Theory of Solids HW-11 Solution
By Qifeng Shan Ashcroft and Mermin's book 13-2 Deduce from (13.25) that at T = 0 (and hence to an excellent approximation at any T < TF) the conductivity of a band with cubic symmetry is given by (13.71) F v S , 12 3 where
Theory of Solids HW-10 Solution
By Qifeng Shan Ashcroft and Mermin's book 14-3 If there is any nonuniformity of the magnetic field over the sample of metal used in a de Haas-van Alphen experiment, then the structure in g() will reflect this variation. Dif
Theory of Solids HW-4 Solution
By Qifeng Shan Ashcroft and Mermin's book 2-4 Insensitivity of the distribution function to small changes in the total number of electrons In deriving the Fermi distribution (page 41) we argued that the probability of a give
Theory of Solids HW-7 Solution
By Qifeng Shan Ashcroft and Mermin's book 6-1 Power specimen of that one sample is face-centered cubic, one is body-centered cubic and one has the diamond structure. The approximate positions of the first four diffraction ri
Theory of Solids HW-13 Solution
By Qifeng Shan Ashcroft and Mermin's book 17-3 Properties of the Coulomb and Screened Coulomb Potentials (a) From the integral representation of the delta function,
r
dk
2
3
eik r ,
(17.70)
and the fact that the Coulomb
Theory of Solids HW-5 Solution
By Qifeng Shan Ashcroft and Mermin's book 4-4 (a) Prove that the Wigner-Seitz cell for any two-dimensional Bravais lattice is either a hexagon or a rectangle. (b) Show that the ratio of the lengths of the diagonals of each p
Theory of Solids HW-12 Solution
By Qifeng Shan Ashcroft and Mermin's book 16-1 Let h(k) be any one-electron property whose total density is dk H h(k ) g (k ), (16.33) 4 3 where g is the electronic distribution function. If, for example, h(k) is the electr
Theory of Solids HW-8 Solution
By Qifeng Shan Ashcroft and Mermin's book 8-2 Density of levels
(a) In the free electron case the density of levels at the Fermi energy can be written in the form (Eq. (2.64) g(F) = mkF / 22. Show that the general form (8.63
Theory of Solids HW-6 Solution
By Qifeng Shan Ashcroft and Mermin's book 5-1 (a) Prove that the reciprocal lattice primitive vectors defined in (5.3) satisfy:
b1 b 2 b3
2 3
a1 a 2 a3
.
(5.15)
(Hint: Write b1 (but not b2 or b3) in terms of the ai, and use
Theory of Solids HW-1 Solution
By Qifeng Shan Ashcroft and Mermin's book 1-1 Poisson distribution. In the Drude model the probability of an electron suffering a collision in any infinitesimal interval dt is just dt / . (a).Show that an electron picked at
01
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Semiconductor Devices and Models 1
Monday 4:00 pm to 6:50 pm
JONSSN 4107
Michael Shur
518 276 2201
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Office hours
Monday 2 pm to 3:30 pm
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S
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Section 10
Materials Time Line
Stone Age 2,000,000 bc - 6000 bc
(4000 bc in Europe)
Bronze Age 1800 bc (4000 bc) - 1200 bc
Iron Age 1200 bc -
SDM-I, Michael Shur 1998-2014
1
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Section 10
Stone Age Tools
From history.jupiter.fl.us
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Section 6
Atomic States. Example
Write the electron configuration for the atom with 10
electrons (Ne).
SDM, Michael Shur 1998-2014
1
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Section 6
Solution
For n = 1, the only allowed value of l is 0 (s state) and
the only allowed
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Section 7
fn ( E )
Fermi
1
level
E EF
1 exp
k T
B
The energy EF is called the Fermi energy (or the
Fermi level). It can be defined as the energy at
which the Fermi-Dirac distribution function is
equal to 1/2. When E is greater than EF
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02
Alexander Graham Bell
(words on the wall at
the entrance to Bell Labs)
Leave the beaten track occasionally and dive
into the woods. You will be certain to find
something that you have never seen before.
SDM-1, Michael Shur 1998-2014
1
shu
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Section 9
Band Diagrams and
Basic
Semiconductor
Equations
SDM I, Michael Shur 1998-2014
1
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Band Edges
Section 9
The bottom of the conduction band and the
top of the valence band correspond to
potential energies of electrons and
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Section 8
ELECTRON AND HOLE
MOBILITIES
AND DRIFT
VELOCITIES
SDM I, Michael Shur 1998-2014
1
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Thermal Velocity
Section 8
The average kinetic energy of thermal motion
per one electron is 3 kBT/2 where T is the
temperature in degre
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05
Periodic Table
Elements with a similar electronic structure for
valence electrons usually have similar chemical
properties.
