ECE 440
Homework I Solution
Summer 2010
1. A convenient unit of length for description of solids is the nanometer (nm), which is the order of magnitude of a typical distance between atoms. (Actual sizes are between 0.1 nm and 1.0 nm. Many older texts use
ECE 440
Homework 3 Due: Friday, July 2nd, 2010
Summer 2010
Print your name and netid legibly. Show all work leading to your answer clearly and neatly. Staple multiple pages. 1. Problem 2.16 ( Pierret) 2. Problem 2.17 ( Pierret). Draw the energy band diagr
ECE 440
HWII Solution
Summer 2010
1
2
4. The covalent bonding model gives false impression of the localization of carriers. As an illustration:
a) Calculate the radius of the electron orbit around the donor shown below, assuming a ground state hydrogen-li
ECE 440
Homework 2 Due: Friday, June 25, 2010
Summer 2010
Print your name and netid legibly. Show all work leading to your answer clearly and neatly. Staple multiple pages. 1. Problem 2.4 ( Pierret) 2. Problem 2.5 ( Pierret) 3. Problem 2.6 ( Pierret) 4. T
ECE440
Summer 2010
Assignment # 7 (Due: July 30 2010) Please write your name and net ID on your homework. For full credit please show all work leading to your answer. 1. Problem 14.3 (Pierret). Draw the Energy band diagram. 2. MOS Band Diagrams. Consider
ECE440
Summer 2010
Assignment # 7 Solution 1. Problem 14.3 (Pierret). Draw the Energy band diagram.
4.03eV
4.29eV 5.10eV 1.07eV
Vbi=0.81V
Instant after contact
Under equilibrium
2. MOS Band Diagrams. Consider four simple cases of the MOS capacitor low gat
ECE 440
Homework 6 Solution
+
Summer 2010
1. Calculate the capacitance for the following Si p -n junction reverse biased at 1, 5 and 10 15 3 2 volts. The junction has Nd=2x10 /cm and cross sectional area = 0.001 cm . Assume EF ~Ev
2 for the p-region. Plot
ECE440
Summer 2010
Assignment # 6 Due: July 23 2010 Please write your name and net ID on your homework. For full credit please show all work leading to your answer.
1. Calculate the capacitance for the following Si p+-n junction reverse biased at 1, 5 and
ECE 440
Homework 5 Solution
Summer 2010
(1) V = V0 / 3 =
kT N D N A / 3 = 0.257 V ln q ni2
(2) D p =
kT u p = .0259 420 = 10.87 cm 2 / s q
(3) L p = p D p = .0104 cm (4) Dn =
kT u n = .0259 540 = 13.99 cm 2 / s q
(5) Ln = n Dn = 1.18 10 -3 cm
From (6.23,
ECE 440
Homework 5 Due: Friday, July 16th, 2010
Summer 2010
Print your name and netid legibly. Show all work leading to your answer clearly and neatly. Staple multiple pages. 1. PN Junction Current: An abrupt Si p-n junction has the following properties a
ECE 440
Homework 4 Solution
Summer 2010
1. Revisiting Charge neutrality: We have learned in class that satisfying Poisson equation and charge conservation is essential for device modeling. We will explore this for the simple case of a uniformly doped Sili
ECE 440
Homework 4 Due: Friday, July 9th, 2010
Summer 2010
Print your name and netid legibly. Show all work leading to your answer clearly and neatly. Staple multiple pages. 1. Revisiting Charge neutrality: We have learned in class that satisfying Poisson
ECE 440 Summer 2010
Homework 3 Solution
1. (20 points) Problem 2.16 (Pierret)
2. (20 points) Problem 2.17 (Pierret) Draw the energy band diagram for each part.
a)
EF Ei
b)
Ei EF EF-Ei = 0.298 eV Ei-EF = 0.358 eV
c)
EF Ei
EF-Ei = 0.298 eV
d)
EF Ei
e)
EF Ei
ECE 440
Homework I Due: Friday class, June 18, 2009
Summer 2010
Print your name and netid legibly. Show all work leading to your answer clearly and neatly. Staple multiple pages. Put all units. 1. A convenient unit of length for description of solids is t