Fundamental Theory of
PMOS LowDropout Voltage
Regulators
Application
Report
April 1999
Mixed-Signal Products
SLVA068
IMPORTANT NOTICE
Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue
any pro
ECE6422
Interface IC Design for MEMS and Sensors
Fall 2016
HOMEWORK 2 SOLUTIONS
Problem 1 (30 points total)
Following the equations given in the paper we have:
L
1
r!"#
A !" = ( )!" =
ln
= 0.11
W
2
r!"
R !" = R
ECE6422
Interface IC Design for MEMS & Sensors
Fall 2016
HOMEWORK #3
(DUE: 10/04/16 IN CLASS)
1.
Circuit Noise Calculations: A two-stage MOS amplifier is shown below. Note that the first stage
incorporates diode-connected rather than c
MEMS-Recongurable Microwave Power
Ampliers
by
Patrick J. Bell
B.S., University of Virginia, 2001
M.S., University of Colorado at Boulder, 2003
A thesis submitted to the
Faculty of the Graduate School of the
University of Colorado in partial fulllment
of t
2166
IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 41, NO. 9, SEPTEMBER 2006
Adaptive Multi-Band Multi-Mode Power Amplier
Using Integrated Varactor-Based Tunable
Matching Networks
W. C. Edmund Neo, Student Member, IEEE, Yu Lin, Xiao-dong Liu, Leo C. N. de Vr
Proceedings of the 37th European Microwave Conference
MEMS-based Reconfigurable RF Front-end
Architecture for Future Band-free Mobile Terminals
Hiroshi Okazaki, Atsushi Fukuda, Kunihiro Kawai, Takayuki Furuta, and Shoichi Narahashi
Research Laboratories,
Proceedings of the 36th European Microwave Conference
A Novel Compact Reconfigurable Quad-band Power Amplifier
Employing RF-MEMS Switches
Atsushi Fukuda, Hiroshi Okazaki, and Shoichi Narahashi
NTT DoCoMo, Inc. Yokosuka, Kanagawa, 239-8536, Japan
Phone: +8
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 53, NO. 3, MARCH 2005
1089
An Intelligently Controlled RF Power Amplier
With a Recongurable MEMS-Varactor Tuner
Dongjiang Qiao, Member, IEEE, Robert Molno, Steven M. Lardizabal, Member, IEEE, Bran
ECE6422
Interface IC Design for MEMS & Sensors
Fall 2016
HOMEWORK 5
(DUE: 11/10/2016 IN CLASS)
1.
Noise in TIA: The objective of this problem is to analyze and simulate the noise behavior of a
feedback transimpedance
ECE6422
Interface IC Design for MEMS & Sensors
Fall 2016
HOMEWORK #4
(DUE: 10/27/16 IN CLASS)
1.
Noise Simulation in Cadence: Consider the simple differential amplifier shown in the Figure below.
Assume the NMOS transistors to be 1.5m
ECE6422
Interface IC Design for MEMS and Sensors
Fall 2016
Homework 5 Solution
(Total 200 points)
Problem 1.
(80 points)
Part a. (10 points)
The simulated opamp voltage transfer function shows a dc gain of about 58dB and a unity gain
frequency of about 29
ECE6422
Interface IC Design for MEMS & Sensors
Fall 2016
HOMEWORK 6 SOLUTION
(DUE: 12/01/2016)
Problem 1 (120 pts.)
a.
Themotional resistance of the resonator is given by:
Rm vd is
2
Since is is proportional to Vp , Rm is inversely proportional to Vp2. Th
ECE6422
Interface IC Design for MEMS and Sensors
Fall 2016
Homework 4 Solutions
Problem 1 (70 pts.)
a. The 3-dB bandwidth of the amplifier was approximately 1MHz and the dc gain was close to
16dB for a bias curr
ECE6422
Interface IC Design for MEMS & Sensors
Fall 2016
HOMEWORK 6
(DUE: 11/29/2016 IN CLASS)
1.
Capacitive resonator circuit model: The figure below shows the structure of a capacitive SiBAR resonator.
