HW #1 Solution :
Problem #1, Given the table of NMOS threshold voltages for measured 250nm devices below find the VT mean, standard
deviation, variance, and model the data as a Gaussian function. Find
EEL 5322 VLSI Circuits and Technology Final Exam, 2013
Open Note, Open Book, 120 Minutes, 100 points, 5 Problems
PROBLEM I: (25 Points)
Static Complementary CMOS Gates
ANSWERS MUST BE PLACED ON THE
EEL 5322 VLSI Circuits and Technology Final Exam, 2010
Open Note, Open Book, 120 Minutes, 100 points, 5 Problems
PROBLEM 1: (30 Points)
Static Complementary CMOS Gates
NAME:
UFID:
.
.
ANSWERS MUST BE
EEL 5322 VLSI Circuits and Technology Final Exam, 2011
Open Note, Open Book, 120 Minutes, 100 points, 5 Problems
PROBLEM 1: (25 Points)
Static Complementary CMOS Gates
NAME:
UFID:
.
.
ANSWERS MUST BE
EEL 5322 VLSI Circuits and Technology Final Exam, 2013
Open Note, Open Book, 120 Minutes, 100 points, 5 Problems
PROBLEM 1: (25 Points)
Static Complementary CMOS Gates
NAME:
UFID:
.
.
ANSWERS MUST BE
EEL 5322 VLSI Circuits and Technology Final Exam, 2009
Open Note, Open Book, 120 Minutes, 100 points, 5 Problems
PROBLEM l: (30 Points) . NAME:
UFID: .
Static Complementary CMOS Gates
ANSWERS MUST BE
EEL 5322 VLSI Circuits and Technology Final Exam, 2011
Open Note, Open Book, 120 Minutes, 100 points, 5 Problems
PROBLEM 1: (25 Points) NAME: A Sh/L47 V 1&-
Static Complementary CMOS Gates . UFlD: .
A
EEL 5322 VLSI Circuits and Technology Exam II
Open Note, Open Book, 60 Minutes, 100 points, 11/14/2014
PROBLEM I: [40 Points! NAMEAZI sway k .
UFID: .
Include your full Surname/Family name!
General In
EEL 5322 VLSI Circuits and Technology Exam I, 2014
Open Note, Open Book, 60 Minutes, 100 points
" r' y sway £2,
PROBLEM 1: (50 Points! NAME:
Etch and CMP Calculation UFID:
General Instructions: Due
Announcements
Sunday, October 23, 2011
8:13 PM
Exam 2 examples are Posted on Sakai.
Exam 2 date will be on November 14 for one hour.
Exam 2 will cover material presented in Lecture
Notes 14 to Lecture
Key Deep Scalable
CMOS Design Rules
well taps
3
4
nFET?
p-well
2
n-well
6
3
pFET?
How to identify n and pFET?
Can draw Ndiff and Pdiff
Discuss why space different and how determined
Modern node 28nm
1Course Number & Name: EEL 4310 and EEL5322 - Digital Integrated Circuits Design
Credits and Contact Hours: 3 crs; 3 classes per week of 50 minutes each
Instructors or Course Coordinators Name: Dr. Sc
Announcements
Tuesday, October 18, 2011
8:58 PM
Today's lectures are in class here. I will not be here on
Friday.
Friday's lecture will be pre-recorded on today at 8th period
in NEB 201 and available
Announcements
Sunday, October 16, 2011
8:24 PM
Monday and Wednesday lectures are in class here. I will
not be here on Friday.
Friday's lecture will be pre-recorded on Wednesday 8th
period and availabl
Announcements
Friday, September 30, 2011
6:29 PM
This week we have University of Florida Homecoming Holiday on Friday.
So, you have Friday class off.
Progress is being made on the Midterm Grading.
I w
EEL 5322 VLSI Circuits and Technology Final Exam, 2012
Open Note, Open Book, 120 Minutes, 100 points, 5 Problems
PROBLEM 1: (25 Points)
Static Complementary CMOS Gates
NAME:
UFID:
.
.
ANSWERS MUST BE
EEE 5322
W.R. Eisenstadt
-1-
VLSI Class Notes Fall 2013, Class 13
Quote of the day from famed New York Yankees Catcher, World Series Manager and
humorist Yogi Berra, He hits from both sides of the pla
United States Patent [191
Rodgers
1541 LOW CAPACITANCE V GROOVE MOS NOR
[751
[731
[221
1211
1621
[521
1511
1581
1561
3.355.598
GATE AND METHOD OF MANUFACTURE
Thurman J. Rodgers, Palo Alto,
Calif.
Am
EEE 5322
W.R. Eisenstadt
-1-
VLSI Class Notes Fall 2014, Class 12
Quote of the day from famed New York Yankees Catcher, World Series Manager and
humorist Yogi Berra, Every Napoleon has his Watergate.
United States Patent [19]
Cheung et al.
[54]
[75]
[73]
[21]
[22]
[51]
[52]
[58]
[56]
PROCESSING TECHNIQUES FOR
ACHIEVING PRODUCTION-WORTHY, LOW
DIELECTRIC, LOW INTERCONNECT
RESISTANCE AND HIGH PERFO
EEE 5322
W.R. Eisenstadt
-1-
VLSI Class Note, Class 11, Fall 2014
Quote of the day from famed New York Yankees Catcher, World Series Manager and
humorist Yogi Berra, Half the lies they tell about me a
EEE 5322
W.R. Eisenstadt
-1-
VLSI Class Notes 10, Fall 2014,
Quote of the day from famed New York Yankees Catcher, World Series Manager and
humorist Yogi Berra, I never said most of the things I said.
EEE 5322
W.R. Eisenstadt
-1-
VLSI Class Notes Fall 2014, Class 5
Reading Today: Jaeger Chap. 4.1, 4.2, 4.3
Quote of the day from famed New York Yankees Catcher, World Series Manager and
humorist Yogi
Statement Giving Permission to Return Assignments and
Quizzes During EEE 5322 Class
I give Prof. William Eisenstadt and his Grader permission to return
my graded homework EEE 5322 assignments, compute
(1) A nMOS transistor with n+ polysilicon gate doped 3 x1020 cm-3 is fabricated with 8nm gate oxide
thickness and a substrate doping 2 x1016 cm-3. Calculate the VT of this transistor
If an SOC process
Homework 4 solutions
Problem 1: Drawn a circuit for a 16 bit SRAM with all key blocks (bit cell, decoders, drivers, sense amp, pre-charge circuit, etc.)
Few possibilities for a 16bit SRAM
4x4 or 1x16
HW 1
Problem 1
Shown is the layout for a NAND gate.
(1)
List all the "mask" in fabrication process flow order required to fabricate the
NAND gate. List the mask in process order (I.e. 1st mask to last
EEL 5322 VLSI Circuits and Technology Final Exam, 2010
Open Note, Open Book, 120 Minutes, 100 points, 5 Problems
NAMEamkey/
PROBLEM I: (30 Points)
Static Complementary CMOS Gates UF ID:
ANSWERS MUST B