EE 201
Homework set A
Due: Jan. 24, 2014
Name_ Sec _
!
You can put your work and answer directly on these sheets. If you need extra sheet in order to show all
your work, be sure to attach those also. Be sure to include your supporting work! Rememb
EE 230 Quiz 2
Name: _
Section: _
ISU ID:_
1. For the circuit below, assuming an ideal op amp, find the currents through all branches and the
voltages at all nodes.
2. An amplifier with 40 dB of opencircuit voltage gain, an input resistance of 1 M, and an
EE 230 Exam 1 Spring 2010
NAME _
Instructions: The points allocated to each problem on this exam are as indicated. All work should be included on the exam itself. Attach additional sheets only if you run out of space on a problem. Students may bring 1 pag
EE 230
Homework set G
Due: Oct. 9, 2015
Name_ Sec _
You can put your work and answers directly on these sheets. If you need extra pages in order to show all
your work, be sure to attach those also. Be sure to include your supporting work! Remember: An
ans
EE 230 Lab 5
Measuring and Management of Operational Amplifier
Parameters
Brent Cornelius
Introduction:
The primary objective of this experiment is to investigate some of the performance
parameters that are commonly used to characterize the performance of
Lab #6 "Operational Amplifier Applications and Limitations" Lab Date: February 26th 2008. Report Date: March 4th 2008.
EE 230 Lab #6 Kyle Veugeler #345 Section: C Abstract: The purpose of Lab #6 was to observe the many behaviors of an operational am
EE 230 Spring 2013
Homework 2 solutions
1. Design an inverting opamp circuit for which the gain is  10 V/V and the total resistance used is
150 k.
R2=1500/11 k
R1=150/11 k
+

Vo
Vi
R
Vo
10 2 R2 10R1
Vi
R1
R1 R2 150 K R1
150
1500
, R2
11
11
2. The ci
EE 230 Name 0 [ca 79%
Quiz 8 June 2, 2016
Put your nal answers on this sheet and attach any additional sheets behind. You must include
your work to get full credit.
R
5000 + 2 /
. . . . 2 LC : L 'ZC
For the Circuit shown at right. V11
Bipolar junction transistors (BJTs)
First transistors  Bell Labs, 1947.
Threeterminal device. Currents owing can depend on two
voltages. Basic idea is to have current owing through one part
of the transistor depend on a voltage or current applied in
ano
Diodes
Simple twoterminal electronic devices.
Made of semiconducting materials: silicon, gallium arsenide, indium
phosphide, gallium nitride, etc. (EE 332 stuff.)
Semiconductors are interesting because their electrical properties can
be varied over many
Mf'iiuTth't WI 1' . .mem.
EE 230 Name 50 (WW
Quiz 15 June 21 , 2016
Put your nal answers on this sheet and attach any additional sheets behind. You must include
your work to get dl credit.
For the nonlinear oscillator at right, determine the value of
Feedback
With integrated circuit ampliers, it is possible to come close to ideal
characteristics.
Ri can be very large: 1 M 1 G
Ro can be quite small: 1 100
gain can be big
Generally, huge gain is not needed. 10 < A < 100 is usually adequate
in many appl
Bandwidth of op amps
An experiment  connect a simple noninverting op amp and measure
the frequency response. From the ideal op amp model, we expect the
amp to work at ay frequency. Is that what happens? Make a frequency
response plot to check it out.
+
Metal oxide semiconductor eld effect transistors (MOSFETs)
A newer form of transistor which has pretty much replaced BJT
technology for all digital applications and much of analog.
Basically, an FET is a resistor whose resistance can be controlled
through
Filter circuits
From our work with AC circuits, it should now be quite clear that the
behavior of the circuit depends critically on the frequency. The
impedance of the reactive elements varies dramatically with frequency.
As s 0, ZC . An open circuit.
=
A
Higher order lters
If we add more capacitors to the circuit, we can sharpen the transition
between the passband and the cutoff region.
R1
C1
+
R2
C2
+
Looks like two rstorder lowpass circuit stuck together. Pick your
favorite method to nd the output vo
BJT examples
For the circuit shown, use the exact BJT equations
to nd iC, iB, and vCE.
For the BJT, ISN = 1014 A and F = 100.
VBB
0.625 V
At room temperature, kT/q = 0.0258 V.
Assume forward active operation. vBE = VBB
=
=
=
exp
=
.
.
.
