ECE 235, HW-2
Spring 2016
1.
Consider a uniformly doped nMOSFET of Na = 1018 cm-3 biased at the threshold
condition. Calculate the first three quantum mechanical energy levels for inversion electrons
ITRS Roadmap of CMOS Generations
Minimuum Featurre (m)
General litho
?
year
4/28/2014
1
Limit of Bulk CMOS Scaling
Quantum mechanical tunneling
Gate insulator
Band to band (Zener)
Source to drain
ECE 235, HW-3
Spring 2016
1. Consider a symmetric double-gate nMOSFET with tox=2(nm), tsi=10(nm). The gate workfunctions
are qm = 4.33(eV ) (half way between n+ Si and intrinsic Si).
(a) Plot Ids vs.
ECE 235, HW-4
Spring 2016
1. Explain the Inverter-1 transfer curve of SRAM cell during a WRITE operation.
Solution:
When the input voltage to the inverter on the left is zero, Q1 is off and Q3 is on.
ECE 235, HW-1
Spring 2016
1.
In the parabolic potential model, the solution to
2 2
q
+ 2 =
Na
2
x
y
si
is assumed to be of the form ( x, y ) = a ( y ) + a ( y ) x + a ( y ) x 2
0
1
2
Apply the top a
ECE 235, HW-2
Spring 2016
1.
Consider a uniformly doped nMOSFET of Na = 1018 cm-3 biased at the threshold
condition. Calculate the first three quantum mechanical energy levels for inversion electrons
ECE 235, HW-1
Spring 2016
1.
In the parabolic potential model, the solution to
2 2
q
+ 2 =
Na
2
si
x
y
is assumed to be of the form ( x, y ) = a ( y ) + a ( y ) x + a ( y ) x 2
0
1
2
Apply the top a
ECE 235, HW-3
Spring 2016
1. Consider a symmetric double-gate nMOSFET with tox=2(nm), tsi=10(nm). The gate workfunctions
are qm = 4.33(eV ) (half way between n+ Si and intrinsic Si).
(a) Plot Ids vs.
ECE 235, HW-4
Spring 2016
1. Explain the Inverter-1 transfer curve of SRAM cell during a WRITE operation.
2. Consider an nMOS floating gate NVRAM device with 12 nm thick interpoly oxide between the
co
ECE 235: Spring 2016
N
Nanometer-Scale
t S l VLSI Devices
D i
Professor Yuan Taur
Electrical & Computer Engineering
University of California, San Diego
3/27/2016
Yuan Taur
1
ECE 235: Spring 2016
Nanom