ECE 441
Problem Set #2
Due: Wednesday, February 4
Professor E. Rosenbaum
Spring Semester 2015
Reading Assignment: Sections 4.1, 3.1-3.2
1.
Calculate the magnitude of the built-in field in the quasi-ne
A Beginners Tutorial on Sentaurus TCAD
For ECE 441 Spring 2015, University of Illinois at Urbana-Champaign
Zaichen Chen
Overview
There are 3 steps in the TCAD simulation: creating the device mesh, run
CMOS Process
gate-oxide
TiSi2
AlCu
SiO2
Tungsten
poly
p-well
n+
SiO2
n-well
p-epi
p+
p+
Dual-Well Trench-Isolated CMOS Process
State of the art 10 years ago
Still used for many products
1
Bulk-Si CMOS
ECE 441 Spring 2015 TCAD Assignment 1 Solution
1.
(a)
As explained in the tutorial, you should define a fine mesh near the junction and a coarse
mesh for the rest of the device. Also, since the device
ECE 441
Midterm Exam #2
April 6, 2015
Name: :3 Ol 00S
Problem 1 (30)
Problem 2 (20)
Problem 3 (20)
Problem / (30)
Total (100 points)
Read careﬂlly:
This is a 50 minute exam. You must stop work and t
ECE 441 Spring 2015 - Homework 3 Solution
1.
The exponential impurity distribution is
() = 0 ( )
Use the quasi neutral approximation, it can be derived:
|()| = |
1
()
()
25.9
| = | | = 0.32
= 8.09 1
ECE 441 Spring 2015 Homework 4 Solution
1.
(a)
From = and = we have =
=
=
. Therefore, from =
d
From = dt , we can derive
d
= dt
The general solution for this differential equation is
() = C exp (
ECE 441 Spring 2015 - HW1 Solution
1.
(a)
Since total charge in the region < 2 is zero, from Gausss Law it is obvious that
= 0 for > 2 . Similarly, we also have = 0 for < 0.
The negative sheet charge
1. In the circuit shown below, an unspecied semiconductor device is represented by a box.
The applied voltage is unknown; it may be zero or non-zero, positive or negative.
However, the band diagram (E
ECE 441 Spring 2015 - HW1 Solution
1.
(a)
Since total charge in the region < 2 is zero, from Gausss Law it is obvious that
= 0 for > 2 . Similarly, we also have = 0 for < 0.
The negative sheet charge
ECE 441 Spring 2015 - HW #14 Solution
1.
a)
The short channel PMOS drain current equations are:
For VGS < VTP, VDS > VDSAT:
ID =
W
L
eff Cox (VGS VT )VDS 2 VDS 2 )
1
V
1 DS
Esat L
For VGS < VTP, VDS V
ECE 441 Spring 2015 - HW #13 Solution
1. (postponed from HW #12)
The off-state leakage current of a long channel MOSFET can be expressed as
IOFF = exp (
),
Cd
where n = 1 +
In order to reduce the
ECE 441
Problem Set #13
Due: Wednesday, May 6
Professor E. Rosenbaum
Spring Semester 2015
Reading Assignment: Sections 10.1-10.2
1.
The ID model equations for an n-channel MOSFET are listed below. You
ECE 441 Spring 2015 - Homework 12 Solution
1. (P 8.4); postponed from HW #11.
Since Si = 2 cm, from Figure 1.6 we get Na = 7.5 1015 3.
In depletion, the gate voltage and surface potential is related b
ECE 441
Problem Set #13
Due: Wednesday, April 29
Professor E. Rosenbaum
Spring Semester 2015
Reading Assignment: Section 9.2
1.
Postponed from Problem Set #12. An NMOS transistor has body doping NA =
SECONDARY
AND PRIMARY
DATA
Sanjay Kalidindi
SECONDARY AND PRIMARY
DATA COLLECTION
Secondary
Published
information available from other
sources that has already been gathered.
This info is relevant to
ECE 441 Spring 2016 - HW1 Solution
1.
According to Eqn. (1.1.23) and (1.1.24), the effective density of states is
3/2
,
2,
= 2(
)
2
From Table 1.3, the density of states effective mass for electrons
ECE 441 Spring 2016 HW2 Solution
1.
(a)
Since the only current carrier in a metal is electron, the conductivity is
=
Thus
n =
= 0.375 2 1 1
This number is much smaller compared with the electron mob
Sanjay Kalidindi
CH.4 NOTES
Suppose you have manufactured a new
product and you want to sell it in a
foreign country. Three things you would
need to know to accomplish your goal.
Customs
Languages
Tim
ECE 441
TCAD Assignment #2
Due: May 1, 2015
In this exercise, you will use TCAD to simulate an NMOS transistor. You will learn how to
simulate a quasi-static C-V characteristic and an I-V characterist
ECE 441
Formula Sheet: Midterm #2
Monday, April 6, 2015
Professor E. Rosenbaum
Spring Semester 2015
1
1
exp
,
,
exp
exp
Abrupt PN junction:
,
ln
Avalanche multiplication:
, VJ is the reverse bias on t
ECE 441
TCAD Assignment #1
Due: Friday, March 13*
In this exercise, you will use TCAD to simulate a silicon PN junction diode. You will learn how
to (i) create a device structure using the TCAD script
ECE 441 Spring 2016 HW6 Solution
1. M&K P 5.12
Assume the diode has a long base on both the p-side and the n-side. The minority carrier
currents can be expressed as
( < ) = (
( > ) = (
+
)
) =
ECE 441 Spring 2016 HW4 Solution
1.
The E-field is lowest near the center of the device. This is because the doping level near the
center of the device is highest. Since the resistor is biased at Vab=
ECE 441 Spring 2016 HW5 Solution
1. M&K P 4.9
Assume we have an abrupt p+n diode. The capacitance of the diode can be expressed as
Cd =
=
2( )
Where is the junction area. Thus,
1
2( )
=
2
2
a)
Th
ECE 441 Spring 2016 HW3 Solution
1. (M&K P. A1.2 with modifications)
(a)
Since total integrated charge in the region < 2 is zero, from Gausss Law it is
obvious that = 0 for > 2 . Similarly, we also ha
ECE441
Spring 2016
Assignment # 6
Date: February 26, 2016
Due: March 4, 2016
1.)
M&K P 5.12
2.)
Derive equation (5.2.9a) from (5.2.8) using (5.2.1), (5.2.2), (5.2.5), and (5.2.6).
3.)
An n-type silico