Design Project
Design Project-1
Design Project Information and Guidelines
Overview of Electronic Circuit Design
Introduction
Design is what engineers do for a living. This is what all of the physical and
mathematical theory, software tools, and laboratory
Experiment-1
Experiment-1
2-Terminal Device Characteristics and Diode Characterization
Introduction
The objectives of this experiment are to learn methods for characterizing 2terminal devices, such as diodes, observe some fundamental trends in the
charact
Experiment-0
Experiment-0
Laboratory Preliminaries and Data Acquisition Using LabVIEW
Introduction
The objectives of the first part of this experiment are to introduce the
laboratory transformer and to show how to operate the oscilloscope as a curve
trace
Experiment-2
Experiment-2
Diode Circuit Applications
Introduction
The objectives of this experiment are to observe the operating characteristics
of several very common diode circuits and the effects of non-ideal diode
characteristics on their performance.
Experiment-3
Experiment-3
JFET and MOSFET Characterization
Introduction
The objectives of this experiment are to observe the operating characteristics
of junction field-effect transistors (JFETs) and metal-oxide-semiconductor
field-effect transistors (MOS
EE 331 Spring 2014
Homework #2 Solutions
Problem 1
Problem 2
Problem 3
Problem 4
Total current in a device is the sum of drift and
diffusion currents for the two types of carriers:
electrons and holes.
Drift current happens whenever there is an
electric f
Homework 9 Solutions
1. For the circuit as shown below, the two gates are connected together. We
consider that both the NMOSs are working in the triode region. For the transistor,
0, so
; for the upper transistor,
, so
. Denote the voltage on the intermed
Homework 7 Solutions
1. J&B P6.20
(a) The rise time of the RC charging will follow the expression
1
1 V
Let
be the time at which the output rises up to 10% of its final value, and let
be the time at which it rises up to 90% of its final value. The rise ti
Homework 6 Solutions
1. J&B P6.39
2.5 . When
(a) Resistor load Inverter,
For
,
.
, in triode region, equate the drain current and solve for the equation
1
2
0.022
12.4
30.98
400
(b) Change
and
6, applied same method used in (a)
0.0055
6.2
15.59
2.
Homework 5 Solutions
1. J&B P4.27
2 , 0
, NMOS is in the saturation region,
3.3 , 0
, NMOS is in the saturation region,
6.5
,
13
2. J&B P4.40
(a) The +10 V supply makes the source the pin with the arrow, as labeled in the
figure.
0. Guess saturation t
Homework 3 Solutions
1. J&B P3.83
9 V. Thus,
When the Zener diode is regulating, the voltage across it will be
the voltage across the 15 resistor will be 30 9 21 V. The current flowing
through that resistor is then
21
15
1.4 mA
The current flowing b
Homework 1 Solutions
1 J&B P2.5(a)
1.66 22 cm
5 10
93.9
2 J&B P2.6
Intrinsic carrier concentration is given by
0.66
for germanium,
(a) At 77 K,
2.63
2.31
,
10
cm
10 cm
(b) At 300 K,
2.27
10 cm
(a) At 500 K,
8.04
10
3 J&B P2.16
Maximum hole curre
Lab 4: FET Driver, Load, and Switch Circuits
Yunie Yi, Brian Tsang
Section AA
Procedure 1: E-Mode MOSFET Driver with Resistor Load
Figure 1: CD4007 Output Graph
Figure 2: Oscilloscope Output, 2 div lower than actual value
(a) In your notebook, first discu