A) Plot the Id versus Vds for Vgs = 0.5,1,1.5, 2 and 2.5 on a single graph for Vds =
0V to 2.5V for a minimum size (W = 0.45µm, L = 0.3µm) NMOS device. (5 points)
B) What is the maximum Id found in part (A)? Divide this by the channel width to
find the maximum transistor current density (2 points)
C) Plot the Id versus Vds for a minimum size PMOS device for the same conditions.
D) What is the maximum Id found in part(C)? Divide this by the channel width to find
the maximum transistor current density (2 points)
E) Short channel transistors display leakage current that increases a digital circuit’s
standby power consumption. Plot the drain leakage current by setting the gate of the
NMOS device to 0.0V and sweeping the temperature from 0C to 100C for Vds = 2.5V
for a 1µm device. What is the ratio of Ion to Ioff at 0C and at 100C? (6 points)
F) How does the PMOS leakage at 100C compare the NMOS leakage at 100C (Give a
ratio)? (5 points)
This question was asked on Jan 21, 2013 and answered on Jan 22, 2013.
Recently Asked Questions
- Please refer to the attachment to answer this question. This question was created from Homework1. Additional comments: "Can you help me with these questions?"
- Is social responsibility different from ethics ? Please provide a reference would like to read more about this topic
- Soccer Wholesale purchased land and a warehouse for $620,000. In addition to the purchase price, Soccer Wholesale makes the following expenditures related to