EE 332
Spring 2014
Quiz #2
Tuesday, February 04, 2014
Name:
NetID:
1. Please identify the type of bonding for the following materials:
Si
Steel
Ionic bonding
AgBr
SiC
GaAs
Sodium
Zinc
ZnS
Metallic
bonding
Covalent
bonding
LiF
2. In the following energy ba
EE 332
Spring 2014
Quiz #1
Tuesday, January 28, 2014
Name:
NetID:
1. Draw an sc, a bcc, and an fcc crystal. How many atoms are found inside a unit cell of an sc, a bcc,
and an fcc crystal? How far apart in terms of lattice constant a are the nearest neigh
(b) Calculate the recombination coefficient r for part (a).
(c) Assume that this value of r applies when the GaAs sample is uniformly exposed to a steady22
EE 332
3
state optical generation rate gop = 10 EHP/cm -s. Find the steady-state excess carrier
con
EE 332 Semiconductor Materials and Devices
Lecture 1. Introduction
1. Why Semiconductor
2. Course outline
3. Review Syllabus
3) Why are we here?
Why Study Electronic Devices?
They are the backbone of modern technology:
Consumable electronics
Computer
EE 332 Spring 2013
Problem #1 (p-n junction fundamental): The ﬁgure below is dimensioned plot of the
steady state carrier concentrations inside a p-n step junction diode maintained at room
temperature. Please take 11,- = 1.0 x 1010 cm'3, kT = 0.026 eV, an
EE 332
Spring 2013
Quiz #1
Monday, January 28, 2013
Name:
NetID:
1. How many atoms are there in the (110) plane for a silicon lattice? Calculate the areal density of
atoms (number/cm2) on the (110) plane.
2. Draw the plane in Cartesian coordinate that has
EE 332
Spring 2013
Quiz #2
Tuesday, February 05, 2013
Name:
NetID:
1. Please identify the type of bonding for the following materials:
Si
LiF
Ionic bonding
AgBr
SiC
GaAs
Sodium
Zinc
ZnS
Metallic
bonding
Covalent
bonding
Steel
2. In the following energy ba
EE 332
Spring 2013
Quiz #3
Thursday, February 14, 2013
Name:
NetID:
For problem 3 and 4, you can pick one to answer. If you answer both correctly, you will get extra 3
points.
1.
The two lines below represent the conduction and valence band of a p-type do
EE 332
Spring 2013
Quiz #5
Thursday, March 07, 2013
Name:
1.
NetID:
(a) Write the complete expression for current density in semiconductor. Include terms fro both
electrons and holes. (2 points)
(b) Which component(s) of the current density is/are depende
BB 332 Spring 2013
Problem #1: Carrier Concentration. (16 points) Both silicon and diamond are indirect
band-gap semiconductors, but diamond has a band—gap of 5.5 eV. Assuming that the effective
mass of the electrons and holes in diamond are identical to
EE 332
Spring 2013
Quiz #9
Tuesday, April 11, 2013
Name:
NetID:
Optoelectronic Devices
1. Sketch, relative to each other on the same graph, the I-V Characteristics for a p-n junction under a)
dark conditions, b) with illumination at intensity I1, and c) w
BB 332 Spring 2013
Quiz #4
Thursday, February 21, 2013
Name: v ‘ it ‘A NetID: - "t‘
H
1. The Ferml-Dlrac functlon 1s f ( E ) = (BE WT . On the energy dlagrarn of a semlconductor W1th
F
1+e
non—homogeneous (i.e. varying with position) doping shown below, w
nor p
-x p cm- 3
xn
in
-x p
-x p
EE 332
xn
1020
1020
xn
Spring 2013
1020
1018 1018
1018
1016 1016 Quiz
#6
Thursday, March 28, 2013
1016
1014 1014
Name:
NetID:
1014
1012 1012
1. Below are the steady state carrier concentrations for a p-n junction with a cr
EE 332
Spring 2013
Quiz #11
Thursday, April 25, 2013
Name:
NetID:
1. Bipolar Junction Transistor: p-n-p transistor is fabricated with the following conditions: The
doping concentration of the emitter is twenty times larger than that of the base. The mobil
EE 332
Spring 2013
Quiz #12
Thursday, April 30, 2013
Name:
NetID:
MOS Capacitor: Find the maximum depletion width, insulator capacitance Ci, the threshold voltage,
and the minimum capacitance Cmin for an idea MOS capacitor with a 10-nm gate oxide (SiO2) o
