MOS ID-VD Relationship and Small Signal Response Objective: Understand the physics and models of semiconductor devices including . field-effect transistors. field effect transistors Questions to be answered: What are the basic small signal equivalen
Diffusion and Band Bending
Objective: Be able to calculate carrier concentrations and currents in semiconductor devices. devices Questions to be Answered:
How does diffusion describe carrier motion? How do we draw band diagrams in the presence of
Recombination and Generation
Objective: Be able to calculate carrier concentrations and currents in semiconductor devices. Questions to be Answered:
How are electrons and holes "created" and "destroyed?"
EE360 - Lecture 9
Recombination-Generatio
Minority Carrier Diffusion Equations
Objective: Be able to calculate carrier concentrations and currents in semiconductor devices. Questions to be Answered:
What are the critical equations governing semiconductor device behavior? How do we solve
Minority Carrier Diffusion Equations
Objective: Be able to calculate carrier concentrations and currents in semiconductor devices. Questions to be Answered:
What are the critical equations governing semiconductor device behavior? How do we solve
Minority Carrier Diffusion Equations and Semiconductor Device Fabrication Objectives:
Be able to calculate carrier concentrations and currents in semiconductor devices. Understand the fabrication technologies used to fabricate integrated circuits
pn Junction Electrostatics
Objective: Understand the physics and models of semiconductor devices including diodes.
Questions to be answered: When p-type and n-type materials are brought in contact, what happens to the carriers? How do we describe t
Announcements
First exam on 02/18/07
Covers material through 02/11/07 One page of notes (single sided, 8.5" x 11") Bring a calculator HW4 will not be turned in or graded, but is posted with solutions A old exam i posted as well An ld is t d ll
pn Junction Electrostatics: Summary
Band Diagram
Electric Field E=1/q (dEC/dx)
Emax
Potential V=-1/q(EC-EREF)
W=
Charge Density = (dE/dx)
2K S 0 N A + N D (Vbi - VA ) q N AND
Vbi =
kT N A N D ln q ni 2
Diagrams from Pierret.
EE
pn Junction Diodes: Non-idealities
Objective: Understand the physics and models of semiconductor devices including diodes. Questions to be answered:
What is breakdown and why does it happen? What happens when we have recombination and generation in
Simplifications of "one-sided" diodes:
IF one side of the diode is heavily doped (NA>ND or ND>NA) then we call the doping level on the lightly doped side NB (background doping) and we find p ( g p g)
Vbi = kT N A N D EG kT N B ln ln + q ni
Metal Semiconductor Contacts and Diodes
Objective: Understand the physics and models of semiconductor devices. Questions to be answered:
How do we describe an ideal metal-semiconductor contact electrostatically? How do we differentiate between a re
Metal-Oxide Semiconductor (MOS) Introduction
Objectives: Understand the physics and models of semiconductor devices including i l di . fi ld ff t transistors. field-effect t i t Questions to be answered:
What is a MOS structure and how is it formed
MOS CV Characteristics
Objective: Understand the physics and models of semiconductor devices including . field-effect transistors. t i t Questions to be answered: What is the capacitance for each biasing region? How does the capacitance very with f
Carrier Concentrations and Carrier Action Objective: Be able to calculate carrier concentrations and currents in semiconductor devices. Questions to be Answered:
Review: How does drift describe carrier motion? What do we mean by carrier "mobility
Carrier Concentrations and Carrier Action
Objective: Be able to calculate carrier concentrations and currents in semiconductor devices. Questions to be Answered:
Review and examples: How do we calculate carrier concentrations in practice? How and
Exam 2
March 30th (Friday) y Review in class on today Covers material through Monday (03/26/07) Not cumulative Old exam posted on website Two note sheets (single sided, 8.5" x 11" paper) Bring a calculator
EE360 Lecture 23
Review
pn-juncti
MOS Non-idealities
Objectives: To understand common non-idealities that affect MOS-based devices. Questions to be answered: How does the difference in work-function between the metal and semiconductor affect device characteristics? How do various c
Modern MOSFETs
Questions to be answered: Why do we want short channels in MOSFETs? What design criteria do we need to take into account for short channel MOSFETs?
EE360 Lecture 25
Maximizing Cutoff Frequency
fm
nVD 2L2
For the linear region
Bipolar-Junction Transistors: Introduction
Objective: To conceptually understand how BJTs function. Questions to be answered: What is a BJT and how do we make one? What are the modes of operation? How do we describe the electrostatics of a BJT? H
BJT Steady-State Response
Objective: To quantitatively describe the BJT's behavior in steady-state. Questions to be answered: How does a BJT function? (review) What parameters describe BJT performance? (q y) How do we determine (quantitatively) th
BJT Steady-State Response
Objective: To quantitatively describe the BJT's behavior in steady-state. Questions to be answered: How do we determine (quantitatively) the BJTs output characteristics?
EE360 Lecture 28
Ebers-Moll Model:
Large Signal Eq
BJT Non-idealities
Objectives: To understand BJT device models and non-idealities non-idealities. Questions to be answered: What factors lead to non-ideal BJT behavior?
EE360 Lecture 29
Non-idealities: Base-width Modulation
Depletion widths chan
BJT Dynamic Response
Objective: To understand how the BJT responds to signals that change with time. Questions to be answered: What is the hybrid-pi model for the small signal response? How can the BJT operate as a switch?
EE360 Lecture 30
Ebers
Welcome to EE 360: Introduction to Semiconductor Devices Material: Semiconductor Devices Instructor: Prof Todd Hastings Prof. Research Interests:
nanofabrication techniques, nanoscale electronics and photonics for communications and bio-chemical
Welcome to EE 360: Introduction to Semiconductor Devices Material: Semiconductor Devices Instructor: Prof Todd Hastings Prof. Research Interests:
nanofabrication techniques, nanoscale electronics and photonics for communications and bio-chemical
Semiconductor Models and Carriers
Objective: 1. Understand the electronic properties of semiconductor materials materials. Questions to be answered:
Why is the concept of quantization important for semiconductors?
What models do we use to represe
Carrier Modeling
Objective: 1. Understand the electronic properties of semiconductor materials. Questions to be answered:
What do we mean by carrier "effective mass"? How do we manipulate the number of carriers in a semiconductor using donors and
Carrier Distributions and Concentrations Objective: 1. Understand the electronic properties of semiconductor materials. Questions to be answered: How do we determine the energy distribution and concentration of carriers? What do we mean by the "Fe
Exam 2
March 28th (next Friday) Review in class on Wednesday Covers material through Monday (03/24/07) Not cumulative Two note sheets (single sided, 8.5" x 11" paper)
EE360 Lecture 21
MOSFETs: Basic Device Characteristics Objective: Understan