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Not sure which equations to use for calculations. A) Plot the Id versus Vds for Vgs = 0.5,1,1.5, 2 and 2.5 on a single graph for Vds = 0V to 2.5V for...

Not sure which equations to use for calculations.
A) Plot the Id versus Vds for Vgs = 0.5,1,1.5, 2 and 2.5 on a single graph for Vds =
0V to 2.5V for a minimum size (W = 0.45µm, L = 0.3µm) NMOS device. (5 points)
B) What is the maximum Id found in part (A)? Divide this by the channel width to
find the maximum transistor current density (2 points)
C) Plot the Id versus Vds for a minimum size PMOS device for the same conditions.
(5 points)
D) What is the maximum Id found in part(C)? Divide this by the channel width to find
the maximum transistor current density (2 points)
E) Short channel transistors display leakage current that increases a digital circuit’s
standby power consumption. Plot the drain leakage current by setting the gate of the
NMOS device to 0.0V and sweeping the temperature from 0C to 100C for Vds = 2.5V
for a 1µm device. What is the ratio of Ion to Ioff at 0C and at 100C? (6 points)
F) How does the PMOS leakage at 100C compare the NMOS leakage at 100C (Give a
ratio)? (5 points)

The way to approach this... View the full answer

Solution A) Plot the Id versus Vds for Vgs = 0.5,1,1.5, 2 and 2.5 on a single graph for Vds = 0V to 2.5V for a minimum size (W = 0.45m, L = 0.3m) NMOS device. (5 points) Solution: Drain current in...

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