EE 332
Spring 2014
Quiz #1
Tuesday, January 28, 2014
Name:
NetID:
1. Draw an sc, a bcc, and an fcc crystal. How many atoms are found inside a unit cell of an sc, a bcc,
and an fcc crystal? How far apa
EE 332
Spring 2014
Quiz #2
Tuesday, February 04, 2014
Name:
NetID:
1. Please identify the type of bonding for the following materials:
Si
Steel
Ionic bonding
AgBr
SiC
GaAs
Sodium
Zinc
ZnS
Metallic
bon
EE 332 Spring 2013
Problem #1 (p-n junction fundamental): The ﬁgure below is dimensioned plot of the
steady state carrier concentrations inside a p-n step junction diode maintained at room
temperature
(b) Calculate the recombination coefficient r for part (a).
(c) Assume that this value of r applies when the GaAs sample is uniformly exposed to a steady22
EE 332
3
state optical generation rate gop =
EE 332 Semiconductor Materials and Devices
Lecture 1. Introduction
1. Why Semiconductor
2. Course outline
3. Review Syllabus
3) Why are we here?
Why Study Electronic Devices?
They are the backbone of
What happens in the junction?
P-N Junction
EE 332 Spring 2014
P-N Junction
N-type
P-type
Recombination
Depletion region
EE 332 Spring 2014
P-N Junction
Depletion region
Junction width: W, xp0, xn
Exam II
Exam #2
12:40 PM 2:00 PM April 10th 2014.
Three problems: Excessive carrier and PN
junction
Durham 171 (Last name A-L)
Hoover 1213 (Last name M-Z)
EE 332 Spring 2014
Forward-Based Junction
Exam 1
Average: 70
Standard deviation: 17
>85
85-70
70-55
55-40
<40
Excellent
Very good
Good
Fair
Poor
EE 332 Spring 2014
Example: a bad odor in a room.
Diffusion of Electrons and Holes
n semiconduc
EE 332
Spring 2013
Homework Assignment #6
Due: Friday, March 15, 2013
Print your name and NetID legibly. Follow the guideline and format given in the
syllabus. Put all units. Staple multiple pages.
1.
EE 332 Semiconductor Materials and Devices
Lecture 11. Diffusion of Carriers
1.
2.
Diffusion process
Diffusion and drift of carriers
Diffusion
Diffusion
Particles diffuse from regions of higher concen
EE 332 Semiconductor Materials and Devices
Lecture 1. Introduction
1. Why Semiconductor
2. Course outline
3. Review Syllabus
3) Why are we here?
Why Study Electronic Devices?
They are the backbone of
EE 332
Spring 2014
Homework Assignment #7
Due: Friday, April 05, 2014
Print your name and NetID legibly. Follow the guideline and format given in the
syllabus. Put all units. Staple multiple pages.
1.
EE 332
Spring 2014
Homework Assignment #6
Due: Friday, March 28, 2014
Print your name and NetID legibly. Follow the guideline and format given in the
syllabus. Put all units. Staple multiple pages.
1.
2
17
3
2. (a) A Ge bar 0.1 cm long and 100 m in cross-sectional area is doped with 1x10 /cm gallium. Find
the current at 300 K with 10 V applied.
EE 332
Spring 2014
(b) Upon a steady illumination unif
P-N Junction Characteristics
W, xp0, xn0,
(x)
E (x)
V(x)
Movement of electrons and hole
Depletion approximation
Depletion Region Approximat
qN A
qN D
0
for x
for x p x 0
for 0 x x n
x p and x
x
Photovoltaic Fundamentals
Photodiode I-V
Open circuit voltage
h > Eg
Eg
qV0
EF
p
n
Before illumination
qVoc
Fp
c Fundamentals
Photodiode I-V
F
p
n
n
After illumination
Max voltage obtainable = qV0 (li
EE 332
Spring 2013
Homework Assignment #4
Due: Friday, February 22, 2013
Print your name and NetID legibly. Follow the guideline and format given in the
syllabus. Put all units. Staple multiple pages.
EE 332
Spring 2013
Homework Assignment #1
Due: Thursday, January 31, 2013
Print your name and NetID legibly. Follow the guideline and format given in the
syllabus. Put all units. Staple multiple pages
EE 332
Spring 2013
Homework Assignment #2
Due: Thursday, February 07, 2013
Print your name and NetID legibly. Follow the guideline and format given in the
syllabus. Put all units. Staple multiple page
EE 332
Spring 2013
Homework Assignment #3
Due: Thursday, February 14, 2013
Print your name and NetID legibly. Follow the guideline and format given in the
syllabus. Put all units. Staple multiple page
EE 332
Spring 2013
Homework Assignment #3
Due: Thursday, February 14, 2013
Print your name and NetID legibly. Follow the guideline and format given in the
syllabus. Put all units. Staple multiple page
2
17
3
2. (a) A Ge bar 0.1 cm long and 100 m in cross-sectional area is doped with 1x10 /cm gallium. Find
the current at 300 K with 10 V applied.
EE 332
Spring 2013
(b) Upon a steady illumination unif
EE 332
Spring 2014
Quiz #6
Thursday, March 25, 2013
Name:
NetID:
Consider a P-N+ junction shown below. The n-side of the junction is heavily doped.
P
N+
(a) Sketch the space charge density a
EE 332
Spring 2014
Quiz #7
Thursday, April 04, 2014
Name:
NetID:
1. In a p+-n junction, the n-doping Nd is doubled. How do the following changes if everything else
remains unchanged? Indicate only inc
EE 332
Spring 2014
Quiz #5
Thursday, March 06, 2014
Name:
1.
NetID:
(a) Write the complete expression for current density in semiconductor. Include terms fro both
electrons and holes. (2 points)
(b) W
1. The room temperature I-V characteristic of a silicon np junction under reverse
bias is shown below. The doping density for the P-side (NA) is 4 times that in
the N-side (NA = 4ND). Relevant data is
EE 332
Spring 2014
Homework Assignment #7
Due: Friday, April 05, 2014
Print your name and NetID legibly. Follow the guideline and format given in the
syllabus. Put all units. Staple multiple pages.
1.
EE 332
Spring 2014
Homework Assignment #6
Due: Friday, March 28, 2014
Print your name and NetID legibly. Follow the guideline and format given in the
syllabus. Put all units. Staple multiple pages.
1.
EE 332 Notes
Quantum wells
We considered quantum wells this week. A quantum well confines carriers inside a well of small
(atomic) dimensions. This is important- it means that the energies get quantiz
EE 332 notes
Fermi function and carrier concentrations
1. Fermi function can be approximated by the Boltzmann approximation when (E-EF) is > kT (
in practice, about 2.5-3.0 kT). [ Check this pout for
EE 332 Hall effect problem
A sample of Si has the dimensions (1mm x 1mm) area, and 1 cm length. The current flows along
the length direction (+ x direction). The magnetic field is in the +y direction.