Whites, EE 320
Lecture 30
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Lecture 30: Biasing MOSFET
Amplifiers. MOSFET Current Mirrors.
There are two different environments in which MOSFET
amplifiers are found, (1) discrete circuits an
5.3 MOSFET Circuits at DC
reader a familiarity with the device and the ability to perform MOSFET circuit analysis both
rapidly and effectively.
In the following examples, to keep matters simple and th
Review for Final Exam
MOSFET and BJT
Basis of amplifiers
Obtaining linear amplification
Small-signal voltage Gain
Equivalent-circuit models: model and T model
Basic configurations and Biasing
Analyze
ECE 333 Linear Electronics
Chapter 7 Transistor Amplifiers
How a MOSFET or BJT can be used to make an
amplifier linear amplification model the linear
operation Three basic ways Practical circuits by
d
ECE 333 Linear Electronics
Chapter 4 Diodes
Ideal diode real Si diode diode circuits device
modeling serve as a foundation for modeling
transistors and circuits in future chapters
1
4.1 The Ideal Diod
Exercise 51
Ex: 5.1
ox
34.5 pF/m
=
= 8.625 fF/m2
Cox =
tox
4 nm
Similarly, VDS = 1 V results in saturation-mode
operation and ID = 0.25 mA.
n = 450 cm2 /V S
Ex: 5.6 VA = VA L = 50 0.8 = 40 V
k n = n C
ECE 333 Linear Electronics
Chapter 5 MOS Field-Effect Transistors (MOSFETs)
Why MOSFETs Device Structure Physical Operation
I-V Characteristics MOSFET Circuits at DC The
Body Effect and Other Topics
Exercise 41
Ex: 4.1 Refer to Fig. 4.3(a). For v I 0, the
diode conducts and presents a zero voltage drop.
Thus v O = v I . For v I < 0, the diode is cut off,
zero current ows through R, and v O = 0. T
15.4 Emitter-Coupled Logic (ECL) 47
15.4 Emitter-Coupled Logic (ECL)
Emitter-coupled logic (ECL) is the fastest logic circuit family available for conventional
4
logic-system design. High speed is ach
ECE 333 Linear Electronics
Chapter Bipolar Junction Transistors (BJTs)
Physical structure of BJT I-V Characteristics
circuits based on BJTs
Compared with MOSFETs
1
Introduction
The invention of BJT
Chapter 1 Electrons and Holes
in Semiconductors
1.1 Silicon Crystal Structure
Unit cell of silicon crystal is
cubic.
Each Si atom has 4 nearest
neighbors.
Modern Semiconductor Devices for Integrated C
Exercise 71
Ex: 7.1 Refer to Fig. 7.2(a) and 7.2(b).
Av = k n VOV RD
Coordinates of point A: Vt and VDD ; thus 0.4 V
and 1.8 V. To determine the coordinates of
point B, we use Eqs. (7.7) and (7.8) as