The dimensions
ECE6422
Interface IC Design for MEMS & Sensors
Fall 2016
HOMEWORK 1
(DUE: THURSDAY 9/15 IN CLASS)
1.
Accelerometer noise floor: Consider an MEMS accelerometer with an effective mass of M = 0.1
mg, the suspension
ECE6422
Interface IC Design for MEMS and Sensors
Fall 2016
HOMEWORK 3 SOLUTIONS
Problem 1 (40 pts.)
Applying the half-circuit principle, it can be seen that each circuit consists of a cascade of two
common-s
ECE6422
Interface IC Design for MEMS and Sensors
Fall 2016
Homework 1 Solutions
Problem 1 (10 pts.)
(1) Considering Brownian noise as the only mechanical force applied to the accelerometer, the minimum
detectabl
ECE6422
Interface IC Design for MEMS & Sensors
Fall 2016
HOMEWORK #2
(DUE: 09/29/2016 IN CLASS)
1.
Circular Thermopile Design: A thermopile is integrated in a closed silicon membrane. The
membrane is monocrystalline s
2532
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 60, NO. 8, AUGUST 2012
A Multiband Recongurable Power Amplier
for UMTS Handset Applications
Unha Kim, Student Member, IEEE, Sungyoon Kang, Jungrin Woo, Student Member, IEEE,
Youngwoo Kwon, Se
A 435-MHz 24-dBm CLASS AB POWER AMPLIFIER IN 0.5-pm STANDARD
CMOS
Ahmet Tekin, Douglas Huang, Ertan Zencir, John Cothern, Numan S. Dogan, Mohammed Ketel and
Abdollah Homaifar
North Carolina A&T State University, Dept. of ECE, Greensboro, NC, USA.
E-mail:
Proceedings of the 4th European Microwave Integrated Circuits Conference
Tunable Microwave Amplifier Using a Compact
MEMS Impedance Matching Network
Frdric Domingue#1, Ammar B. Kouki#2, Raafat R. Mansour*3
#
LACIME Laboratory - cole de technologie suprieu
EE215C
Win. 10
B. Razavi
HO #2
Low-Noise Amplifiers
Design Specs
Noise Figure: requires very low noise in the input device. For a simple
CS stage, the transistor gm must exceed 1/(25 ohms) if the noise
figure is to remain below 2 dB.
Exercise: calculate
www.ietdl.org
Published in IET Microwaves, Antennas & Propagation
Received on 31st October 2007
Revised on 18th March 2008
doi: 10.1049/iet-map:20070272
ISSN 1751-8725
5.25 GHz CMOS cascode power amplier
for 802.11a wireless local area network
S.H.-L. Tu1
Lateral DC Contact RF MEMS Switch with Fine
Gap Combs
Sungchan Kang, Hyeon Cheol Kim and Kukjin Chun, Senior Member, IEEE
School of Electrical Engineering and Computer Sciences
Seoul National University
301-1053(#038), Kwanak P.O. box 34, Seoul, 151-742,
CMOS-MEMS Tuning and Impedance Matching Circuits for
Recongurable RF Front-Ends
Center
Siamak Fouladi , Fr d ric Domingue , Raafat Mansour
ee
for Integrated RF Engineering (CIRFE), Waterloo, ON, Canada, N2L 3G1
`
du Qu bec a Trois-Rivi` res, Trois-Rivi`
20dBm CMOS Class AB Power Amplifier
Design for Low Cost 2GHz-2.45GHz Consumer
Applications in a 0.13um Technology
Vincent Knopik, Baudouin Martineau, Didier Belot
STMicroelectronics Central R&D
850 rue Jean Monnet 38926 Crolles, France
[email protected]
1 4 & % 4 4
Capacitive and Resistive RF-MEMS switches
2.5D & 3D Electromagnetic and Circuit
Modelling
M.A. Llamas1, D. Girbau2, E.Pausas1, L. Pradell1, S. Aouba3, C. Villeneuve3, V. Puyal3, P. Pons3, R.
Plana3, S. Colpo4 and F. Giacomozzi4
1
Signal Theory
