ECB 5310 HW4 _ Due Friday Feb. 22, 2013
T o calculate diffusivity use Table 7.5 page 411 in our book.
Problem 1. Predeposition. Assume a constant surface concentration during
the diffusion where Cs= the electrically active solid solubility limit (Fig. 7-7
02/13 ECE5310 Examl Name: zmiau
You have 75 minutes to complete this exam. You can use a calculator and a sheet of
equations. Partial credit will be given for all correctly completed work. State all assumptions.
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Problem 1. You are a process engi
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ECE 5310
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HW 2 Due on Friday Feb. 1, 2013
A Si crystal doped with boron is to have a resistivity of 5.0 Ohmcm when
exactly half the crystal has been grown. If the Si in the melt weighs 80 kg,
how many grams of boron-doped Si with a resist
ECE 5310 VLSI Processing HW5 Due: Friday March 15, 2013
Problem 1) implant P at a dose of 1012 atoms/cm2 and an energy of 200 KeV. Assume that the
dopant is activated by a RTA such that no further diffusion occurs.
a) Sketch the dopant profile, calculatin
ECE 5310 VLSI PROCESSING
HW3 Due: Friday Feb. 8, 2013
1) Problem 6.6 in our book
2) Problem 6.9
3) Problem 6.10
4) Problem 6.11
5) Problem 6.13
6) Problem 6.15 moans/n 6.6
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Spring13 ECE 5310 VLSI TECHNOLOGY Exam 2
Name: Sam
£13 pTS -
Problem 1. PhoSphorous is implanted through a masking oxide into a Si substrate. The oxide
mask is 0.15e-4 cm thick. Assume that the oxide and Si have identical implant statistics for R9
and ARp