ECSE-2210, Microelectronics Technology, Prof. E. F. Schubert
Homework-01
1. Calculate the wavelength and the momentum of a photon with energy 1.5 eV.
2. The energy gap of GaAs is Eg,GaAs = 1.42 eV and the energy gap of Si is Eg,Si = 1.15 eV . If
both semi
Crib sheet 2: Diode and bipolar transistor relationships
Schematic sketch of abrupt p-n junction
Depletion region
= q (ND NA)
Neutral
region
Neutral
region
p-type
n-type
NA
ND
=0
=0
= +q ND
= q NA
xp
0
xn
x
A = diode area, NA = acceptor concentration,
Crib sheet 3: (MOS devices, Schottky junctions, CMOS)
Electrostatic potentials for MOS capacitors
1
[E i ( bulk ) E i ( x )]
q
Potential at position x
( x ) =
1
[Ei ( bulk ) Ei (surface)]
q
Potential at semiconductor/oxide interface
S =
1
[Ei ( bulk ) E F
1
IA
Periodic System of Elements
H
first conceived by Dimitri Mendeleev (1869)
1.01
Hydrogen
1s1
6.94
3
Li
4
IIA
11
Be
Sodium
3s1
IIIB IVB VB VIB VIIB
21
45.0
Sc
Potassium Calcium Scandium
4s1
4s2
3d14s2
37 85.5 38 87.6 39 88.9
Rb
Sr
Rubidium Strontium
5s
Physical constants
aB
0
e
c
ERyd
g
G
h
h
k
0
me
NAvo
R = k NAvo
=
=
=
=
=
=
=
=
=
=
=
=
=
=
0.5292
8.8542 1012 A s / (V m)
1.6022 1019 C
2.9979 108 m / s
13.606 eV
9.8067 m / s2
6.6873 1011 m3 / (kg s2)
6.6261 1034 J s
1.0546 1034 J s
1.3807 1023 J / K
1
Rensselaer Polytechnic Institute
Department of Electrical, Computer, and Systems Engineering
ECSE 2410: Signals and Systems, Spring 2012
Exam 1 Solutions
The boxed numbers beside each problem give the mean (left) and median (right) score for each
problem.
Rensselaer Polytechnic Institute
Department of Electrical, Computer, and Systems Engineering
ECSE 2410: Signals and Systems, Spring 2012
Exam 2 Solutions
The boxed numbers beside each problem give the mean (left) and median (right) score for each
problem.
Room temperature properties of Si, Ge, and GaAs Quantity Crystal structure Gap: Direct (D) / Indirect (I) Lattice constant Bandgap energy Intrinsic carrier concentration Effective DOS at CB edge Effective DOS at VB edge Electron mobility Hole mobility Ele
ECSE-2210 Microelectronics Technology; Prof. E. F. Schubert
Spring 2008 Quiz I
Note:
(i)
(ii)
(iii)
(iv)
Put your name on top of each page
Show your work and always show units
This is an open book exam
For materials constants and physical constants, pleas
ECSE 2210 Microelectronics Technology
Sample Quiz 3 K
General note: - kT= 0.0259 eV ; kT/q = 0.0259 V 7
- Electric eld is denoted by T: in the text
Sgi = 350x = 10~12 F/cm
Problem 1 Consider a MOS capacitor fabricated on a p-type silicon substrate do
ECSE-2210, Microelectronics Technology, Prof. E. F. Schubert
Spring Semester 2010 Final Exam
Note: Show your work, underline results, and always show units
1. Consider a pn junction diode. Give bias conditions and doping concentrations in which the
follow
ECSE-2210, Microelectronics Technology, Prof. E. F. Schubert
Spring Semester 2010 Midterm Exam
Note: Show your work; always show units; and justify your answers.
1. Consider a Si and a GaAs pn junction diode that are connected in series in an electronic c
Spring Semester 2010 Midterm Exam Solutions
1. (a) The electrical circuit diagram is shown in the figure below.
Forward voltages of the two diodes, Si and GaAs, are derived using the Shockley
equation,
e
where
1.0 1010 cm3 ,
12 cm2/s,
1.
0.0001 cm2 and
,
MicroelectronicsTechnology
E.F.Schubert
2012,allrightsreserved
RensselaerPolytechnicInstitute
Troy,NewYork
SolidStateDevices
Examplesare:
o Fieldeffecttransistors
o Bipolartransistors
o LEDs
o Lasers
o Photodetectors
o Solarcells
Chapter1page1
Transporto
ECSE-2410 Signals & Systems
Spring 2012
Graded by Li Jia.
HW#4 Solutions
Due Tuesday, 2/7: Problem 2.21, parts a, b, c, d, each worth 10 points. You can use standard
formulas for finite and infinite summations.
2.21. Compute the convolution y [ n ] = x [
ECSE-2410 Signals & Systems
Spring 2012
Graded by Yang Li.
HW#18 Solutions
9.22.a, b, c, d, f, g.
You should use Tables 9.1 and 9.2 on pp. 691-692.
Note that the Partial Fraction Expansion approach only works properly when the order
of the numerator polyn
ECSE-2410 Signals & Systems
Spring 2012
Graded by Li Jia.
HW#19 Solutions
Due Tuesday, 4/24.
9.25, all parts.
In each part, justify your answer and clearly identify key points in your sketch (e.g. 0 and
omega zero), as well as the trend as omega goes to i
ECSE-2410 Signals & Systems
Spring 2012
Graded by Yang Li.
HW#21 Solutions
Due Tuesday, 5/1.
11.24 a,b,c,h (K > 0 only).
Justify your answer in each case.
11.24. Sketch the root loci for K > 0 for each of the following:
Solutions
1
. This has one pole at
ECSE-2410 Signals & Systems
Spring 2012
Graded by Li Jia.
HW#23 Solutions
Due Tuesday, 5/8.
10.13.
10.16.
10.24.
Justify your answer in each case.
10.13. Consider the rectangular signal
1
x [n ] =
0
0n5
otherwise
Let g [ n ] = x [ n ] x [ n 1].
10.13.a.