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EECS 523 W07: Digital IC Technology
Name_
Midterm #1: February 19, 2007
Instructions
Read all of the instructions before beginning the exam.
You must sign the Honor Pledge below to receive credit for
University of Michigan
Department of Electrical Engineering and Computer Science
EECS 523
HW#4
Fall 2012
Due (at the beginning of the class): October 30
1 A 0.5m thin poly has been implanted with bot
University of Michigan
Department of Electrical Engineering and Computer Science
EECS 523
HW # 1 _Fall 2012
Due (at the beginning of the class): September 25
Use the data given in the table below to c
University of Michigan
Department of Electrical Engineering and Computer Science
EECS 523
HW # 3
Fall 2012
Due (at the beginning of class): Thursday, October 18
1 A conformal layer of polysilicon is
CHAPTERS
Ion Implantation
Ion implantation offers many advantages over diffusion for the introduction of impurity
atoms into the silicon wafer and has become a workhorse technology in modern IC fabr
EECS 523 Fall 2017 Homework 1
Nianchen Wu (unique name: wnc)
Problem 1:
During the 1970s, the dominant logic technology was NMOS. The depletion mode device is identical to the enhancement mode
device
Scattering Theory of the MOSFETs
CHIHYU SUN
University of Michigan
EECS523
November 21, 2017
1
University of Michigan
Electrical Engineering and Computer Science
outline
scaling of I(sat) with L
Balli
10/18/2017
EECS 523
Fall 2017
Long Channel MOSFET
Current Voltage Characteristics
Prof. Jerzy Kanicki
Y. Taur and T.H. Ning textbook, chapter 3, pp. 148
to 172.
1
Outline
1) Introduction
2) Square law
12/6/2017
EECS 523
Fall 2017
SilicononInsulator Devices
Prof. Jerzy Kanicki
1
Outline
1. Introduction
2. Partially Depleted SOI MOSFETS
Fully Depleted SOI MOSFETS
3. Double Gate (DG) SOI MOSFETS
4.
10/18/2017
EECS 523
Fall 2017
CMOS Device Design:
MOSFET Threshold Voltage
Engineering
Prof. Jerzy Kanicki
1
Objective
The doping profiles in modern MOSFETs are complex.
Our goal is to develop an in
11/6/2017
EECS 523
Fall 2017
CMOS Device Design and
Performance Factors: MOSFET
Series Resistance and Effective
Channel Length
Prof. Jerzy Kanicki
1
Outline
1) MOSFET Series Resistance
2)Series Resist
EECS 523
Digital Integrated Technology
Fall 2015
COURSE INFORMATION
Instructor:
Prof. G. Roientan Lahiji,
Office: 3213 EECS
Email: [email protected]
Lecture:
Room 1200 EECS, Tuesday and Thursday 1:00
University of Michigan
Department of Electrical Engineering and Computer Science
EECS 523
HW # 3
Fall 2015
Due (at the beginning of class): Thursday, October 15
1 A conformal layer of polysilicon is
EECS 523
Digital Integrated Circuit Technology
Winter 2007
PROBLEM SET 2
Issued: Tuesday, February 6, 2007
Due (at the beginning of class): Monday, February 19, 2007
The following pages comprise an ac
EECS 523
Digital Integrated Circuit Technology
Winter 2007
PROBLEM SET 5
Issued: Monday, April 9, 2007 Due (at the beginning of class): Monday, April 16, 2007
1. Derive an expression for the current,
EECS 523
Digital Integrated Circuit Technology
Winter 2007
PROBLEM SET 4
Issued: Tuesday, March 20, 2007
Due (at the beginning of class): Tuesday, March 27, 2007
1. Show that the output resistance of
EECS 523
Digital Integrated Circuit Technology
Winter 2007
PROBLEM SET 3
Issued: Tuesday, March 6, 2007
Due (at the beginning of class): Monday, March 19, 2007
1. For a longchannel MOSFET with channe
EECS427 CAD4
Arithmetic and Logic Unit (ALU)
Fall 2015
Assignment
Design a 16bit ALU which will be used in the datapath of the microprocessor. This ALU must support
twos complement arithmetic and the
The Roadmap to Success:
2013 ITRS Update
Paolo Gargini
Chairman ITRS
Fellow IEEE
February 7th, 2014
IEEE Seminars
IEEE March 11, 2014
P.Gargini
1
Brief Paolos History
Early 70s:
Stanford Researcher
INTERNATIONAL
TECHNOLOGY ROADMAP
FOR
SEMICONDUCTORS
2011 EDITION
PROCESS INTEGRATION, DEVICES, AND
STRUCTURES
THE ITRS IS DEVISED AND INTENDED FOR TECHNOLOGY ASSESSMENT ONLY AND IS WITHOUT REGARD TO A
Please go over these papers, which you can download from
University of Michigan Library (Mirlyn), IEEE Xplore.
1 Extreme scaling with ultrathin Si channel MOSFETs
Doris, B. ; Meikei Ieong ; Kanarsky
University of Michigan
Department of Electrical Engineering and Computer Science
EECS 523 _ HW # 2 _Fall 2015
Due (at the beginning of the class): October 1
Use table 3.1 in oxidation posted handout i
11/20/2017
EECS 523
Fall 2017
CMOS Performance Factors:
Gate resistance and
Interconnects
Prof. Jerzy Kanicki
1
Outline
1) Gate Resistance
2) Interconnect Capacitance and Inductance
3) Interconnect De
EECS 523
Fall 2017
Due Date: 12 (Tuesday) December at midnight
Problem #1. Problem 4.2 from textbook, p. 254
Problem #2. Problem 4.5 from textbook, p. 254
Problem #3. Problem 4.10 from textbook, p. 25
EECS 523
Fall 2017
Due Date: 30 (Thursday) November at midnight
Problem #1. Problem 3.1 from textbook, p. 201
Problem #2. Problem 3.3 form textbook, p. 202
Problem #3. Consider an NMOS transistor with