consider Si pin phtodiode that has a p+ layer of thickness 0.75um, i-Si layer of width 10um. it is reverse biased 20v .
a) what is the speed of response due to the bulk absorption? what wavelengths would lead to this type of speed of response.
b) what is the speed of response due to the absorption surface? what wavelengths would lead to this type of speed of response.
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