Si (the electronic structure core +3s 23p2)
Ge (the electronic structure core +4s 24p2)
The Periodic Table of elem
ECSE-6230
Semiconductor Devices and Models I
Lecture 7
Prof. T. Paul Chow
Bldg. CII, Room 6111
Rensselaer Polytechnic Institute
Troy, NY 12180-3590
Tel. (518)276-2910
FAX (518)276-2990
e-mail: chowt@rpi.edu
ECSE-6230 Semiconductor Devices and Models I
Fal
ECSE-6230
Semiconductor Devices and Models I
Lecture 6
Prof. T. Paul Chow
Bldg. CII, Room 6111
Rensselaer Polytechnic Institute
Troy, NY 12180-3590
Tel. (518)276-2910
FAX (518)276-2990
e-mail: chowt@rpi.edu
ECSE-6230 Semiconductor Devices and Models I
Fal
ECSE-6230
Semiconductor Devices and Models I
Lecture 9
Prof. T. Paul Chow
Bldg. CII, Room 6111
Rensselaer Polytechnic Institute
Troy, NY 12180-3590
Tel. (518)276-2910
FAX (518)276-2990
e-mail: chowt@rpi.edu
ECSE-6230 Semiconductor Devices and Models I
Fal
ECSE-6230
Semiconductor Devices and Models I
Lecture 10
Prof. T. Paul Chow
Bldg. CII, Room 6111
Rensselaer Polytechnic Institute
Troy, NY 12180-3590
Tel. (518)276-2910
FAX (518)276-2990
e-mail: chowt@rpi.edu
ECSE-6230 Semiconductor Devices and Models I
Fa
ECSE-6230
Semiconductor Devices and Models I
Lecture 3
Prof. T. Paul Chow
Bldg. CII, Room 6111
Rensselaer Polytechnic Institute
Troy, NY 12180-3590
Tel. (518)276-2910
FAX (518)276-2990
e-mail: chowt@rpi.edu
ECSE-6230 Semiconductor Devices and Models I
Fal
ECSE-6230
Semiconductor Devices and Models I
Lecture 8
Prof. T. Paul Chow
Bldg. CII, Room 6111
Rensselaer Polytechnic Institute
Troy, NY 12180-3590
Tel. (518)276-2910
FAX (518)276-2990
e-mail: chowt@rpi.edu
ECSE-6230 Semiconductor Devices and Models I
Fal
ECSE-6230
Semiconductor Devices and Models I
Lecture 5
Prof. T. Paul Chow
Bldg. CII, Room 6111
Rensselaer Polytechnic Institute
Troy, NY 12180-3590
Tel. (518)276-2910
FAX (518)276-2990
e-mail: chowt@rpi.edu
ECSE-6230 Semiconductor Devices and Models I
Fal
ECSE-6230
Semiconductor Devices and Models I
Lecture 4
Prof. T. Paul Chow
Bldg. CII, Room 6111
Rensselaer Polytechnic Institute
Troy, NY 12180-3590
Tel. (518)276-2910
FAX (518)276-2990
e-mail: chowt@rpi.edu
ECSE-6230 Semiconductor Devices and Models I
Fal
ECSE-6230
Semiconductor Devices and Models I
Lecture 1
Prof. T. Paul Chow
Bldg. CII, Room 6111
Rensselaer Polytechnic Institute
Troy, NY 12180-3590
Tel. (518)276-2910
FAX (518)276-2990
e-mail: chowt@rpi.edu
ECSE-6230 Semiconductor Devices and Models I
Fal
ECSE-6230
Semiconductor Devices and Models I
Lecture 2
Prof. T. Paul Chow
Bldg. CII, Room 6111
Rensselaer Polytechnic Institute
Troy, NY 12180-3590
Tel. (518)276-2910
FAX (518)276-2990
e-mail: chowt@rpi.edu
ECSE-6230 Semiconductor Devices and Models I
Fal
Theory of Solids HW-2 Solution
By Qifeng Shan Ashcroft and Mermin's book 1-4 Helicon Waves Suppose that a metal is placed in a uniform magnetic field H along the z-axis. Let an AC electric field E ei t be applied perpendicular to H. (a) If the electric fi