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From the following layout: Y=(A+B)*C, Let's say this device has transistor widths chosen to achieve effective rise and fall resistance equal to that...

From the following layout: Y=(A+B)*C,

Let's say this device has transistor widths chosen to achieve effective rise and fall resistance equal to that of a unit inverter (R). Calculate the diffusion capacitances lumped to ground. Assume n-type device has two times faster mobility than p-type device.

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