BEFORE WE BEGIN
EE 430/530: Fundamentals of Solid-State Devices
Spring 2014
Class Schedule:
Instructor:
Office Hours:
Teaching Assistant:
10:30 11:50, Mon. & Weds., NSC 222
Jonathan Bird
Wed. 13.00 14
EE 430/530: HOMEWORK SET #6
1.
(a) Under reverse biasing, what processes occur in the quasi-neutral regions adjacent to the depletion
region edges.
(b) Why cant the minority-carrier diffusion equation
EE 430/530: HOMEWORK SET #5
1. The x > 0 portion of a uniformly-doped n-type silicon sample is illuminated with light, generating GL =
1015 electron-hole pairs per cm3 per second uniformly throughout
EE 430/530: HOMEWORK SET #3
1.
(a) Given the electron mobility in silicon at room temperature (1300 cm 2/Vs) determine the electron
diffusion coefficient.
(b) What is the algebraic statement of low-le
EE 430/530: HOMEWORK SET #4
1. Consider the minority-carrier diffusion equation for electrons.
(a) Why is this called a diffusion equation?
(b) Why is this referred to as a minority-carrier equation?
EE 430/530: HOMEWORK SET #2
1. The density of states in the conduction band of a hypothetical semiconductor is gc(E) = Nc/kBT.
(a) Assuming the semiconductor is non-degenerate, sketch the electron dis
EE 430/530: HOMEWORK SET #1
Includes: Review of Concepts from EE 421/563
1. The lattice constant of Ge at room temperature is 5.65 10 -8 cm. Determine the number of Ge atoms
per cubic centimeter.
2.
(
FINAL EXAM EE 430/530: FUNDAMENTALS OF SOLID-STATE DEVICES
rd
FRIDAY MAY 3 , 11:45 13:45 (TWO HOURS), NORTON 209
NAME: _
COURSE SECTION: EE 430/530 (PLEASE INDICATE)
ALL QUESTIONS MUST BE ANSWERED ON
EE 430/530: FUNDAMENTALS OF SOLID-STATE DEVICES
IN-CLASS EXAM #2, THURSDAY APRIL 25
th
NAME: _
COURSE SECTION: EE 430/530 (PLEASE INDICATE)
ALL QUESTIONS MUST BE ANSWERED ON THE PAGES PROVIDED. WHEN N
EE 430/530: HOMEWORK SET #7
1. A pn junction with Vbi = 0.7 V and a minority carrier lifetime of 100 ns conducts a forward bias current of
4.3 mA. At time t = 0, the circuit conditions change so that
EE 430/530: HOMEWORK SET #8
1. The common emitter gain of a BJT operating as a voltage-controlled current source is = 450.
Calculate the base and emitter current if the collector current is 1 mA. What
Homework #1
1. A Push pull inverter consist of an NMOS and PMOS operating at the same
time. The NMOS gives a strong 0 and the PMOS gives a strong 1.
Figure 1. Inverter Schematic
Figure 2. Inverter Lay
Subject 24: Outline
MOSFETs in Modern Microelectronics
* Digital circuits
* CMOS
The CMOS inverter
* Modern transistor structure
Spring 2014
EE 430/530: Fundamentals of Solid-State Devices
Subject 24
EE 430/530: HOMEWORK SET #9
1. Consider a MOS capacitor with:
(a) F = 18(kBT/q), s = 9(kBT/q).
(b) F = -12(kBT/q), s = 0(kBT/q).
(c) F = 12(kBT/q), s = 24(kBT/q).
For each of these cases, indicate whe
EE 430/530: HOMEWORK SET #10
1. In the following you should assume that you are dealing with an ideal metal-semiconductor junction (i.e.
no Fermi-level pinning).
(a) What is the dominant current compo
EE 430/530: HOMEWORK SET #11
1. Consider an n-channel MOSFET at 300 K with Z = 10 m, L = 1 m, xo = 0.02 m, NA = 4 1014 cm-3,
and effective mobility 700 cm2/Vs (assumed independent of gate voltage). Ca
EE 430/530: HOMEWORK SET #10
1.
(a) Why are the current-carrying contacts of the MOSFET referred to as the source and drain?
(b) What is the channel in a MOSFET?
(c) When referring to the MOSFET curre
EE 430/530: FUNDAMENTALS OF SOLID-STATE DEVICES
IN-CLASS EXAM #1, THURSDAY MARCH 10
th
NAME: _
COURSE SECTION: EE 430/530 (PLEASE INDICATE)
ALL QUESTIONS MUST BE ANSWERED ON THE PAGES PROVIDED. WHEN N
Subject 11: Outline
Rectification in pn Junctions
* The rectifier equation
* Electron and hole currents
* R-G currents
Spring 2014
EE 430/530: Fundamentals of Solid-State Devices
Subject 11, Slide 1/1
Subject 9: Outline
pn-Junction Electrostatics
* pn-junction electrostatics
Electric field & built-in voltage
* Biasing of pn junctions
Forward and reverse biasing
Spring 2014
EE 430/530: Fundamental
Subject 10: Outline
Current Flow in pn Junctions
* Current flow in pn junctions
Drift and diffusion components
* pn-junction quasi-Fermi levels
Law of the junction
Spring 2014
EE 430/530: Fundamenta
Subject 5: Outline
Carrier Diffusion in Semiconductors
* Diffusion currents in semiconductors
* Current flow under equilibrium
* Fermi-level & thermal equilibrium
* The Einstein relation
* Space charg
Subject 4: Outline
Carrier Drift in Semiconductors
* Thermal motion of carriers
* Carrier drift in an electric field
* Carrier mobility
* Resistivity
* High-field transport phenomena
Velocity saturat
Subject 2: Outline
Carriers in Semiconductors
* Semiconductor carrier statistics
Density of states & Fermi function
* Doping semiconductors
* Doping semiconductors
Spring 2014
EE 430/530: Fundamental