EE 121B
Principles of Semiconductor Device Design MetalOxideSemiconductor Transistors  I
Professor Chi On Chui
Electrical Engineering Department University of California, Los Angeles Email: chui@ee.ucla.edu
EE 121B Chi On Chui
2006 Marko Sokolich All
EE121B Semiconductor Devices
Jason C.S. Woo
University of California, Los Angeles
Electrical Engineering
What so important about Electronics?
)
Point Contact
Transistor
Intel corei7
Jason Woo
EE121B Spring 2012
Moores Law
Gordon Moore Electronics, Volume
HW1 solution
Constants:
1.5 1010 cm3
0.0259V when T = 300K
Si 11.70 where 0 8.85 1012 F/m
1. Sol:
a) From the problem 1, we have
= 5 1019 cm3
= 2 1018 cm3
= 5 1016 cm3
= 0.7V, = 1V
= 150, = 100
The builtin potential for both junctions are:
,
ln
MOS Capacitor
Metal
SiO2
G
Si
Sub
Note that there is not a DC current between the gate, G, and
the substrate, sub, since SiO2 is an almostperfect insulator.
Jason Woo
1
EE121B Spring 2012
Banddiagram of MOSCAP
4.1eV
EC
1.2eV
S
EFS
EV
)
EFm
4.55eV
tox
Ja
EE121B Homework 2
Band diagram and doping concentration
Prob. 4.5
Find expression for
(a)
(x) =
(b)
( x) , solve at
a
1
m
, and sketch the band diagram indicating
.
ax
D n n
kT N o a e
kT a
x =
=
ax
n n
q
No e
q
depends on a but not x or No
(1
1
m
EE121B Homework 2
Band diagram and doping concentration
4.5 An intrinsic Si sample is doped with donors from one side such that Nd = N0 exp(ax),
(a) Find an expression for the builtin electric field at equilibrium over the range for which Nd>ni
(b) Eval
EE121B Homework #8
MOSFET current in linear region
6.20 Sketch the cross section of an nchannel enhancementmode Si MOSFET. It has a channel
length of 2m, width of 5m, highk gate dielectric of thickness 10nm with a relative dielectric
constant of 25 and
EE121B Homework #3 Solution
Band diagram and depletion approximation
5.15 Boron is implanted into an ntype Si sample (Nd=1016 cm3), forming an abrupt junction of
square cross section with area = 2 X 103 cm2. Assume that the acceptor concentration in the
EE 121B Fall 2016
HW1 Solution
Homework week 1 (covered Chapter 3.1.1, 3.2, 3.4, 3.5, 4.1)
Submit your work in a pdf file electronically in the CCLE website before Oct.2 6pm. Late homework will
not get credit! Each problem is 1 point unless specified. Use
EE 121 Lecture 5 (10 10 2016)
Subu Iyer
10/3/16
EE121 B 2016 (iyer)
1
Recap
We looked at semiconductors that were not in
equilibrium
Ambipolar diusion equaHon / ambipolar
transport
Excess carrier concentraHon
Minority carrier properHes are
EE 121 Lecture 4 (10 05 2016)
Subu Iyer
10/3/16
EE121 B 2016 (iyer)
1
Carrier Diffusion
10/3/16
EE121 B 2016 (iyer)
2
Electron and hole diffusion currents

10/3/16
EE121 B 2016 (iyer)
3
Total Current density
10/3/16
EE121 B 2016 (iyer)
4
Graded Impurity
EE121 B
Fall 2016
Instructor Subramanian Iyer (s.s.iyer@ucla.edu) oce hours Tuesdays 23 pm and
by appointment. Oce Engineering IV 56147H
TA Zhe Frank Wan (z.wan@ucla.edu)
Textbook: Donald Neamen, Semiconductor Physics and Devices (McGraw Hill)
EE 121B Syllabus
Instructor: Prof. Subramanian Iyer (s.s.iyer@ucla.edu)
TA: Zhe Frank Wan (z.wan@ucla.edu)
Textbook
Semiconductor Physics and Devices  Basic Principles by Donald A. Neamen, Fourth Edition, McGraw
Hill 2012
Time Commitment
4 hours of clas
Solution:
4:
(a) For a given process technology (i.e. fixed values of effective gateoxide thickness Toxe,
channel/body doping NB, and source/drain extension junction depth rj) the depletion widths
of the sourcechannel and drainchannel pn junctions are
Name:
UID:
EE 121B Quiz 1
You have 1 hour to finish the quiz. There are four problems and each is 25% of the total grade. For
problem 3, pick one from A ,B and C.
Use T=300K unless specified otherwise. Make appropriate assumptions when necessary.
Constant
EE 121B Fall 2016 HW4
Homework week 4 (Covered Chapter 8.28.4, 9.1)
Submit your work in a pdf file electronically in the CCLE website before Oct.23 6pm. Late homework will
not get credit! Each problem is 1 point unless specified.
1.
(8.34 from the book)
EE 121 Lecture 10 (10 26 2016)
Subu Iyer
10/26/2016
EE121 B 2016 (iyer)
1
Accumulation (V<0)
equilibrium
E
qm
ptype
q q
s
Ec
EFm
10/26/2016
q F
Ei
EFs
Ev
EFm
EE121 B 2016 (iyer)
qV
Ec
q F
Ei
EFs
Ev
2
Depletion (V>0)
equilibrium
E
qm
q q
s
Ec
Ec
EFm
q F
EE 121B Fall 2016 HW3
Homework Week 3 Solution
Submit your work in a pdf file electronically in the CCLE website before Oct.16 6pm. Late homework will
not get credit! Each problem is 1 point unless specified.
1. (6.26 of the textbook) Consider the ntype
EE 121B Fall 2016 HW2
Homework week 2 Solution
Submit your work in a pdf file electronically in the CCLE website before Oct.9 6pm. Late homework will
not get credit! Each problem is 1 point unless specified. Use = 2.8 1019 3 at 300K
1. (a) Name a material
EE121 B
Fall 2016
Instructor Subramanian Iyer (s.s.iyer@ucla.edu) office hours Tuesdays 23 pm and
by appointment. Office Engineering IV 56147H
TA Zhe Frank Wan (z.wan@ucla.edu)
Textbook: Donald Neamen, Semiconductor Physics and Devices (McGraw Hill)
EE 121B Fall 2016 HW6
Homework week 6 Solution
Submit your work in a pdf file electronically in the CCLE website before Nov. 6, 6pm. Late homework will
not get credit! Each problem is 1 point unless specified.
1. (2pts)(a) Draw a low frequency () characte
EE 121B Fall 2016 HW2
Homework week 2 Solution
Submit your work in a pdf file electronically in the CCLE website before Oct.9 6pm. Late homework will
not get credit! Each problem is 1 point unless specified. Use = 2.8 1019 3 at 300K
1. (a) Name a material
EE 121B Fall 2016 HW5
Homework week 5 Solution
Submit your work in a pdf file electronically in the CCLE website before Oct.30, 6pm. Late homework
will not get credit! Each problem is 1 point unless specified.
1.
(a) What are the two types of metalsemico
EE 121B Fall 2016 HW7
Homework week 7 Solution
Submit your work in a pdf file electronically in the CCLE website before Nov. 13, 6pm. Late homework
will not get credit! Each problem is 1 point unless specified.
1. (10.56) An nchannel MOSFET has the follo