ECE 440
Homework XI
Fall 2008
Due: Monday, Nov. 17, 2008
1. Redraw Fig. 7-3 for an n+-p-n transistor, and explain the various components of carrier flow
and current directions.
2. Sketch the energy ba
ECE 440
Homework IV
Fall 2006
Due: Friday, September 15, 2006
17
3
13
3
1. A compensated germanium sample is doped with 1x10 /cm acceptors and 5x10 /cm
donors. (a) What is the electron and hole concen
ECE 440
Homework 11 Solution
Fall 2009
1. Illuminated Diode. A silicon p-n diode with reverse saturation current 10 -10 A is used as
photodiode. This diode is illuminated with sunlight, yielding a pho
ECE 440
Homework 12
Fall 2009
Due: Friday, Dec 4, 2009
1. Sketch the energy band diagram for an n-p-n transistor in equilibrium (all terminals grounded)
and also under normal active bias (emitter junc
ECE 440
Homework XV
Fall 2005
Due: Friday, December 2, 2005
+
1. An n -polysilicon-gate p-channel MOS transistor is made on an n-type Si substrate with Nd =
16
3
5x10 /cm . The SiO2 thickness is 100 i
ECE 440
1.
Homework XI
Summer 2006
(a) Find the voltage VFB required to reduce to zero the negative charge induced at the
semiconductor surface by a sheet of positive charge Qox located x below the me
ECE 340
Homework I Due: Wednesday, January 28, 2004 (30 points total)
Spring 2004
1. How many atoms are found inside a unit cell of a simple cubic (sc), body-centered cubic (bcc), facecentered cubic (
ECE 440
Homework I
Fall 2009
Due: Wednesday, September 02, 2009
Print your name and netid legibly. Show all work leading to your answer clearly and
neatly. Staple multiple pages.
1.
In this problem, w
ECE 340
Homework VII Due: Monday, February 23, 2004
Spring 2004
1.
In soldering wires to a sample such as that shown in Fig. 3-25, it is difficult to align the Hall probes A and B precisely. If B is d
ECE 340
Homework IV
Fall 2005
Due: Friday, September 16, 2005
17
3
13
3
1. A compensated germanium sample is doped with 1x10 /cm acceptors and 5x10 /cm
donors. (a) What is the electron and hole concen
ECE 340
1.
Homework XII Due: Friday, April 02, 2004
Spring 2004
For a p+-n silicon junction, Na=1017/cm3 in the p-side and Nd=1015/cm3 in the n-side. Determine the depletion capacitance per unit area
ECE 340
Homework V
Spring 2004
Due: Friday, February 13, 2004 (30 points total) 16 3 1. (a) Construct a semi-logarithmic plot such as Fig. 4-7 for Si doped with 4x10 /cm donors and having 14 3 4x10 EH
ECE 444
Fall 2005
Sakulsuk Unarunotai
[email protected]
ECE 440 Review Problems
5.9
18
3
15
3
An abrupt Si p-n junction has N a = 10 cm on one side and N d = 5 10 cm on
the other side
(a) Calculate th
ECE 440
Homework VI Due: Friday, October 16, 2009
Fall 2009
Please write your name and net ID on your homework. For full credit please show all work leading to your answer. Note some of the metal work
ECE 440
Homework VIII
Fall 2009
Due: Monday, November 02, 2009
Print your name and netid legibly. Show all work leading to your answer clearly
and neatly. Staple multiple pages.
Problem # 1: A semi-in
ECE 340
1.
Homework IX Due: Friday, March 19, 2004
Spring 2004
A n+-p Si junction with a long p-region has the following properties: Na =1.5x1016/cm3; n = 1020 cm2/V-s; p = 380 cm2/V-s; n =1 s. If we
ECE 440
Homework IX
Fall 2008
Due: Monday, November 03, 2008
17
3
1. A p+-n silicon diode (V o = 0.956 volts) has a donor doping of 10 /cm and an nregion width = 1 m. Does it break down by avalanche o
ECE 340
Homework XIII Due: Wednesday, April 07, 2004
Spring 2004
1. Redraw Fig. 7-3 for an n+-p-n transistor, and explain the various components of carrier flow and current directions.
2. Sketch the e
ECE 340
1.
Homework X Due: Monday, March 15, 2004
Spring 2004
When a prolonged diffusion or a high-energy implantation is conducted to form a p/n junction. The doping profile near the junction is usua
ECE 440
HW Assignment 1 Solutions
Spring 2011
ECE 440 Homework Assignment 1 - Solutions
Due: Friday February 4th, 2011
1. In this problem, we will be using web-based simulations that are contained wit
ECE 440
Homework III
Fall 2009
Due: Friday, September 18, 2009
Print your name and netid legibly. Show all work leading to your answer clearly and
neatly. Staple multiple pages.
1. a) Construct a semi
ECE 440
Homework III
Fall 2008
Due: Monday, September 15, 2008
1. (a) A GaAs semiconductor crystal is doped with carbon atoms. If the carbon atoms displace
arsenic atoms, does the crystal become an n-
ECE 440
Homework III Solutions
Spring 2008
1. (a) It was mentioned in Section 3.2 that the covalent bonding model gives false
impression of the localization of carriers. As an illustration, calculate
ECE 444
Fall 2005
Sakulsuk Unarunotai
[email protected]
ECE 440 Review Problems
5.9
An abrupt Si p-n junction has N a = 1018 cm 3 on one side and N d = 5 1015 cm 3 on
the other side
(a) Calculate the
You must provide your name on the answer sheet. In addition, you are asked to voluntarily provide your social
security number in order to verify your identity and avoid confusion between two students"
In answering the following multiple choice questions select and circle the most nearly correct
answers.
1. (5 points) Consider silicon doped with 1017 cm-3 donors which are all ionized. Knowing that
t
ECE 440
Homework IV
Fall 2009
Due: Friday, September 25, 2009
Print your name and netid legibly. Show all work leading to your answer clearly
and neatly. Staple multiple pages.
1. A Si bar is 0.2 cm l
ECE 440
Homework V
Fall 2009
Due: Friday, October 09, 2009
Please write your name and net ID on your homework. Show all work leading to your
answer.
1. The acceptor profile of a silicon sample is show
ECE 440
Homework I
Fall 2008
Due: Wednesday, September 03, 2008
1. How many atoms are found inside a unit cell of a simple cubic (sc), body-centered cubic
(bcc), face-centered cubic (fcc), diamond str