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the following reaction is used to deposit polysilicon by cvd process from sicl4. The concentration of sicl4 is 4.0x10^16 molecules/cm3 and gas...

the following reaction is used to deposit polysilicon by cvd process from sicl4. The concentration of sicl4 is 4.0x10^16 molecules/cm3 and gas transfer coefficient is 2.55cm/s. Estimate film deposition rate. Assume that the growth process is mass-transfer limited. Atomic density of polysilicon is 5.0x10^22 atoms/cm3

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