HW1 solution
Constants:
1.5 1010 cm3
0.0259V when T = 300K
Si 11.70 where 0 8.85 1012 F/m
1. Sol:
a) From the problem 1, we have
= 5 1019 cm3
= 2 1018 cm3
= 5 1016 cm3
= 0.7V, = 1V
= 150, = 100
The built-in potential for both junctions are:
,
ln
EE121B Spring 2013
Home Work #1
1. A silicon p-n-p transistor has impurity concentrations of 5x1019, 2x1018, and 5x1016 cm-3 in
the emitter, base, and collector, respectively. The emitter and base widths are 150 nm and 100
nm respectively. The device cros
EE121B Semiconductor Devices
Jason C.S. Woo
University of California, Los Angeles
Electrical Engineering
What so important about Electronics?
)
Point Contact
Transistor
Intel corei7
Jason Woo
EE121B Spring 2012
Moores Law
Gordon Moore Electronics, Volume
EE 121B
Principles of Semiconductor Device Design Metal-Oxide-Semiconductor Transistors - I
Professor Chi On Chui
Electrical Engineering Department University of California, Los Angeles Email: [email protected]
EE 121B Chi On Chui
2006 Marko Sokolich All
MOS Capacitor
Metal
SiO2
G
Si
Sub
Note that there is not a DC current between the gate, G, and
the substrate, sub, since SiO2 is an almost-perfect insulator.
Jason Woo
1
EE121B Spring 2012
Band-diagram of MOSCAP
4.1eV
EC
1.2eV
S
EFS
EV
)
EFm
4.55eV
tox
Ja
EE121B Homework #8
MOSFET current in linear region
6.20 Sketch the cross section of an n-channel enhancement-mode Si MOSFET. It has a channel
length of 2m, width of 5m, high-k gate dielectric of thickness 10nm with a relative dielectric
constant of 25 and
EE121B Homework 2
Band diagram and doping concentration
4.5 An intrinsic Si sample is doped with donors from one side such that Nd = N0 exp(-ax),
(a) Find an expression for the built-in electric field at equilibrium over the range for which Nd>ni
(b) Eval
EE121B Homework 2
Band diagram and doping concentration
Prob. 4.5
Find expression for
(a)
(x) =
(b)
( x) , solve at
a
1
m
, and sketch the band diagram indicating
.
-ax
D n n
kT N o -a e
kT a
x =
=
-ax
n n
q
No e
q
depends on a but not x or No
(1
1
m
EE121B Homework #3 Solution
Band diagram and depletion approximation
5.15 Boron is implanted into an n-type Si sample (Nd=1016 cm3), forming an abrupt junction of
square cross section with area = 2 X 10-3 cm2. Assume that the acceptor concentration in the
EE 121 Lecture 9 (10 24 2016)
Subu Iyer
10/24/2016
EE121 B 2016 (iyer)
1
Recap
Small signal model
Switching transients
Quiz results
Today:
A quick study of Schottky ohmic
and tunneling contacts
MOS capacitor
10/24/2016
EE121 B 2016 (iyer)
2
Metal se
EE 121B Fall 2016 HW5
Homework week 5 (First half, covered Chapter 9.2, 10.1.1-10.1.6, and lecture 10)
Submit your work in a pdf file electronically in the CCLE website before Oct.30, 6pm. Late homework will
not get credit! Each problem is 1 point unless
EE 121 Lecture 8 (10 19 2016)
Subu Iyer
10/12/16
EE121 B 2016 (iyer)
1
Recap
Discussed the effect of temperature
Short Diodes
Recombination - Generation SRH model
Diode leakage
High injection & Ideality factor
Small signal model
10/12/16
EE121 B 2016 (iye
EE 121B Fall 2016
HW1 Solution
Homework week 1 (covered Chapter 3.1.1, 3.2, 3.4, 3.5, 4.1)
Submit your work in a pdf file electronically in the CCLE website before Oct.2 6pm. Late homework will
not get credit! Each problem is 1 point unless specified. Use
EE 121B Fall 2016 HW3
Homework Week 3 Solution
Submit your work in a pdf file electronically in the CCLE website before Oct.16 6pm. Late homework will
not get credit! Each problem is 1 point unless specified.
1. (6.26 of the textbook) Consider the n-type
EE121 B
Fall 2016
Instructor Subramanian Iyer ([email protected]) office hours Tuesdays 2-3 pm and
by appointment. Office Engineering IV 56-147H
TA Zhe Frank Wan ([email protected])
Textbook: Donald Neamen, Semiconductor Physics and Devices (McGraw Hill)
EE 121B Fall 2016 HW2
Homework week 2 Solution
Submit your work in a pdf file electronically in the CCLE website before Oct.9 6pm. Late homework will
not get credit! Each problem is 1 point unless specified. Use = 2.8 1019 3 at 300K
1. (a) Name a material
EE 121B Fall 2016 HW3
Homework Week 3 Solution
Submit your work in a pdf file electronically in the CCLE website before Oct.16 6pm. Late homework will
not get credit! Each problem is 1 point unless specified.
1. (6.26 of the textbook) Consider the n-type
Name:
UID:
EE 121B Quiz 1
You have 1 hour to finish the quiz. There are four problems and each is 25% of the total grade. For
problem 3, pick one from A ,B and C.
Use T=300K unless specified otherwise. Make appropriate assumptions when necessary.
Constant
EE 121B Fall 2016 HW4
Homework week 4 (Covered Chapter 8.2-8.4, 9.1)
Submit your work in a pdf file electronically in the CCLE website before Oct.23 6pm. Late homework will
not get credit! Each problem is 1 point unless specified.
1.
(8.34 from the book)
EE 121 Lecture 10 (10 26 2016)
Subu Iyer
10/26/2016
EE121 B 2016 (iyer)
1
Accumulation (V<0)
equilibrium
E
qm
p-type
q q
s
Ec
EFm
10/26/2016
q F
Ei
EFs
Ev
EFm
EE121 B 2016 (iyer)
q|V|
Ec
q F
Ei
EFs
Ev
2
Depletion (V>0)
equilibrium
E
qm
q q
s
Ec
Ec
EFm
q F
EE 121B Fall 2016 HW9
Homework week 9 first half (Covered 12.3, 12.5.1 and lecture 17)
Submit your work in a pdf file electronically in the CCLE website before Nov. 27, 6pm. Late homework
will not get credit! Each problem is 1 point unless specified.
1. C