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ECE 535 (Fall 2013) HW #1
1. The dispersion relation for a diatomic chain is given by:
(
(
)
)
(
)
where, a = 0.6 nm, M1 = 2M2 = 50 mp is the mass of a proton .
(a) Given that the speed of sound in th
ECE 535 (Fall 2012) HW #1 Solution
1. By using Hamiltonian canonical equations (1.1) & (1.2) in Prof. Hesss
book, derive the expression of the Lorentz force for a particle of charge
e
F =e E + B
v
(1)
ECE 535 (Fall 2013) HW # 3
Due: Friday, Sept. 20, 2013
1.
The interface between a semiconductor and an insulator can be approximated by an infinite
triangular well. The potential is given by:
( )
wher
ECE 535 (Fall 2012) HW #7 Solution
1. Consider a SiO2 /Si interface perpendicular to the [100] direction in Si. Derive the
expression for the density of state of a two-dimensional electron gas in each
ECE 535 (Fall 2012) HW #7
Due: Friday, October 19.
1. Consider a SiO2 /Si interface perpendicular to the [100] direction in Si. Derive the
expression for the density of state of a two-dimensional elec
CHAPTER
14
LASER DIODES
Semiconductor laser diodes, and particularly those containing a quantum well as
the active region for light generation, form a prime example of the combination
of classical and
CHAPTER
15
TRANSISTORS
Transistors (transfer resistors) are the most important of all solid-state devices
and distinguish themselves from the diodes by having a third terminal. In 1947,
John Bardeen a
CHAPTER
16
FUTURE SEMICONDUCTOR
DEVICES AND THEIR
SIMULATION
16.1
NEW TYPES OF DEVICES
Semiconductor devices havebeen developed and proposed in the firsthalf of the
twentieth century with the declared
cfw_
Error that all of us did (me as well): when we integrate over angle, remember that we are doing
integration in the same direction for both k< and k> - either counter clock wise or clock wise bu
ECE 535 (Fall 2013) HW #12
Due Dec. 6
1. The book derives jLR expression Eq. (10.6), for 3-D. Derive it for 1-D system and
compare with Eq. (8.64). Discuss the physical reason for the difference.
2. P
CHAPTER
13
DIODES
We have already discussed simple diodes (two-terminal devices) in Chapters 11
and 12, and have developed some of the theoretical concepts that are important for their understanding.
CHAPTER
12
NUMERICAL DEVICE
SIMULATIONS
12.1 GENERAL CONSIDERATIONS
It is clear from the previous chapters, that the simultaneous solution of the equations of Poisson and continuity for the electron a
CHAPTER
1
A BRIEF REVIEW OF THE
RELEVANT BASIC
EQUATIONS OF PHYSICS
From a mathematical viewpoint, all equations of physics (both microscopic and
macroscopic) are relevant for semiconductor devices. I
CHAPTER
3
THE THEORY OF ENERGY
BANDS IN CRYSTALS
3.1 COUPLING ATOMS
In Chapter 2 we hinted at a band structure for the E(k) relation from rather
formal arguments. We now introduce the bands from pheno
CHAPTER
11
THE DEVICE EQUATIONS
OF SHOCKLEY AND
STRATTON
To calculate the electronic current in a semiconductor device, we need to solve
the Boltzmann equation subject to (usually very complicated) bo
CHAPTER
7
SCATTERING THEORY
7.1 GENERAL CONSIDERATIONS-DRUDE THEORY
A precise knowledge of the motionand scattering of electrons is necessary to understand the conductivity of a solid. One wouldthink
CHAPTER
9
GENERATIONRECOMBINATION
Generation-recombination (GR) processes are scattering processes similar to
those described in Chapter 7 and can usually be calculated in a similar fashion;
that is,
CHAPTER
6
SELF-CONSISTENT
POTENTIALS AND
DIELECTRIC PROPERTIES
OF SEMICONDUCTORS
As indicated at the end of Chapter 5, the calculation of electron and hole densities
becomes far more involved if the d
CHAPTER
5
EQUILIBRIUM STATISTICS
FOR ELECTRONS AND
HOLES
Although we discussed the energy band structure (the electronic states) of a semiconductor in detail in the previous chapters, we did not inclu
ECE 535 (Fall 2013) HW#8
Due: Friday, Oct. 25th
1. A Silicon sample is doped with Gallium concentration of 1017 cm-3 having a binding energy of
65 meV.
a) Find the analytical expression for the Fermi
ECE 535 (Fall 2013) HW #2
Due Friday September 13th
1. Harmonic Oscillator: A harmonic oscillator has the following potential:
( )
The wave function corresponding to this oscillator is given by:
( )
(
ECE 535 (Fall 2013) HW #8
Due: Friday, Nov. 1
1.
a ) Calculate the scattering probability S(k , k`) for a scattering potential:
= 0
()
for a 2D system.
b) Use the result from part (1a) to calculate t
ECE 535 HW # 7
Due Friday Oct. 18, 2013
1. Consider a SiO2/Si interface perpendicular to the [100] direction in Si. Derive the expression for the
density of state of a two-dimensional electron gas in
[CE 5&5 Hmwm Ia Saleem
1. The wavefunction of electrons in their ground state at the heterointerface of a semiconductor (z 2 0)
is given by
1/1(z) %ze bf 220
0 z<0
The semiconductor is p-doped.
(a) Fi