AHA/7
o I :-
/0/000/°r Pk Lam/Eve 0N TOP 0!? x4 075190; 510% My?
PfL
iiiaij:
5;:
() If $0 1) OF THE WI'QSK. {5 5'51ng 135" THE EN?
0 F THE 5101 Eran (NHHT' is Saarid? A? 141/49? 705101 a
0
2
ECE 5310
1)
2)
3)
4)
5)
6)
HW 2 Due on Friday Feb. 1, 2013
A Si crystal doped with boron is to have a resistivity of 5.0 Ohmcm when
exactly half the crystal has been grown. If the Si in the melt weigh
Spring13 ECE 5310 VLSI TECHNOLOGY Exam 2
Name: Sam
£13 pTS -
Problem 1. PhoSphorous is implanted through a masking oxide into a Si substrate. The oxide
mask is 0.15e-4 cm thick. Assume that the oxide
02/13 ECE5310 Examl Name: zmiau
You have 75 minutes to complete this exam. You can use a calculator and a sheet of
equations. Partial credit will be given for all correctly completed work. State all a
ECE 5310 VLSI Processing HW5 Due: Friday March 15, 2013
Problem 1) implant P at a dose of 1012 atoms/cm2 and an energy of 200 KeV. Assume that the
dopant is activated by a RTA such that no further dif
ECE 5310 VLSI PROCESSING
HW3 Due: Friday Feb. 8, 2013
1) Problem 6.6 in our book
2) Problem 6.9
3) Problem 6.10
4) Problem 6.11
5) Problem 6.13
6) Problem 6.15 moans/n 6.6
L
1 /rw
6/975 OXIDE ARE}; =
ECB 5310 HW4 _ Due Friday Feb. 22, 2013
T o calculate diffusivity use Table 7.5 page 411 in our book.
Problem 1. Predeposition. Assume a constant surface concentration during
the diffusion where Cs= t