DEPARTMENT OF ELECTRICAL ENGINEERING, IIT KANPUR
EE210: Microelectronics - I
HW 9
Unless stated otherwise, the BJT in the problems given below has the following
characteristics
I S 2.03 1015 A; F 100; R 1;VA ; rbb 200;VT 26mV
C jeo 1 pF ; C jco 0.5 pF ; C
Department of Electrical Engineering
Indian Institute of Technology, Kanpur
EE 210
Home Assignment #12
Assigned: 24/3/15
1. In a simple BJT Class-B push-pull output stage, as discussed in class, VCC = VEE = 12 V, RL
= 1 k, and VCE(sat) = 0.2 V. Assume tha
Department of Electrical Engineering
Indian Institute of Technology, Kanpur
EE 210
Home Assignment #11
Assigned: 17/3/15
1. For the NMOS source-coupled pair discussed in class, derive the expressions for Id1, Id2, and
the linear range Vid, and compare the
Department of Electrical Engineering
Indian Institute of Technology, Kanpur
EE 210
Home Assignment #10
Assigned: 11/3/15
1. Determine the dc collector currents of Q1 and Q2, and then the ac small-signal midband input
resistance and voltage gain for the Da
Department of Electrical Engineering
Indian Institute of Technology, Kanpur
EE 210
Home Assignment #9
Assigned: 4/3/15
1. Show that for a CS(D) stage, the expressions for the voltage gain Av and the output resistance
R0 are given by Av = gmRD/[1 + (gm + g
Department of Electrical Engineering
Indian Institute of Technology, Kanpur
EE 210
Home Assignment #8
Assigned: 24/2/15
1. Consider a simple CE amplifier, as given in class, biased with IC = 1 mA (assume = 100).
With RC = 1 k, what is the maximum value of
Department of Electrical Engineering
Indian Institute of Technology, Kanpur
EE 210
Home Assignment #7
Assigned: 11/2/15
1. Perform an exact ac small-signal low-frequency analysis of the equivalent circuit for an npn
cascode current source, as given in cla
Department of Electrical Engineering
Indian Institute of Technology, Kanpur
EE 210
Home Assignment #4
Assigned: 27/1/15
+5 V
1. For the transistor circuit shown in Fig.1, the emitter potential
VE is measured to be equal to 1 V. Determine IE, VB, IB, IC,
V
Department of Electrical Engineering
Indian Institute of Technology, Kanpur
EE 210
Home Assignment #13
Assigned: 8/4/15
1. Consider an NMOS common-source stage, as shown in Fig.1, with ID = 0.5 mA. Using the
ZVTC method, estimate the upper cutoff frequenc
Department of Electrical Engineering
Indian Institute of Technology, Kanpur
EE 210
Home Assignment #14
Assigned: 13/4/15
1.
For the circuit shown in Fig.1, find vi as a function of vs and vf. Assume that the inverting amplifier input
resistance is infinit
DEPARTMENT OF ELECTRICAL ENGINEERING, IIT KANPUR
EE210: Microelectronics - I
HW 4
Unless stated otherwise, the BJT in the problems given below has the following
characteristics
I S 2.03 1015 A; F 100; R 1;VA 100; rbb 200;VT 26mV
C jeo 1 pF ; C jco 0.5 pF
DEPARTMENT OF ELECTRICAL ENGINEERING, IIT KANPUR
EE210: Microelectronics - I
HW 3
Unless stated otherwise, the BJT in the problems given below has the following
characteristics
I S 2.03 1015 A; F 100; R 1;VA 100; rbb 200;VT 26mV
C jeo 1 pF ; C jco 0.5 pF
DEPARTMENT OF ELECTRICAL ENGINEERING, IIT KANPUR
EE210: Microelectronics - I
HW 2
The diode in the problems given below has the following characteristics
I S 2 1015 A; n 1;VT 26mV ; C jo 2.63 pF ;Vbi 0.85V ; m 0.5; 26ns
Q.1 Using iterative analysis determ
DEPARTMENT OF ELECTRICAL ENGINEERING, IIT KANPUR
EE210: Microelectronics - I
HW 1
Date: 4.1.13
Q.1 (a) A two terminal element X has I-V characteristics given by the relation
I x Vx6 . A simple model for this device is a constant voltage of V . Determine
t
Rate Processes
Homework Assignment on Convection Heat transfer
Q.1. Air at 400 K flows over a horizontal cylinder at a velocity of 15 m/s. The diameter of the cylinder is
0.05 m and Ts = 300 K. Calculate the rate of heat transfer to the cylinder per unit
EE 250 - Control Systems
This is for the correction of something that was mentioned in the class dated January 06, 2015
(Tuesday).
