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a) Plot the channel formation of p-channel MOS-FET for linear and

saturation pinch-off regime . Explain how the channel changes with applied voltages. Show semiconductor structure, gate, drain, source and voltage polarities.
b) Explain what happens if you apply voltages like i.Vg <<0, Vd<<0, Vs=0; ii. Vg <<0, Vd >0,Vs=0, iii.
Vg >0, Vd <0, Vs=0 to ideal MOS-FET structure (g:gate, s:source, d:drain). Explain clearly by referring to MOSFET structure (here associate with the channel and show where you draw the current voltage graph in your drawings, show the current directions).
c) Plot the band diagram, approximate distributions of charge in the ideal MOS capacitor in depletion and
accumulation for the p-channel case.

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