VCC 8 V
RC
2 k!
iB
NMOS examples
VDD = 10 V
For the circuit shown, use the the NMOS
equations to nd iD and vDS.
RD
2 k!
For the NMOS, VT = 1.5 V and K = 0.5 mA/V2.
VG
vGS = VG = 4 V the NMOS is on.
+
4V
Assume that the transistor is in saturation.
=
(
) =
=
=
=
.
[
.
( .
.
Nonideal aspects of opamps
Below is our circuit model for the ideal op amp.
v+
v
+
vi
+
+ Av
i
vo
A
Once again, for an ideal op amp: Ri , Ro = 0, A .
This leads to the two basic rules for using an ideal op amp in a circuit.
v+ v_ (virtual short)
i+ = i_
EE 230 Name 3 o (aim
Quiz 5 May 26, 2016
Put your nal answers on this sheet and attach any additional sheets behind. You must include
your work to get t credit.
Calculate the transfer function for the RK\L circuit below.
AUCQJM \/0 (fog/e.
vs(t) 9 J R vo(
Comparators
vi
vo
+Vp
+
+Vp
vo
Slope = G.
vi
Vn
R1
Vn
R2
Noninverting amp. G = 1+R2/R1. Assume a decent op amp with railtorail outputs.
vi
R1
EE 230
+Vp
+
vo
vo
R2
+Vp
vi
comparators 1
vo
X
+Vp
vi
For amplier applications, we try to stay
within the lin
Com S 311 Summer 2014 Quiz 3
Name_
Q1) Suppose you have a solver for the Independent Set as a DECISION problem. CLEARLY Explain how
you can use this solver to develop a solver for the Independent Set as a SEARCH problem.
EE 230 Name <0 /4 79W
QuizMay 31,2016
Put your nal answers on this sheet and attach any additional sheets behind. You must include
your work to get full credit.
For the lter circuit shown at right:
What type of lter is this? a C 74 't/e /()W 644 /$4
EE 230 Name WEE
Quiz 18  June 27, 2016
Put your nal answers on this sheet and attach any additional sheets behind. You must include
your work to get full credit.
Use the on/off model to nd the two resistor currents. Do the calculate twice, rst with Vs
i
it
i
i
EE 230 Name M_
Quiz 16 June 23, 2016
Put your nal answers on this sheet and attach any additional sheets behind. You must include
your work to get full credit.
A piece of silicon is doped ntype. The donor doping concentration is N p = 1x1017 c
BB 230 Name 3 J (fr'wv
Quiz 9  June 6, 2016
Put your nal answers on this sheet and attach any additional sheets behind. You must include
your work to get tll credit.
If the op amp on the circuit at right has an offset voltage
of 2.5 mV and bias currents
EE 230 NameASQQim_
Quiz 2 May 19, 2016
Put your nal answers on this sheet and attach any additional sheets behind. You must include
your work to get t credit.
You have three opamp feedback ampliers as shown. You would like to cascade these (one
after the
mud3113.15.52: umnmmmmwu
EE 230 Name 5 Q t ,2 cfw_QB _._.
Quiz 17  June 24, 2016
Put your nal answers on this sheet and attach any additional sheets behind. You must include
your work to get full credit.
Use the exact (ideal) diode equation to nd the vo
EE 230 Name 50 (a Aw
Quiz 3 May 24, 2016
Put your nal answer: on this sheer and attach any additional sheets behind. You must inciude
your work to gerdl credit.
Calculate the transfer function for each circuit below.
R
+
v50) C can)
._.
Trs) = Vim/m) = f
EE230LabLab7report
Report:Comparators
Labworkdoneby_
and_
Labworkdate:
Reportsubmissiondate:
LabSection:
Gradedby_
Score_
Introduction
1
EE230LabLab7report
A. Noninvertingcomparator
Part a: Observe the input and output together, then switch to xy mode
Pa
EE 230 Electronic Circuits & Systems
Fall 2016
Long Que, PhD
Announcements
Review: Basics of Amplifiers
Review: Amplifier power supplies
Amplifier saturation, linear region and distortion
Review: example
Operating Amplifier in Linear Region
Output signal
Welcome to
EE 230 Electronic Circuits & Systems
Fall 2016
Long Que, PhD
Course Information
Long Que, Instructor
Associate Prof., Electrical & Computer Engineering
2113 Coover Hall
lque@iastate.edu
Lab 2011 & 2014 Coover (west wing)
Lab Attendance is req