Chapter 5 Problems:
1) Given the formulas for the s and p atomic orbitals in Figure 5.1, plot contours of
constant wave function intensity in the r theta plane.
Radial part of the wave function:
s-orbital
p-orbital
1
1.6
1.4
0.8
1.2
1
0.6
0.8
0.4
0.6
0.4
A. If you consider the LCAO band structure for Si and compare it with the more precise
calculation by Chelikowski and Cohen on the last page of the test miscellaneous
information you will note that the LCAO band structure is not very close to the more
cor
As a member of the MegaJoule Industries research and development team you have been assigned to
design a molecular beam epitaxy process for growth of GaAs. Your MBE machine has the following
geometry:
The flux of Ga sticking to the surface of the substrat
1: Energy Band Diagrams
Consider the energy vs. momentum relationships (band diagrams) shown in Figure 2.7.
a)
What range of energies does the valence band of GaAs span based on Figure 2.7.?
The valence band spans -7 to 0 eV. The lower energy band from -1
Chapter 4 Solutions
1. Derive Equation 4.21 for the critical nucleus of a cluster based on Equations 4.17 and
4.20.
4 3
E = r 2 s +
r H
3
r* = s
2H
substitute r* into the first equation:
2
4 & 3s )
E * = s s 2 +
H(
+
3
3
4H
' 8H *
3s
4 3s
4H2 24 H2
3 & 1
Semiconductor Electronic Materials and Processing
MSE 460 Angus Rockett, Instructor
Homework #1
Problem 1:
A. What is the clock in a microprocessor and how is its frequency important?
Clock speed is how fast the microprocessor cycles. During each cycle it
You are required to make an infrared light emitting device for an optical communications
system. You have selected an In1-xGaxAs alloy. Now you need a process to deposit the
semiconductor alloy.
A. In a MBE system you plan to use an effusion cell for the
1.
2.
What is the boundary layer in a CVD reactor and what effects does it have (if a boundary layer even
forms) on the deposition rate if the growth occurs
The boundary layer separates the region of the gas phase where the concentration of reactants is
e
Semiconductor Electronic Materials and Processing
MSE 460, Spring 2016
Homework #2
For Chapter 3 and 4 solutions see the general solutions on Compass2g.
Additional questions:
Problem 1
Download the spreadsheet DiodeFitForHomework.xls from Compass for use
Homework Solutions
Chapter 3:
1. What are the two major causes of reverse bias breakdown in diodes?
Avalanche breakdown occurs when energetic carriers accelerating in the depletion
region of a reverse-biased junction interact with electrons in low-energy
Assignment of Term Project for MATSE 460
A. Rockett
MATSE 460, Spring 2016
University of Illinois
Abstract
An overview of the requirements, format, and grading procedures for the term project for
MATSE 460 are presented. The term project is to be prepared