Homework 4 A silicon pn diode maintained at 300K has a doping of N a =3x1018 cm3 and N d =1.0x1016 cm3 and mobilities in the two regions of n =1000 cm2/VSec, p =200 cm2/VSec, minority carrier lifetimes in the two regions of n =10 S p =1.2 S. 1) What
ECE 3040 Homework 3
The goal of this homework is to design a photocell (also known as a photoelectric cell or photoelectric resistor) that will respond to light and change its resistance. This device may be used in a later homework problem. The photocell
ECE 3040 Homework 2 1) Purpose: Understanding what the fermidistribution function is telling us. The fermidistribution function depicted in Figure 2.15 describes the probability that a state is occupied at a given energy. Plot the probability that a sta
ECE 3040 Homework 1 1) Given the IVIV compound semiconductor SixGe1x (assume that covalent bonds exist although strictly speaking this is not entirely true) and that energy bandgaps and lattice constants scale linearly, a) What is the lattice constant a
ECE 3040 Dr. Alan Doolittle I have thoroughly enjoyed meeting each of you and hope that I have had a positive influence on your carriers. Please feel free to consult with me in your future work. If I can help you in any way, please come by and talk. Also,

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ECE 3040 Microelectronic Circuits
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Nov 2 5,2009
Dr. W. A lan Doolittle
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ECE 3040 Microelectronic Circuits
Exam 2
April 5, 2011
Dr. W. Alan Doolittle
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Number of Tests
7
6
5
4
~C's
3
~D's
2
~A's
~B's
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1
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0
20
40
60
80
100
Test Score
Class Totals
Problem # =>
Number of Tests=
57
Point Value of problem=
Individual Problem Average=
Exam Average=
52.6
Exam Standard Deviation=
17.4
Exam Max=
95.0
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ECE 3040B Microelectronic Circuits
Exam 2
July 3, 2001
Dr. W. Alan Doolittle
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Instructions:
Read all the problems carefully and thoroughly before you begin working. You are
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ECE 3040 Microelectronic Circuits
E xam 2
October 26, 2009
Dr. W. A lan Doolittle
Print your name clearly and largely:
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Instructions:
Read all the problems carefully and thoroughly before you begin working. DO NOT
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