DEPARTMENT OF ELECTRICAL ENGINEERING, IIT KANPUR
EE210: Microelectronics  I
HW 9
Unless stated otherwise, the BJT in the problems given below has the following
characteristics
I S 2.03 1015 A; F 100; R 1;VA ; rbb 200;VT 26mV
C jeo 1 pF ; C jco 0.5 pF ; C
Department of Electrical Engineering
Indian Institute of Technology, Kanpur
EE 210
Home Assignment #12
Assigned: 24/3/15
1. In a simple BJT ClassB pushpull output stage, as discussed in class, VCC = VEE = 12 V, RL
= 1 k, and VCE(sat) = 0.2 V. Assume tha
Department of Electrical Engineering
Indian Institute of Technology, Kanpur
EE 210
Home Assignment #11
Assigned: 17/3/15
1. For the NMOS sourcecoupled pair discussed in class, derive the expressions for Id1, Id2, and
the linear range Vid, and compare the
Department of Electrical Engineering
Indian Institute of Technology, Kanpur
EE 210
Home Assignment #10
Assigned: 11/3/15
1. Determine the dc collector currents of Q1 and Q2, and then the ac smallsignal midband input
resistance and voltage gain for the Da
Department of Electrical Engineering
Indian Institute of Technology, Kanpur
EE 210
Home Assignment #9
Assigned: 4/3/15
1. Show that for a CS(D) stage, the expressions for the voltage gain Av and the output resistance
R0 are given by Av = gmRD/[1 + (gm + g
Department of Electrical Engineering
Indian Institute of Technology, Kanpur
EE 210
Home Assignment #8
Assigned: 24/2/15
1. Consider a simple CE amplifier, as given in class, biased with IC = 1 mA (assume = 100).
With RC = 1 k, what is the maximum value of
Department of Electrical Engineering
Indian Institute of Technology, Kanpur
EE 210
Home Assignment #7
Assigned: 11/2/15
1. Perform an exact ac smallsignal lowfrequency analysis of the equivalent circuit for an npn
cascode current source, as given in cla
Department of Electrical Engineering
Indian Institute of Technology, Kanpur
EE 210
Home Assignment #4
Assigned: 27/1/15
+5 V
1. For the transistor circuit shown in Fig.1, the emitter potential
VE is measured to be equal to 1 V. Determine IE, VB, IB, IC,
V
Department of Electrical Engineering
Indian Institute of Technology, Kanpur
EE 210
Home Assignment #13
Assigned: 8/4/15
1. Consider an NMOS commonsource stage, as shown in Fig.1, with ID = 0.5 mA. Using the
ZVTC method, estimate the upper cutoff frequenc
DEPARTMENT OF ELECTRICAL ENGINEERING, IIT KANPUR
EE210: Microelectronics  I
HW 4
Unless stated otherwise, the BJT in the problems given below has the following
characteristics
I S 2.03 1015 A; F 100; R 1;VA 100; rbb 200;VT 26mV
C jeo 1 pF ; C jco 0.5 pF
DEPARTMENT OF ELECTRICAL ENGINEERING, IIT KANPUR
EE210: Microelectronics  I
HW 3
Unless stated otherwise, the BJT in the problems given below has the following
characteristics
I S 2.03 1015 A; F 100; R 1;VA 100; rbb 200;VT 26mV
C jeo 1 pF ; C jco 0.5 pF
DEPARTMENT OF ELECTRICAL ENGINEERING, IIT KANPUR
EE210: Microelectronics  I
HW 2
The diode in the problems given below has the following characteristics
I S 2 1015 A; n 1;VT 26mV ; C jo 2.63 pF ;Vbi 0.85V ; m 0.5; 26ns
Q.1 Using iterative analysis determ
DEPARTMENT OF ELECTRICAL ENGINEERING, IIT KANPUR
EE210: Microelectronics  I
HW 1
Date: 4.1.13
Q.1 (a) A two terminal element X has IV characteristics given by the relation
I x Vx6 . A simple model for this device is a constant voltage of V . Determine
t
Rate Processes
Homework Assignment on Convection Heat transfer
Q.1. Air at 400 K flows over a horizontal cylinder at a velocity of 15 m/s. The diameter of the cylinder is
0.05 m and Ts = 300 K. Calculate the rate of heat transfer to the cylinder per unit
EE 250  Control Systems
This is for the correction of something that was mentioned in the class dated January 06, 2015
(Tuesday).
TimeShifting
L[f (t T )] = esT F (s)
The derivation for the expression is as follows:
L[f (t T )] =
f (t T )est dt
0
Let t1
Department of Electrical Engineering
Indian Institute of Technology, Kanpur
EE 210
Home Assignment #14
Assigned: 13/4/15
1.
For the circuit shown in Fig.1, find vi as a function of vs and vf. Assume that the inverting amplifier input
resistance is infinit
EE210: MicroelectronicsI
Lecture9 : BJT4
B. Mazhari
Dept. of EE, IIT Kanpur
B. Mazhari, IITK
CapacitancesandHighFrequencyModel
44
GNumber
Capacitances in a BJT
Anytime we have a charge which changes with
voltage, we have a capacitance
C
Q
V
There are
EE210: MicroelectronicsI
Lecture8 : BJT3
B. Mazhari
Dept. of EE, IIT Kanpur
36
GNumber
B. Mazhari, IITK
BJT:SmallSignalModel
Complete small signal model (dc) for a 3terminal
device.
Ii
I0
+
unilateral
+
Vi
V0


I
ri ( i ) 1
Vi
ii
gm (
I o
)
Vi
iO
g
EE210: MicroelectronicsI
Lecture10 : Bipolar Junction Transistor3
B. Mazhari
Dept. of EE, IIT Kanpur
B. Mazhari, IITK
35
GNumber
N
E
P
n
N
IN
p
n
IC
IP
VCB
VEB
IB
IR
R.IR
E
C
B
IR
IF
E
C
R.IR
B. Mazhari, IITK
B
F.IF
36
GNumber
Ebers Moll Model
IF
VB
ESO203A Tut 1
13.1.17
Q1: In the circuits of Figure 1 let e be sinusoidal at 50 Hz, 100V rms. In the steady state
i has a value of 10A and is in phase with e. L = 10 ohms. Find the value of voltage
vector v. Draw a phasor diagram for the circuit. If R = 2
ESO203A Tut 1
13.1.17
Q1: In the circuits of Figure 1 let e be sinusoidal at 50 Hz, 100V rms. In the steady state
i has a value of 10A and is in phase with e. L = 10 ohms. Find the value of voltage
vector v. Draw a phasor diagram for the circuit. If R = 1
EE210: MicroelectronicsI
Lecture39 : Operational Amplifiers_1
p
p
B. Mazhari
Dept. of EE, IIT Kanpur
B. Mazhari, IITK
1GNumber
BJT Operational Amplifier
Simple BJT Opamp
Compensation
Buffer and Noninverting amplifier
B. Mazhari, IITK
2GNumber
Spec