This is part of a nanoelectronics course in college. I've been working on it for a week and have made little to no progress. Any help would be great!

-----------------------

An experiment is carried out at room temperature on n-type Si doped at Nd=10^17 cm^(-3). The conductivity is found to be 10Ωcm. Assuming that mobility of electrons is 1.1x10^3 cm^2/Vs, find the fractions of electrons ionized.

Find the diffusion length if it was found that the light induced excess conductivity decays according to the following exponential law:

δσ(t)=δσ(0)e^(-7*10^5 t), where t is given in seconds.

-----------------------

An experiment is carried out at room temperature on n-type Si doped at Nd=10^17 cm^(-3). The conductivity is found to be 10Ωcm. Assuming that mobility of electrons is 1.1x10^3 cm^2/Vs, find the fractions of electrons ionized.

Find the diffusion length if it was found that the light induced excess conductivity decays according to the following exponential law:

δσ(t)=δσ(0)e^(-7*10^5 t), where t is given in seconds.

### Recently Asked Questions

- I have a case study need help. Can anyone help me complete the following question? Thanks. The course is BSBRSK501 managing risk, case study is about Biz Ops

- 1. Choose all probability distributions which are theoretically related to normal probability distribution 2. The 68-95-99.7 rule states that in a normal

- What is the frequency of the EX model? please help with this because I am not sure how to figure this problem out