EE 301
Lab 1: Basic Circuit Laws
Objective
The objective of this lab is for the student to learn fundamental electrical laboratory skills (using a
breadboard to construct and test circuits, making measurements with a multimeter) and to confirm
basic circu
1) Chapter 8, Solution 1.
(a)
At t = 0-, the circuit has reached steady state so that the equivalent circuit is
shown in Figure (a).
6
VS
+
6
6
+
+
vL
10 H
(a)
10 F
v
(b)
i(0-) = 12/6 = 2A, v(0-) = 12V
At t = 0+, i(0+) = i(0-) = 2A, v(0+) = v(0-) = 12V
(b
1) 7.11
24
0 =
(48)
(48) + 4 24
=
= 1.2
8
20
For t >0, we have a source-free RL circuit.
L
4
1/ 3
R 48
io(t) io(0)et / 1.4118e3t A
2) 7.19
To find R th we replace the inductor by a 1-V voltage source as shown above.
But
i.e.
10 i1 1 40 i 2 0
and
i i2 i
1) 6.46
Under dc conditions, the circuit is as shown below:
2
iL
+
vC
4
6A
By current division,
iL
4
(6) 4A,
42
wL
vc = 0V
1 2 11 2
L i (4) 4 J
2 L 2 2
1
1
w c C vc2 (2)(0) 2 0 J
2
2
2) 6. 48
Under steady-state, the inductor acts like a short-circuit, w
EE 301
Lab 3: Basic Operational Amplifier Circuits
Objective:
To verify the operation of operational amplifier (op amp) circuits.
Equipment and Parts List:
Protoboard, Power Supplies, Multimeter (DMM), OpAmps and Resistors.
Part I. Summing Amplifier
Figur
This is a simple tutorial on using the new Cadence version 6. This tutorial covers setting up the
environment, and designing two simple circuits and their simulations.
First, log into a computer in the lab or your own laptop (needs to be connected to the
1) Chapter 8, Solution 32.
For t = 0-, the equivalent circuit is shown below.
4A
i
+
v
6
i(0) = 0, v(0) = 4x6 = 24V
For t > 0, we have a series RLC circuit with a step input.
= R/(2L) = 6/2 = 3, o = 1/ LC 1 / 0.04
s = 3 9 25 3 j4
Thus, v(t) = Vf + [(Acos
EE 301 Sample Final Exam
Open book, open notes.
Calculator allowed.
You get credit for your derivations. So, justify all your work and clearly show your derivations
and results.
Clearly write your name on every page you hand in.
Name:_
Problem
Worth
1
16
1) 5. 40
Long Method:
Short Method: It is a inverting amplifier. Use superposition, then voltage division. The
result will be as follows:
40
200
200
= (
) [
1 +
]
40 + 10
100
100 2
2) 5. 52
3) 5. 65
The output of the first op amp (to the left) is 6 mV.
EE 301 - Exam 2
Sample Exam
Open book, open notes.
Calculator allowed.
You get credit for your derivations. So, justify all your work and clearly show your derivations
and results.
Clearly write your name on every page you hand in.
Name:_
Problem
Worth
1
ECE102 (Fall 2012), Solution of the Final
Problem 1. Find the mid-band gain and the lower cut-off frequency of the amplifier
below (n Cox (W/L) = 20 mA/V2 , Vt = 0.6 V, = 0, and Cc1 = Cc2 = 1 F).
Bias: (VG = 1.8 V because IG = 0)
1.8 V
50k
1.8 = VOV + Vt
Electronics Homework Set #4
Chapter 2: # 14, 15, 22, 25, 44, 47, 51, 75
Problem 2.14
Determine the closed-loop gain of the circuit shown below, assuming an ideal op amp. All of the
resisors are equal in value.
Solution: Let's number the resitors and their
EE 321 Analog Electronics, Fall 2011
Homework #5 solution
3.37. Find the parameters of a piecewise-linear model of a diode for which vD =
0.7 V at iD = 1 mA and n = 2. The model is to fit exactly at 1 mA and 10 mA.
Calculate the error in millivolts in pre
I slamic U
U niversity of G aza
Faculty Of Engineering
Dep art me nt Of ELE CT R I CAL Eng ine ering
ELECTR O NI C CI RCUI TS
EELE 2 310 / EE LE 2 32 1
Final Examination
Instructor. : Jawdat Abu Taha.
