 us and Dp=10 cm2/s, calcula
Korea Advanced Institute of Science and Technology
MSE 340

Spring 2013
Introduction to Semiconductor Devices (MS415)
Homework # 2
Assigned: 18 Mar 13
Due date: 15 Apr 13
Ge bar 1m long and 100 m2 in crosssectional area is doped with 1x1017/cm3
phosphorous. Find the current at 300 K with 10 V applied assuming that the satura