Time-Shifting
L[f (t T )] = esT F (s)
The derivation for the expression is as follows:
L[f (t T )] =
f (t T )est dt
0
Let t1
ES0 203A INTRODUCTION to EE
TUT4
3.2.17
Q1: Given two coupled coils give a procedure to inscribe the polarity markings by dots.
The windings are NOT visible. Only 4 terminals are accessible.
Q2: The following test data refers to a 30 KVA 2400/240 V 50 Hz
EE210: Microelectronics-I
Lecture-10 : Bipolar Junction Transistor-3
B. Mazhari
Dept. of EE, IIT Kanpur
B. Mazhari, IITK
35
G-Number
N
E
P
n
N
IN
p
n
IC
IP
VCB
VEB
IB
IR
R.IR
E
C
B
IR
IF
E
C
R.IR
B. Mazhari, IITK
B
F.IF
36
G-Number
Ebers Moll Model
IF
VB
ESO203A Tut 1
13.1.17
Q1: In the circuits of Figure 1 let e be sinusoidal at 50 Hz, 100V rms. In the steady state
i has a value of 10A and is in phase with e. L = 10 ohms. Find the value of voltage
vector v. Draw a phasor diagram for the circuit. If R = 2
ESO203A Tut 1
13.1.17
Q1: In the circuits of Figure 1 let e be sinusoidal at 50 Hz, 100V rms. In the steady state
i has a value of 10A and is in phase with e. L = 10 ohms. Find the value of voltage
vector v. Draw a phasor diagram for the circuit. If R = 1
EE210: Microelectronics-I
Lecture-39 : Operational Amplifiers_1
p
p
B. Mazhari
Dept. of EE, IIT Kanpur
B. Mazhari, IITK
1G-Number
BJT Operational Amplifier
Simple BJT Opamp
Compensation
Buffer and Non-inverting amplifier
B. Mazhari, IITK
2G-Number
Spec
EE 210
HW -9: output stages
2
PTr Ps I C RC
2
vop
RC | RL
MQ-6
;
Q.
Q Determine the maximum power efficiency of the amplifier
amplifier.
.
F 100;VT 26mV
6.7V
vO
-6.7V
8
MQ-6
;
Q.
Q Determine the maximum power efficiency of the amplifier
amplifier.
F 10
EE210: Microelectronics-I
Lecture-16 :BJT Amplifier-part-5
Biasing
B. Mazhari
Dept. of EE, IIT Kanpur
B. Mazhari, IITK
72
G-Number
Bias Point : I CQ ,VCEQ
VT
Rin ~ r
I CQ
vom
B. Mazhari, IITK
AVO
VCC VCEQ
VT
HD2
Min VCEQ VCEsat ; I CQ RC RL
25
73
G-
EE 250 - Assignment 1
Q1.
Find the Laplace transform of the following (here u(t) denotes the unit-step signal):
a) f (t) = sin(t + ), for t 0; and f (t) = 0 f or t < 0. where is a constant.
2
1
1
u(t) u(t a) + u(t 2a)
b)
a
a
a
c) f (t) = t2 sin(t), for t