1
Time : 2 2 Hours
Student name :
ID:
For all question
Noise in Circuits
These slides are based mostly on slides EE214B slides
by Prof. Murmann and the book by Carusone,Johns
and Martin, Analog Integrated Circuit Design
Electronic Noise
Noise in components
Resistors
MOSFETs
BJTs
Noise analysis in circuit
Feedback
These slides are based mostly on the book by
Sedra and Smith, Microelectronic Circuits
Introduction
Most physical systems incorporate some sort of
feedback.
Although theory of negative feedback was developed by
electrical engineers.
Harold Bla
Low Frequency Distortion
Analysis
These slides are based mostly on slides EE214B slides
by Prof. Murmann and the book by Carusone,Johns
and Martin, Analog Integrated Circuit Design
Introduction
All electronic circuits exhibit some level of nonlinear beha
ECE102 (Fall 2011), Solution of the Final
Problem 1. Find the mid-band gain and fH of the amplifier below. (|Vtp | = Vtn =
0.5 V, n Cox (W/L) = p Cox (W/L) = 4 mA/V2 , n = 0.1/V, p = 0.1/V, Cgs = 20fF,
Cgd = Csb = Cdb = 5 fF).
This is a NMOS CS amplifier
ECE102 (Fall 2012), Quiz 1 Solution
Problem 1. Find gain, Ri and Ro in the circuit below with RL = 10 k, VS = 1 V,
n Cox = 400 /V2 , (W/L) = 1/0.1, and = 0.1 /V. Assume capacitors are large.
1V
Bias:
2k
vo
VS (1.5) = 103 ID
ID = 10
ID =
3
R1
(1 + 1.5) =
Chapter 10:
MetalOxideSemiconductor Field-Effect Transistor (MOSFET)
Preview:
Study the characteristics of energy bands as a function of applied voltage in
the metaloxidesemiconductor structure known as the MOS capacitor. The
MOS capacitor is the heart o
Chapter 6: Nonequilibrium excess carriers in semiconductors
Nonequilibrium: Presence of external forces such as voltages, electric
fields, magnetic fields, temperature gradients, or light (excitation) acting
on the semiconductor
Preview:
Describe the pro
Chapter 9: Metal-Semiconductor and
Semiconductor Heterojunctions
Preview:
Determine the energy-band diagram of a metal-semiconductor
junction.
Investigate the electrostatics of the rectifying metal-semiconductor
junction which is known as the Schottky b
Chapter 2: Introduction to Quantum Mechanics
Preview:
Basic principles of quantum mechanics and applications to
semiconductor device physics
Schroedingers wave equation and the physical meaning of the
wave function
Electron in a single / periodic poten
Chapter 4: Semiconductor in Equilibrium
Equilibrium: No external forces such as voltages, electric
fields, magnetic fields or temperature gradients acting on the
semiconductor
Preview:
Derive the thermal-equilibrium concentrations of electrons and holes
EE 311: Introduction to Electronic Devices
Fall 2015 T 5-7pm and R 5-6pm West Campus #1003
One 100-minute, one 50-minute lecture per week
Grade = 10% attendance, 10% HW, 45% Midterm (2 x 22.5%), 35% Final
Midterms:
Tuesday, Nov 10, 5-6:30pm (in classr
Chapter 5: Carrier Transport Phenomena
Transport: The process by which the charge carriers (electrons and holes)
move and generate currents.
Two basic transport mechanisms in semiconductor crystals:
Drift movement of charge due to electric fields
Diffusio
Chapter 8: pn Junction Diode
Preview:
Consider the process by which the potential barrier of a pn junction is
lowered when a forward-bias voltage is applied, so holes and electrons can
flow across the junction generating a diode current.
Derive the boun
Chapter 7: pn Junction
Preview:
Consider a uniformly doped pn junction, in which one region of the
semiconductor is uniformly doped with acceptor atoms and the adjacent
region is uniformly doped with donor atoms.
Determine the energy-band diagram of a p
Chapter 3: Introduction to Quantum Theory of Solids
Preview:
Concept of allowed and forbidden electron energy bands in a singlecrystal material
Conduction and valence energy bands in a semiconductor material
Concept of electrons (negatively charged) an