EE 301
Lab 1: Basic Circuit Laws
Objective
The objective of this lab is for the student to learn fundamental electrical laboratory skills (using a
breadboard to construct and test circuits, making mea
1) Chapter 8, Solution 1.
(a)
At t = 0-, the circuit has reached steady state so that the equivalent circuit is
shown in Figure (a).
6
VS
+
6
6
+
+
vL
10 H
(a)
10 F
v
(b)
i(0-) = 12/6 = 2A, v(0-) = 12
1) 7.11
24
0 =
(48)
(48) + 4 24
=
= 1.2
8
20
For t >0, we have a source-free RL circuit.
L
4
1/ 3
R 48
io(t) io(0)et / 1.4118e3t A
2) 7.19
To find R th we replace the inductor by a 1-V voltage sourc
1) 6.46
Under dc conditions, the circuit is as shown below:
2
iL
+
vC
4
6A
By current division,
iL
4
(6) 4A,
42
wL
vc = 0V
1 2 11 2
L i (4) 4 J
2 L 2 2
1
1
w c C vc2 (2)(0) 2 0 J
2
2
2) 6. 48
Under
EE 301
Lab 3: Basic Operational Amplifier Circuits
Objective:
To verify the operation of operational amplifier (op amp) circuits.
Equipment and Parts List:
Protoboard, Power Supplies, Multimeter (DMM)
This is a simple tutorial on using the new Cadence version 6. This tutorial covers setting up the
environment, and designing two simple circuits and their simulations.
First, log into a computer in th
1) Chapter 8, Solution 32.
For t = 0-, the equivalent circuit is shown below.
4A
i
+
v
6
i(0) = 0, v(0) = 4x6 = 24V
For t > 0, we have a series RLC circuit with a step input.
= R/(2L) = 6/2 = 3, o =
EE 301 Sample Final Exam
Open book, open notes.
Calculator allowed.
You get credit for your derivations. So, justify all your work and clearly show your derivations
and results.
Clearly write your nam
1) 5. 40
Long Method:
Short Method: It is a inverting amplifier. Use superposition, then voltage division. The
result will be as follows:
40
200
200
= (
) [
1 +
]
40 + 10
100
100 2
2) 5. 52
3) 5. 65
EE 301 - Exam 2
Sample Exam
Open book, open notes.
Calculator allowed.
You get credit for your derivations. So, justify all your work and clearly show your derivations
and results.
Clearly write your
ECE102 (Fall 2012), Solution of the Final
Problem 1. Find the mid-band gain and the lower cut-off frequency of the amplifier
below (n Cox (W/L) = 20 mA/V2 , Vt = 0.6 V, = 0, and Cc1 = Cc2 = 1 F).
Bias
Electronics Homework Set #4
Chapter 2: # 14, 15, 22, 25, 44, 47, 51, 75
Problem 2.14
Determine the closed-loop gain of the circuit shown below, assuming an ideal op amp. All of the
resisors are equal
EE 321 Analog Electronics, Fall 2011
Homework #5 solution
3.37. Find the parameters of a piecewise-linear model of a diode for which vD =
0.7 V at iD = 1 mA and n = 2. The model is to fit exactly at 1
I slamic U
U niversity of G aza
Faculty Of Engineering
Dep art me nt Of ELE CT R I CAL Eng ine ering
ELECTR O NI C CI RCUI TS
EELE 2 310 / EE LE 2 32 1
Final Examination
Instructor. : Jawdat Abu Taha.
Noise in Circuits
These slides are based mostly on slides EE214B slides
by Prof. Murmann and the book by Carusone,Johns
and Martin, Analog Integrated Circuit Design
Electronic Noise
Noise in componen
Feedback
These slides are based mostly on the book by
Sedra and Smith, Microelectronic Circuits
Introduction
Most physical systems incorporate some sort of
feedback.
Although theory of negative feed
Low Frequency Distortion
Analysis
These slides are based mostly on slides EE214B slides
by Prof. Murmann and the book by Carusone,Johns
and Martin, Analog Integrated Circuit Design
Introduction
All e
ECE102 (Fall 2011), Solution of the Final
Problem 1. Find the mid-band gain and fH of the amplifier below. (|Vtp | = Vtn =
0.5 V, n Cox (W/L) = p Cox (W/L) = 4 mA/V2 , n = 0.1/V, p = 0.1/V, Cgs = 20fF
ECE102 (Fall 2012), Quiz 1 Solution
Problem 1. Find gain, Ri and Ro in the circuit below with RL = 10 k, VS = 1 V,
n Cox = 400 /V2 , (W/L) = 1/0.1, and = 0.1 /V. Assume capacitors are large.
1V
Bias:
Chapter 10:
MetalOxideSemiconductor Field-Effect Transistor (MOSFET)
Preview:
Study the characteristics of energy bands as a function of applied voltage in
the metaloxidesemiconductor structure known
Chapter 6: Nonequilibrium excess carriers in semiconductors
Nonequilibrium: Presence of external forces such as voltages, electric
fields, magnetic fields, temperature gradients, or light (excitation)
Chapter 9: Metal-Semiconductor and
Semiconductor Heterojunctions
Preview:
Determine the energy-band diagram of a metal-semiconductor
junction.
Investigate the electrostatics of the rectifying metal-
Chapter 2: Introduction to Quantum Mechanics
Preview:
Basic principles of quantum mechanics and applications to
semiconductor device physics
Schroedingers wave equation and the physical meaning of t
Chapter 4: Semiconductor in Equilibrium
Equilibrium: No external forces such as voltages, electric
fields, magnetic fields or temperature gradients acting on the
semiconductor
Preview:
Derive the the
EE 311: Introduction to Electronic Devices
Fall 2015 T 5-7pm and R 5-6pm West Campus #1003
One 100-minute, one 50-minute lecture per week
Grade = 10% attendance, 10% HW, 45% Midterm (2 x 22.5%), 35%
Chapter 5: Carrier Transport Phenomena
Transport: The process by which the charge carriers (electrons and holes)
move and generate currents.
Two basic transport mechanisms in semiconductor crystals:
D
Chapter 8: pn Junction Diode
Preview:
Consider the process by which the potential barrier of a pn junction is
lowered when a forward-bias voltage is applied, so holes and electrons can
flow across th
Chapter 7: pn Junction
Preview:
Consider a uniformly doped pn junction, in which one region of the
semiconductor is uniformly doped with acceptor atoms and the adjacent
region is uniformly doped with
Chapter 3: Introduction to Quantum Theory of Solids
Preview:
Concept of allowed and forbidden electron energy bands in a singlecrystal material
Conduction and valence energy bands in a semiconductor