EE 332
Spring 2013
Quiz #10
Thursday, April 18, 2013
Name:
NetID:
Bipolar Junction Transistor
1. Sketch the energy band diagram for an n+-p-n transistor in equilibrium (all terminals grounded)
and also under normal active bias (emitter junction forward bi
BB 332 Spring 2013
Quiz #6
Thursday, March 14, 2013
Name: Mevx Lu. NetID:
Consider a P—N+ junction shown below _.§
pus-:le c Pr
N+
(a) Draw the energy band diagram at equilibrium and indicate schematically the position of E, EF, EC
and EU. (2 points)
1. The room temperature I-V characteristic of a silicon np junction under reverse
bias is shown below. The doping density for the P-side (NA) is 4 times that in
the N-side (NA = 4ND). Relevant data is given below:
Ln L p L 1 m ; Dn D p D 40
cm 2
; n i 101
ECE 340
Final - Review
Optoelectronics
Optoelectronic diodes
When a light-emitting diode (LED) is turned on (i.e. forward
biased), minority carriers are injected into the quasi-neutral
regions, where they subsequently recombine with majority
carriers. Bec
EE 332
Spring 2014
Quiz #5
Thursday, March 06, 2014
Name:
1.
NetID:
(a) Write the complete expression for current density in semiconductor. Include terms fro both
electrons and holes. (2 points)
(b) Which component(s) of the current density is/are depende
EE 332
Spring 2014
Quiz #7
Thursday, April 04, 2014
Name:
NetID:
1. In a p+-n junction, the n-doping Nd is doubled. How do the following changes if everything else
remains unchanged? Indicate only increase or decrease.
ECE 340
Homework Assignment #8
a) Bu
Ex. 3:
Ex. 1: Excess carrier distribution.
Ex. 2: Quasi-Fermi energy level
Ex. 6:3: P-N junction in equilibrium state
Ex.
Ex. 7:
Ex. 4:
Ex. 8: Forward-bias and reverse-bias of P-N junction
Comment The space charge width has increased from .951
EE 332
Spring 2014
Quiz #6
Thursday, March 25, 2013
Name:
NetID:
Consider a P-N+ junction shown below. The n-side of the junction is heavily doped.
P
N+
(a) Sketch the space charge density at both sides of the junction. Please label xp0 and xn0.
2
17
3
2. (a) A Ge bar 0.1 cm long and 100 m in cross-sectional area is doped with 1x10 /cm gallium. Find
the current at 300 K with 10 V applied.
EE 332
Spring 2013
(b) Upon a steady illumination uniform excess carriers are generated in the Ge bar. Assume
EE 332
Spring 2013
Homework Assignment #3
Due: Thursday, February 14, 2013
Print your name and NetID legibly. Follow the guideline and format given in the
syllabus. Put all units. Staple multiple pages.
1. Fermi-Dirac distribution function
(a) Calculate t
EE 332
Spring 2013
Homework Assignment #3
Due: Thursday, February 14, 2013
Print your name and NetID legibly. Follow the guideline and format given in the
syllabus. Put all units. Staple multiple pages.
1. Fermi-Dirac distribution function
(a) Calculate t
EE 332
Spring 2013
Homework Assignment #2
Due: Thursday, February 07, 2013
Print your name and NetID legibly. Follow the guideline and format given in the
syllabus. Put all units. Staple multiple pages.
1. Solids are made of nuclei and electrons. Much of
EE 332
Spring 2013
Homework Assignment #1
Due: Thursday, January 31, 2013
Print your name and NetID legibly. Follow the guideline and format given in the
syllabus. Put all units. Staple multiple pages.
1. A convenient unit of length for description of sol
EE 332
Spring 2013
Homework Assignment #4
Due: Friday, February 22, 2013
Print your name and NetID legibly. Follow the guideline and format given in the
syllabus. Put all units. Staple multiple pages.
1. Mobility and resistivity
(a) An average hole drift
EE 332
Spring 2013
Homework Assignment #6
Due: Friday, March 15, 2013
Print your name and NetID legibly. Follow the guideline and format given in the
syllabus. Put all units. Staple multiple pages.
1. An abrupt Si p-n junction is formed by alloying a unif