A silicon p-n junction has a linearly graded junction on the p-side with a grading constant,

a=1019 cm-4, and a uniform doping of 3 x 1014 cm-3 on the n-side. Assume complete ionization.

The dielectric constant of silicon is 11.7. If the depletion layer width of the p-side is 0.8 m at

zero bias

a=1019 cm-4, and a uniform doping of 3 x 1014 cm-3 on the n-side. Assume complete ionization.

The dielectric constant of silicon is 11.7. If the depletion layer width of the p-side is 0.8 m at

zero bias

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