This is part of a nanoelectronics course in college. I've been working on it for a week and have made little to no progress. Any help would be great!
An experiment is carried out at room temperature on n-type Si doped at Nd=10^17 cm^(-3). The conductivity is found to be 10Ωcm. Assuming that mobility of electrons is 1.1x10^3 cm^2/Vs, find the fractions of electrons ionized.
Find the diffusion length if it was found that the light induced excess conductivity decays according to the following exponential law:
δσ(t)=δσ(0)e^(-7*10^5 t), where t is given in seconds.