.
= .
Solution
1|Page
2013
From the range and straggle curves, phosphorous values are
RP = 0.12 m
RP = 0.045 m
=
=
.
=.
The junction depth Xj can be calculated as following
=
(
)= .
.
(
.
)
=.
=
.
Refused
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2013
EE 432/532
Mid-term Mar. 7, 2012
Name_
1. In an oxidation system, increasing the gas pressure increases the parabolic reaction rate (by
increasing No). Of course, the furnace become a bit more complicated because the tube
needs to sealed up in order
EE 432532 Spring 2013
HW problem 7 Name(s) Q0 .
Due date: Wednesday. Feb. 2'?
During a fab process. an initial Gaussian diffusion of boron (Q = 1014 cmel. T = 1 100°C. t : 4.0
hr) is done into n-type silicon wafer (N3 = If)'5 cut-3.) Following that a
EE 432532 Spring 2013
HW problem 6
Due: Wed nesday. Feb. 27
Namets)
In making an NMOS transistor using a process similar to CyMOS, you use a mask that has a 3
pm separation between the source and drain (Le. the dream gate length is 3 lum). The source a
Solution
For Boron,
Do = 1 cm2/sec
T1 = 850 oC
EA = 3.5 eV
t1 = 1.25 hr
NB= 5 1016 cm-3
1- The diffusion step
To calculate the diffusion coefficient,
[
(
)]
(
)
(
)
The surface concentration can be calculated from the table as following;
(
)
The dose Q is